TPC6603

TPC6603 TOSHIBA Transistor Silicon PNP Epitaxial Type TPC6603 Switching Applications DC/DC Converter Applications Strobe Flash Applications • • • High DC current gain: hFE = 200 to 500 (IC = −0.5 A) Low collector-emitter saturation: VCE (sat) = −0.19 V (max) High-speed switching: tf = 40 ns (typ.) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range DC t = 10 s DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC (Note 1) Tj Tstg Rating −30 −20 −7 −3.0 −5.0 −0.3 0.8 1.6 150 −55 to 150 Unit V V V A mA W °C °C 1. Collector 2. Collector 3. Base 4. Emitter 5. Collector 6. Collector JEDEC JEITA TOSHIBA ― ― 2-3T1A Weight: 0.01 g (typ.) Note 1: Mounted on an FR4 board (glass-epoxy; 1.6 mm thick; Cu area, 645 mm2) Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-13 TPC6603 Electrical Characteristics (Ta = 25°C) Characteristic Collector cutoff current Emitter cutoff current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Collector output capacitance Rise time Switching time Storage time Fall time Symbol ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) Cob tr tstg tf Test Condition VCB = −30 V, IE = 0 VEB = −7 V, IC = 0 IC = −10 mA, IB = 0 VCE = −2 V, IC = −0.5 A VCE = −2 V, IC = −1.6 A IC = −1.6 A, IB = −53 mA IC = −1.6 A, IB = −53 mA VCB = −10 V, IE = 0, f = 1 MHz See Figure 1 circuit diagram VCC ∼ −12 V, RL = 7.5 Ω − IB1 = −IB2 = −53.3 mA Min ⎯ ⎯ −20 200 100 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Typ. ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 28 70 150 40 Max −100 −100 ⎯ 500 ⎯ −0.19 −1.10 ⎯ ⎯ ⎯ ⎯ ns V V pF Unit nA nA V VCC 20 μs IB2 IB1 IB2 Duty cycle < 1% IB1 RL Output Input Figure 1. Switching Time Test Circuit Circuit configuration (Top View) 6 5 4 Part No. (or abbreviation code) Marking Lot code (month) Lot No. H3E Product-specific code Lot code (year) A line indicates lead (Pb)-free package or lead (Pb)-free finish. Pin #1 1 2 3 2 2006-11-13 TPC6603 IC – VCE −6 −100 −80 10000 Common emitter VCE = −2 V hFE – IC (A) −5 −60 1000 Single nonrepetitive pulse −40 IC −4 hFE Ta = 100°C 25 Collector current −3 DC current gain −20 −10 IB = −5 mA 100 −55 −2 −1 Common emitter Ta = 25°C Single nonrepetitive pulse −0.4 −0.8 −1.2 −1.6 −2.0 −2.4 10 0 0 Collector−emitter voltage VCE (V) 1 −0.001 −0.01 −0.1 −1 −10 Collector current IC (A) VCE (sat) – IC −10 Common emitter −100 Common emitter IC/IB = 30 Single nonrepetitive pulse −1 IC/IB = 30 VBE (sat) – IC Collector−emitter saturation voltage VCE (sat) (V) Base−emitter saturation voltage VBE (sat) (V) Single nonrepetitive pulse −10 −0.1 Ta = 100°C −1 −55 Ta = 100°C 25 −0.01 25 −55 −0.1 −0.001 −0.001 −0.01 −0.1 −1 −10 −0.01 −0.001 −0.01 −0.1 −1 −10 Collector current IC (A) Collector current IC (A) IC – VBE −5 Common emitter (A) −4 VCE = −2 V Single nonrepetitive pulse IC Collector current −3 −2 Ta = 100°C 25 −55 −1 0 0 −0.4 −0.8 −1.2 −1.6 Base−emitter voltage VBE (V) 3 2006-11-13 TPC6603 rth – tw 1000 Transient thermal resistance rth (j-a) (°C/W) 100 10 Curves apply only to limited areas of thermal resistance. Single nonrepetitive pulse Ta = 25°C Mounted on an FR4 board (glass-epoxy; 1.6 mm thick; Cu area, 645 mm2) 1 0.001 0.01 0.1 1 10 100 1000 Pulse width tw (s) Safe operating area −10 IC max (pulse) * 10 ms* 1 ms* 100 μs* 10 μs* IC max (continuous) (A) IC −1 1 0 s* 100 ms* DC operation (Ta = 25°C） Collector current *: Single nonrepetitive pulse Ta = 25°C Note that the curves for 100 ms, −0.1 10 s and DC operation will be different when the devices are not mounted on an FR4 board (glass-epoxy; 1.6 mm thick; Cu 2 area, 645 mm ). These characteristic curves must be derated linearly with increase in temperature. −0.01 −0.1 −1 −10 VCEO max −100 Collector−emitter voltage VCE (V) 4 2006-11-13 TPC6603 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2006-11-13