TPC6D03

TPC6D03 TOSHIBA Multi-Chip Device Silicon PNP Epitaxial Type, Schottky Barrier Diode TPC6D03 High-Speed Switching Applications DC-DC Converter Applications • A PNP transistor and a Schottky barrier diode are mounted on a compact and slim package. Unit: mm Maximum Ratings Transistor (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-collector voltage Emitter-base voltage Collector current Base current Collector power dissipation (Q1 single-device operation) Junction temperature DC Pulse Symbol VCBO VCEO VECO VEBO IC ICP IB PC (Note 1) Tj Rating −20 −20 −9.5 −9.5 −1.2 −2.0 −120 400 150 Unit V V V V A A mA mW °C JEDEC ― ― 2-3T1F Diode (Ta = 25°C) Characteristics Repetitive peak reverse voltage Average forward current Peak one cycle surge forward current (sine wave) Power dissipation (D1 single-device operation) Junction temperature Symbol VRRM IF (AV) IFSM PD (Note 1) Tj Rating 30 0.7 7.0 320 125 Unit V A A mW °C JEITA TOSHIBA Weight: 0.011 g (typ.) Maximum Ratings for Transistor and Diode (Ta = 25°C) Characteristics Total power dissipation (simultaneous operation) Storage temperature range Symbol PT (Note 2) Tstg Rating 600 −55~150 Unit mW °C Thermal Resistance Characteristics (for transistor and diode) Characteristics Thermal resistance, junction to ambient (single-device operation) Symbol Rth (j-a) (Note 1) Max 312 Unit °C/W Note 1: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, 2 Cu area: 645 mm ) 2 Note 2: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm ) Total power dissipation value when two devices are operated at the same time 1 2004-09-02 TPC6D03 Electrical Characteristics (Ta = 25°C) Transistor Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Rise time Switching time Storage time Fall time Symbol ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) tr tstg tf Test Condition VCB = −20 V, IE = 0 VEB = −9.5 V, IC = 0 IC = −10 mA, IB = 0 VCE = −2 V, IC = −0.15 A VCE = −2 V, IC = −0.5 A IC = −0.5 A, IB = −16.7 mA IC = −0.5 A, IB = −16.7 mA See Figure 1 circuit diagram. VCC ∼ −12 V, RL = 24 Ω − IB1 = −IB2 = −16.7 mA VCC 20 µs IB2 IB1 IB2 Duty cycle < 1% IB1 RL Output Min ⎯ ⎯ −20 140 85 ⎯ ⎯ ⎯ ⎯ ⎯ Typ. ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 40 135 37 Max −100 −100 ⎯ 350 ⎯ −0.17 −1.10 ⎯ ⎯ ⎯ ns V V Unit nA nA V Input Figure 1 Switching Time Test Circuit & Timing Chart Circuit Configuration 6 Q1 5 4 D1 Marking Lot code (month) Lot No. Part No. (or abbreviation code) H8C Product-specific code Lot code (year) A line indicates lead (Pb)-free package or lead (Pb)-free finish. 1 2 3 Pin #1 Diode Characteristics Peak forward voltage Peak forward voltage Repetitive peak reverse voltage Repetitive peak reverse current Junction capacitance Symbol VFM (1) VFM (2) VRRM IRRM Cj IF = 0.5 A IF = 0.7 A IR = 3 mA VR = 10 V VR = 10 V, f = 1 MHz Test Condition Min ⎯ ⎯ 30 ⎯ ⎯ Typ. 0.35 0.38 40 25 19 Max 0.4 0.43 ⎯ 100 ⎯ Unit V V V µA pF Handling Precaution Schottky barrier diodes have large-reverse-current-leakage characteristic compared to other rectifier products. This current leakage and not proper operating temperature or voltage may cause thermal runaway. Please take forward and reverse loss into consideration during design. 