TPC6108
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOSⅣ)
TPC6108
Notebook PC Applications Portable Equipment Applications
• • • • • Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 50 mΩ (typ.) High forward transfer admittance: |Yfs| = 7.4 S (typ.) Low leakage current: IDSS = −10 μA (max) (VDS = −30 V) Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA) Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) (Note 2a) (Note 2b) (Note 3) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR EAR Tch Tstg Rating −30 −30 ±20 −4.5 −18 2.2 0.7 1.3 −2.25 0.22 150 −55 to 150 Unit V V V A Drain Drain Gate Source Drain Drain
Drain power dissipation (t = 5 s) Drain power dissipation (t = 5 s) Single-pulse avalanche energy Avalanche current
W mJ A mJ °C °C
JEDEC JEITA TOSHIBA
― ― 2-3T1A
Repetitive avalanche energy Single-device value at dual operation (Note 4) Channel temperature Storage temperature range
Weight: 0.011 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics Thermal resistance, channel to ambient (t = 5 s) (Note 2a) Thermal resistance, channel to ambient (t = 5 s) (Note 2b) Symbol Rth (ch-a) Rth (ch-a) Max 56.8 178.5 Unit °C/W °C/W
Circuit Configuration
6 5 4
Note: For Notes 1 to 5, see page 3. Caution: This transistor is an electrostatic-sensitive device. Handle with care.
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TPC6108
Electrical Characteristics (Ta = 25°C)
Characteristic Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON-resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge1 Gate-drain (“Miller”) charge tf toff Qg Qgs1 Qgd Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) RDS (ON) |Yfs| Ciss Crss Coss tr ton VGS 0V −10 V 4.7 Ω ID = −2.2 A VOUT RL = 6.8 Ω VDS = −10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±16 V, VDS = 0 V VDS = −30 V, VGS = 0 V ID = −10 mA, VGS = 0 V ID = −10 mA, VGS = 20 V VDS = −10 V, ID = − 1 mA VGS = −4.5 V, ID = −2.2 A VGS = −10 V, ID = −2.2 A VDS = −10 V, ID = −2.2 A Min ⎯ ⎯ −30 −15 −0.8 ⎯ ⎯ 3.7 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ VDD ≈ −24 V, VGS ≈ −10 V, ID = −4.5 A ⎯ ⎯ Typ. ⎯ ⎯ ⎯ ⎯ ⎯ 75 50 7.4 570 75 85 3.5 12 21 70 13 1.8 2.5 Max ±10 −10 ⎯ ⎯ −2.0 100 60 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ns ⎯ ⎯ ⎯ ⎯ ⎯ nC pF Unit μA μA V V mΩ S
VDD ≈ −15 V Duty ≤ 1%, tw = 10 μs
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristic Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol IDRP VDSF Test Condition ⎯ IDR = −4.5 A, VGS = 0 V Min ⎯ ⎯ Typ. ⎯ ⎯ Max −18 1.2 Unit A V
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Marking (Note 5)
Lot code (month) Lot No. (weekly code)
Part No. (or abbreviation code)
S3H
Product-specific code Lot code (year) A line indicates Lead (Pb)-Free package
Pin #1
Note 1: Ensure that the channel temperature does not exceed 150℃. Note 2: (a) Device mounted on a glass-epoxy board (a) (t = 5 s) (b) Device mounted on a glass-epoxy board (b) (t = 5 s)
FR-4 25.4 × 25.4 × 0.8 (Unit: mm)
FR-4 25.4 × 25.4 × 0.8 (Unit: mm)
(a)
(b)
Note 3: VDD = −24 V, Tch = 25°C (initial), L = 0.2 mH, RG = 25 Ω, IAR = -2.25 A Note 4: Repetitive rating: pulse width limited by max channel temperature Note 5: ● to the lower left of the Part No. marking indicates Pin 1.
