TPC6108

TPC6108 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅣ) TPC6108 Notebook PC Applications Portable Equipment Applications • • • • • Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 50 mΩ (typ.) High forward transfer admittance: |Yfs| = 7.4 S (typ.) Low leakage current: IDSS = −10 µA (max) (VDS = −30 V) Enhancement-model: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA) TENTATIVE Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse Drain power dissipation(t = 5 s) Drain power dissipation(t = 5 s) Single pulse avalanche energy Avalanche current Repetitive avalanche energy Single-device value at dual operation (Note 2a, 3b, 5) Channel temperature Storage temperature range (Note 1) (Note 1) (Note 2a) (Note 2b) (Note 4) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR EAR Tch Tstg Rating −30 −30 ±20 −4.5 −18 2.2 0.7 1.3 −2.25 0.22 150 −55~150 mJ A mJ Unit V V V A Drain Drain Gate Source Drain Drain JEDEC W ― ― 2-3T1A JEITA TOSHIBA Weight: 0.011 g (typ.) Circuit Configuration °C °C 6 5 4 Thermal Characteristics Characteristics Thermal resistance, channel to ambient(t = 5 s) (Note 2a) Thermal resistance, channel to ambient(t = 5 s) (Note 2b) Symbol Max Unit 1 Rth (ch-a) 56.8 °C/W 2 3 Rth (ch-a) 178.5 °C/W Note: For (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5), please refer to the next page. This transistor is an electrostatic sensitive device. Please handle with caution. 1 2004-10-28 TPC6108 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge1 Gate-drain (“miller”) charge tf toff Qg Qgs1 Qgd Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) RDS (ON) |Yfs| Ciss Crss Coss tr ton 4.7 Ω VGS 0 V −10 V ID = −2.2 A VOUT RL = 6.8 Ω VDS = −10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±16 V, VDS = 0 V VDS = −30 V, VGS = 0 V ID = −10 mA, VGS = 0 V ID = −10 mA, VGS = 20 V VDS = −10 V, ID = − 1 mA VGS = −4.5 V, ID = −2.2 A VGS = −10 V, ID = −2.2 A VDS = −10 V, ID = −2.2 A TENTATIVE Min   −30 −15 −0.8   3.7           Typ.      75 50 7.4 570 75 85 3.5 12 21 70 13 1.8 2.5 Max ±10 −10   −2.0 100 60       ns      nC pF Unit µA µA V V mΩ S VDD ∼ −15 V − Duty < 1%, tw = 10 µs = VDD ∼ −24 V, VGS = −10 V, − ID = −4.5 A Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol IDRP VDSF Test Condition  IDR = −4.5 A, VGS = 0 V Min   Typ.   Max −18 1.2 Unit A V 2 2004-10-28 TPC6108 Marking (Note 5) Lot code (month) Lot No. (weekly code) TENTATIVE S3H Product-specific code Lot code (year) A line indicates lead (Pb)-free package or lead (Pb)-free finish. Part No. (or abbreviation code) Pin #1 Note 1: Ensure that the channel temperature does not exceed 150℃. Note 2: (a) Device mounted on a glass-epoxy board (a) (t = 5 s) (b) Device mounted on a glass-epoxy board (b) (t = 5 s) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (a) (b) Note 3: VDD = −24 V,Tch = 25°C (initial),L = 0.2 mH,RG = 25 Ω,IAR = -2.25 A Note 4: Repetitive rating: pulse width limited by max channel temperature Note 5: ● on lower left of the marking indicates Pin 1. 3 2004-10-28 TPC6108 TENTATIVE RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 030619EAA • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 4 2004-10-28