TPC8022-H
TOSHIBA Field Effect Transistor
Silicon N-Channel MOS Type (Ultra-High-Speed U−MOS III)
TPC8022-H
High-Efficiency DC/DC Converter Applications
Notebook PC Applications
Portable-Equipment Applications
CCFL Inverter Applications
Unit: mm
z Small footprint due to a small and thin package
z High speed switching
z Small gate charge : QSW = 3.5 nC (typ.)
z Low drain−source ON-resistance: RDS (ON) = 22 mΩ (typ.)
z High forward transfer admittance: |Yfs| = 15 S (typ.)
z Low leakage current: IDSS = 10 μA (max) (VDS = 40 V)
z Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
VDSS
40
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
40
V
Gate-source voltage
VGSS
±20
V
DC
(Note 1)
ID
7.5
Pulse
(Note 1)
IDP
30
Drain power dissipation
(t = 10 s)
(Note 2a)
PD
1.9
W
Drain power dissipation
(t = 10 s)
(Note 2b)
PD
1.0
W
Single-pulse avalanche energy
(Note 3)
EAS
26
mJ
Avalanche current
IAR
7.5
A
Repetitive avalanche energy
Single-device value at dual operation
(Note 2a, 4)
EAR
0.08
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Drain current
A
JEDEC
―
JEITA
―
TOSHIBA
2-6J1B
Weight: 0.085 g (typ.)
Circuit Configuration
8
7
6
5
1
2
3
4
Note: For Notes 1 to 4, refer to the next page.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
1
2006-11-17
TPC8022-H
Thermal Characteristics
Characteristic
Symbol
Max
Thermal resistance, channel to ambient (t = 10 s)
(Note 2a)
Rth (ch-a)
65.8
Thermal resistance, channel to ambient (t = 10 s)
(Note 2b)
Rth (ch-a)
125
Unit
°C/W
Marking (Note 5)
TPC8022
H
Part No. (or abbreviation code)
Lot No.
(weekly code)
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Note 1: The channel temperature should not exceed 150°C during use.
Note 2:
a)
Device mounted on a glass-epoxy board (a)
b)
Device mounted on a glass-epoxy board (b)
FR-4
25.4 × 25.4 × 0.8
(Unit : mm)
FR-4
25.4 × 25.4 × 0.8
(Unit : mm)
(a)
(b)
Note 3: VDD = 24 V, Tch = 25°C (initial), L = 0.5 mH, RG = 25 Ω, IAR = 7.5 A
Note 4: Repetitive rating: pulse width limited by maximum channel temperature
Note 5: • on the lower left of the marking indicates Pin 1.
* Weekly code: (Three digits)
Week of manufacture
(01 for first week of year, continuing up to 52 or 53)
Year of manufacture
(The last digit of the calendar year)
2
2006-11-17
TPC8022-H
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
—
―
±10
μA
Drain cutoff current
IDSS
VDS = 40 V, VGS = 0 V
―
―
10
μA
V (BR) DSS
ID = 10 mA, VGS = 0 V
40
―
―
V (BR) DSX
ID = 10 mA, VGS = −20 V
25
⎯
⎯
Vth
VDS = 10 V, ID = 1 mA
1.1
―
2.3
RDS (ON)
VGS = 4.5 V, ID = 3.8 A
⎯
27
35
RDS (ON)
VGS = 10 V, ID = 3.8 A
―
22
27
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 3.8 A
7.5
15
―
Input capacitance
Ciss
―
650
―
―
55
―
―
240
―
―
3
―
―
9
―
Drain−source breakdown voltage
Gate threshold voltage
Drain−source ON-resistance
Reverse transfer capacitance
Crss
Output capacitance
Coss
Rise time
VDS = 10 V, VGS = 0 V, f = 1 MHz
tr
ID = 3.8 A
VOUT
10 V
Turn−on time
ton
0V
Fall time
4.7 Ω
Switching time
tf
Turn−off time
toff
Total gate charge (gate−source
plus gate−drain)
Qg
Gate−source charge
Qgs1
Gate−drain (“Miller”) charge
Qgd
Gate switching charge
Qsw
RL = 5.3 Ω
VGS
2
―
―
18
―
VDD ≈ 32 V, VGS = 10 V, ID = 7.5 A
―
11
―
VDD ≈ 32 V, VGS = 5 V, ID = 7.5 A
―
6.2
―
―
2.1
―
―
2.7
―
―
3.5
―
Duty <
= 1%, tw = 10 μs
VDD ≈ 32 V, VGS = 10 V, ID = 7.5 A
V
mΩ
S
pF
ns
―
VDD ∼
− 20 V
V
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristic
Drain reverse
current
Pulse (Note 1)
Forward voltage (diode)
Symbol
Test Condition
Min
Typ.