2 2004-09-02 TPC6D03 Transistor IC – VCE −1.6 Common emitter Ta = 25°C Single nonrepetitive pulse 1000 −30 −20 −15 25 Ta = 100°C hFE – IC IC (A) hFE −1.2 −10 −8 −0.8 −6 −4 −0.4 IB = −2 mA 100 −55 Collector current DC current gain 10 Common emitter VCE = −2 V 0 0 0 −0.1 −0.2 −0.3 −0.4 −0.5 −0.6 −0.7 Single nonrepetitive pulse 1 −0.001 −0.01 −0.1 −1 −10 Collector-emitter voltage VCE (V) Collector current IC (A) VCE (sat) – IC −1 −10 IC/IB = 30 Single nonrepetitive pulse −0.1 VBE (sat) – IC Common emitter IC/IB = 30 Single nonrepetitive pulse Collector-emitter saturation voltage VCE (sat) (V) 25 Base-emitter saturation voltage VBE (sat) (V) Common emitter 25 −1 −55 Ta = 100°C Ta = 100°C −0.01 −55 −0.001 −0.001 −0.01 −0.1 −1 −10 −0.1 −0.001 −0.01 −0.1 −1 −10 Collector current IC (A) Collector current IC (A) Safe Operating Area IC – VBE −1.5 Common emitter VCE = −2 V Single nonrepetitive pulse −10 *: Single nonrepetitive pulse Ta = 25°C Q1 single-device operation. When the device is mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2) IC max (pulsed) * 10 ms* 1 ms * 100 µs* IC max (continuous) −1 100 ms* IC (A) −1.2 −0.9 Collector current IC (A) Collector current 10 s * DC operation (Ta = 25°C) −0.1 Note that the curves for 100 ms, 10 s and DC operation will be different when the devices aren’t mounted on an FR4 board (glass epoxy, 1.62mm thick, Cu area: 645 mm ). These characteristic curves must be derated linearly with increase in temperature. −0.01 −0.1 −1 −0.6 Ta = 100°C 25 −55 −0.3 0 0 −0.3 −0.6 −0.9 −1.2 −1.5 −10 VCEO max −100 Base-emitter voltage VBE (V) Collector-emitter voltage VCE (V) 3 2004-09-02 TPC6D03 Diode IF – VF 10 0.5 DC PF (AV) – IF (AV) (A) Average forward power dissipation PF (AV) (W) IF 0.4 120 0.3 60 α = 30° 0.2 90 1 180 Instantaneous forward current 0.1 125 Ta = 25°C Rectangular waveform 0.01 0.1 0° α 360° Conduction angle α 0 0 0.001 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.2 0.4 0.6 0.8 1.0 1.2 Instantaneous forward voltage VF (V) Average forward current IF (AV) (A) Ta max – IF (AV) 140 120 100 80 60 40 20 0 0 180 α = 120° DC 0° α 360° IF (AV) Conduction angle α VR = 15 V Rectangular waveform 100 Cj – VR (typical) f = 1 MHz Ta = 25°C Maximum allowable temperature Ta max (°C) Junction capacitance 1.4 Cj 10 1 1 0.2 0.4 0.6 0.8 1.0 1.2 Average forward current IF (AV) (A) (pF) 10 100 Reverse voltage VR (V) 4 2004-09-02 TPC6D03 Diode Surge forward current (non-repetitive) 8 f = 50 Hz Ta = 25°C 100 Pulse measurement (one cell) 20 15 5 1 10 IR – Tj 30 (typical) (A) Surge forward current IFSM 6 IR (mA) Reverse current 10 4 2 0.1 VR = 3 V 0 1 10 100 0.01 0 50 100 150 Number of cycles Junction temperature Tj (°C) PR (AV) – VR 1.2 Rectangular waveform 0° VR 0.8 360° (typical) Average reverse power dissipation PR (AV) (W) 1.0 DC 300 α 240 180 0.6 Conduction angle α Tj = 125°C 0.4 120 0.2 0 0 α = 60° 10 20 30 Reverse voltage VR (V) 5 2004-09-02 TPC6D03 Transistor and Diode rth (j-a) – tw 1000 Transient thermal resistance rth (j-a) (°C/W) 100 10 Curves should be applied in thermal limited area. Single nonrepetitive pulse Ta = 25°C Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2) Either at Q1 or D1 single-operation 1 0.001 0.01 0.1 1 10 100 1000 Pulse width tw (s) Permissible Power Dissipation for Simultaneous Operation 0.5 Permissible power dissipation for Q1 PC (W) 0.4 (0.25, 0.35) 0.3 0.2 DC operation Ta = 25°C Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2) 0.1 0.2 0.3 0.4 0.5 0.1 0 0 Permissible power dissipation for D1 PD (W) 6 2004-09-02 TPC6D03 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 030619EAA • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 7 2004-09-02