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TPC6108
ID – VDS
−5 −10 −4 −4.5 −4 −3.5 Common source Ta = 25°C Pulse Test −2.8 −10 −10 −3.5 −4 −8
ID – VDS
Common source Ta = 25°C Pulse Test −3
(A)
−3 −3
ID
ID
(A)
−4.5
Drain current
−2 −2.4 −1 VGS = −2.2V 0 0 −0.2 −0.4 −0.6 −0.8 −1.0
Drain current
−2.6
−6
−2.8
−4
−2.6
−2
−2.4 VGS = −2.2V
0 0
−1
−2
−3
−4
−5
Drain-source voltage
VDS
(V)
Drain-source voltage
VDS
(V)
ID – VGS
−15 Common source VDS = −10 V Pulse Test Ta = −55°C 100 −1.0
VDS – VGS
Common source Ta = 25°C Pulse Test
(V) VDS Drain-source voltage
25
−0.8
ID (A)
−10
−0.6 ID = −4.5 A −0.4 −2.2 −0.2 −1.1 0
Drain current
−5
0 0 −1 −2 −3 −4 −5
0
−2
−4
−6
−8
−10
Gate-source voltage
VGS
(V)
Gate-source voltage
VGS
(V)
|Yfs| – ID
100 Common source VDS = −10 V Pulse Test Ta = −55°C 10 100 25 1 1000
RDS (ON) – ID
Forward transfer admittance ⎪Yfs⎪ (S)
Drain-source ON resistance RDS (ON) (mΩ)
100
VGS = −4.5 V −10
Common source Ta = 25°C Pulse Test 10 −0.1 −1 −10 −100
0.1 −0. 1
−1
−10
−100
Drain current ID (A)
Drain current ID (A)
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TPC6108
RDS (ON) − Ta
150 Common source Pulse Test −100 Common source Ta = 25°C Pulse Test −5
IDR − VDS
Drain reverse current IDR (A)
Drain-source ON-resistance RDS (ON) ( μΩ)
ID = −1.1/−2.2/−4.5 A 100 VGS = −4.5 V
−10
−10
−3
50 ID = −1.1/−2.2/−4.5 A VGS = −10 V 0 −80
−1
−1 −40 0 40 80 120 160 −0.1 0 0.2 0.4 0.6
VGS = 0 V 0.8 1.0 1.2
Ambient temperature Ta (°C)
Drain-source voltage
VDS
(V)
Capacitance – VDS
10000 Common source VGS = 0 V f = 1 MHz Ta = 25°C −2.0
Vth − Ta
(pF)
1000
Capacitance C
Ciss
Gate threshold voltage Vth (V)
−1.6
−1.2
100
Coss
−0.8 Common source VGS = −10 V ID = −1 mA Pulse Test −40 0 40 80 120 160
Crss
−0.4
10 −0.1
−1
−10
−100
0 −80
Drain-source voltage
VDS (V)
Ambient temperature Ta (°C)
PD − Ta
2.5 (1) t = 5s −40
(1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b)
Dynamic input / output characteristics
−16
Drain power dissipation PD (W)
VDS
2.0
−30 VDS −20 −6 V VDD = −24 V −12 V
−12
1.5 (1) DC 1.0 (2) t = 5s 0.5
Drain-source voltage
−8
−10 VGS
(2) DC
0
0
40
80
120
160
0
Common source ID = −4.5 A Ta = 25°C Pulse Test 12 16 20
−4
0
4
8
0
Ambient temperature Ta (°C)
Total gate charge Qg (nC)
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Gate-source voltage
VGS (V)
(V)
TPC6108
rth − tw
1000
Device mounted on a glass-epoxy board (b) (Note 2b)
Transient thermal impedance rth (°C/W)
100
Device mounted on a glass-epoxy
10
board (a) (Note 2a)
1
SINGLE PULSE 0.1 1m 10m 100m 1 10 100 1000
Pulse width
tw (S)
Safe Operating Area
−100
ID max (pulse) *
(A)
−10
1 ms *
Drain current ID
10 ms *
−1
※
Single pulse Ta=25℃ VDSS max −10 −100
Curves must be derated linearly with increase in temperature. −0.1 −0.1 −1
Drain-source voltage
VDS
(V)
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TPC6108
RESTRICTIONS ON PRODUCT USE
• The information contained herein is subject to change without notice.
20070701-EN GENERAL
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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