Max
Unit
IDRP
—
—
—
30
A
VDSF
IDR = 7.5 A, VGS = 0 V
—
—
−1.2
V
3
2006-11-17
TPC8022-H
ID – VDS
10
3.8
3.4
4.5
3.1
4
ID
6
10
4
3.8
3
4
2.9
2.8
2
16
Common source
Ta = 25°C
Pulse test
3.6
6
3.2
5
8
Drain current
Drain current
ID
(A)
6
ID – VDS
20
Common source
Ta = 25°C Pulse test
(A)
10
5
3.4
4.5
12
3.2
8
3
2.8
4
2.7
VGS = 2.6 V
VGS = 2.6 V
0
0
0.2
0.4
0.6
Drain-source voltage
0.8
VDS
0
0
1.0
(V)
0.4
0.8
Drain-source voltage
ID – VGS
Common source
VDS = 10 V
Pulse test
25
Ta = −55°C
100
5
1
2
3
4
Gate-source voltage
5
VGS
0.3
0.2
(V)
2
4
6
8
Gate-source voltage
10
VGS
12
(V)
RDS (ON) – ID
100
Common source
VDS = 10 V
Pulse test
Ta = −55°C
Drain-source ON-resistance
RDS (ON) (mΩ)
(S)
|Yfs|
Forward transfer admittance
3.8
1.9
0
0
6
ID = 7.5 A
0.1
|Yfs| – ID
100
25
1
0.1
0.1
Common source
Ta = 25°C
Pulse test
VDS
Drain-source voltage
ID
Drain current
10
10
(V)
0.4
15
100
2.0
VDS – VGS
20
0
0
VDS
0.5
(A)
25
1.6
(V)
30
1.2
1
Drain current
10
ID
4.5
VGS = 10 V
10
Common source
Ta = 25°C
Pulse test
1
0.1
100
(A)
1
Drain current
4
10
ID
100
(A)
2006-11-17
TPC8022-H
RDS (ON) – Ta
IDR – VDS
100
50
Common source
Ta = 25°C
Pulse test
(A)
Pulse test
3.8
ID = 7.5 A
1.9
IDR
40
Drain reverse current
Drain-source ON-resistance
RDS (ON) (mΩ)
Common source
30
VGS = 4.5 V
ID = 7.5 A, 3.8 A, 1.9 A
20
10 V
10
10
−40
0
40
Ambient temperature
80
120
1
Ta
0.1
0
160
3
10
VGS = 0 V
1
0
−80
4.5
−0.2
−0.4
−0.6
−0.8
Drain-source voltage
(°C)
Capacitance – VDS
−1.0
VDS
(V)
80
120
−1.2
Vth – Ta
10000
2.5
Vth (V)
Common source
Ta = 25°C
VGS = 0 V
Ciss
Coss
100
Crss
1
10
Drain-source voltage
1.0
Common source
0.5
VDS = 10 V
ID = 1 mA
Pulse test
0
−80
100
VDS
1.5
−40
(V)
t = 10 s
Drain-source voltage
1.2
(2)
0.8
0.4
0
0
50
100
Ambient temperature
(°C)
150
Ta
(°C)
16
VDS
30
12
16
20
4
VGS
4
8
Total gate charge
5
8
VDD = 32 V
8
10
0
0
200
20
Common source
ID = 7.5 A
Ta = 25°C
Pulse test
VGS
(V)
40
VDS
(W)
PD
Drain power dissipation
50
(2) Device mounted on a glass-epoxy
board (b) (Note 2b)
1.6
Ta
160
Dynamic input/output
characteristics
(1) Device mounted on a glass-epoxy
board (a) (Note 2a)
(1)
40
Ambient temperature
PD – Ta
2.0
0
(V)
10
0.1
2.0
12
Qg
16
Gate-source voltage
Capacitance
Gate threshold voltage
1000
C
(pF)
f = 1 MHz
0
20
(nC)
2006-11-17
TPC8022-H
rth − tw
1000
Transient thermal impedance
rth (°C/W)
(1) Device mounted on a glass-epoxy board (a) (Note 2a)
(2)
(2) Device mounted on a glass-epoxy board (b) (Note 2b)
(1)
100
10
1
Single - pulse
0.1
0.001
0.01
0.1
1
Pulse width
10
tw
100
1000
(s)
Safe operating area
100
t =1 ms*
10
Drain current
ID
(A)
ID max (Pulse)*
10 ms*
1
* Single-pulse
Ta = 25°C
Curves must be derated
linearly with increase in
temperature.
0.1
0.1
1
Drain-source voltage
VDSSmax
10
VDS
100
(V)
6
2006-11-17
TPC8022-H
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
7
2006-11-17
