TPC8022-H

TPC8022-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U−MOS III) TPC8022-H High-Efficiency DC/DC Converter Applications Notebook PC Applications Portable-Equipment Applications CCFL Inverter Applications Small footprint due to a small and thin package High speed switching Small gate charge : QSW = 3.5 nC (typ.) Low drain−source ON-resistance: RDS (ON) = 22 mΩ (typ.) High forward transfer admittance: |Yfs| = 15 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) (Note 2a) (Note 2b) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR EAR Tch Tstg Rating 40 40 ±20 7.5 30 1.9 1.0 26 7.5 0.08 150 −55 to 150 Unit V V V A W W mJ A mJ °C °C 1 2 3 4 JEDEC JEITA TOSHIBA ― ― 2-6J1B Weight: 0.085 g (typ.) Drain power dissipation (t = 10 s) Drain power dissipation (t = 10 s) Circuit Configuration 8 7 6 5 Single-pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy Single-device value at dual operation (Note 2a, 4) Channel temperature Storage temperature range Note: For Notes 1 to 4, refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Handle with care. 1 2006-11-17 TPC8022-H Thermal Characteristics Characteristic Thermal resistance, channel to ambient (t = 10 s) Thermal resistance, channel to ambient (t = 10 s) (Note 2a) (Note 2b) Symbol Rth (ch-a) Rth (ch-a) Max 65.8 125 Unit °C/W Marking (Note 5) TPC8022 H Part No. (or abbreviation code) Lot No. (weekly code) A line indicates lead (Pb)-free package or lead (Pb)-free finish. Note 1: The channel temperature should not exceed 150°C during use. Note 2: a) Device mounted on a glass-epoxy board (a) b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (Unit : mm) FR-4 25.4 × 25.4 × 0.8 (Unit : mm) (a) (b) Note 3: VDD = 24 V, Tch = 25°C (initial), L = 0.5 mH, RG = 25 Ω, IAR = 7.5 A Note 4: Repetitive rating: pulse width limited by maximum channel temperature Note 5: • on the lower left of the marking indicates Pin 1. * Weekly code: (Three digits) Week of manufacture (01 for first week of year, continuing up to 52 or 53) Year of manufacture (The last digit of the calendar year) 2 2006-11-17 TPC8022-H Electrical Characteristics (Ta = 25°C) Characteristic Gate leakage current Drain cutoff current Drain−source breakdown voltage Gate threshold voltage Drain−source ON-resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) RDS (ON) |Yfs| Ciss Crss Coss tr VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±16 V, VDS = 0 V VDS = 40 V, VGS = 0 V ID = 10 mA, VGS = 0 V ID = 10 mA, VGS = −20 V VDS = 10 V, ID = 1 mA VGS = 4.5 V, ID = 3.8 A VGS = 10 V, ID = 3.8 A VDS = 10 V, ID = 3.8 A Min — ― 40 25 1.1 Typ. ― ― ― Max ±10 10 ― Unit µA µA V V mΩ S ⎯ ― 27 22 15 650 55 240 3 ⎯ 2.3 35 27 ― ― ― ― ― ⎯ ― 7.5 ― ― ― ― pF Turn−on time Switching time Fall time ton tf toff RL = 5.3 Ω 10 V VGS 0V ID = 3.8 A VOUT ― 9 ― ns 4.7 Ω VDD ∼ 20 V − Duty < 1%, tw = 10 µs = VDD ≈ 32 V, VGS = 10 V, ID = 7.5 A VDD ≈ 32 V, VGS = 5 V, ID = 7.5 A ― 2 ― Turn−off time Total gate charge (gate−source plus gate−drain) Gate−source charge Gate−drain (“Miller”) charge Gate switching charge ― ― ― ― 18 11 6.2 2.1 2.7 3.5 ― ― ― ― ― ― nC Qg Qgs1 Qgd Qsw VDD ≈ 32 V, VGS = 10 V, ID = 7.5 A ― ― Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristic Drain reverse current Pulse (Note 1) Symbol IDRP VDSF Test Condition — IDR = 7.5 A, VGS = 0 V Min — — Typ. — — Max 30 −1.2 Unit A V Forward voltage (diode) 3 2006-11-17 TPC8022-H ID – VDS 10 10 6 3.8 3.4 Common source Ta = 25°C Pulse test 20 10 6 4 ID – VDS 3.8 3.6 Common source Ta = 25°C Pulse test 3.4 Drain current ID (A) 4.5 6 4 3.1 Drain current ID (A) 8 5 3.2 16 5 4.5 12 3.2 8 3 2.8 VGS = 2.6 V 0 0 3 4 2.9 2.8 2 2.7 VGS = 2.6 V 0 0 0.2 0.4 0.6 0.8 1.0 4 0.4 0.8 1.2 1.6 2.0 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID – VGS 30 VDS – VGS 0.5 25 Drain-source voltage VDS (V) Common source VDS = 10 V Pulse test Common source Ta = 25°C Pulse test 0.4 Drain current ID (A) 20 0.3 15 0.2 10 ID = 7.5 A 25 100 Ta = −55°C 5 0.1 3.8 1.9 0 0 1 2 3 4 5 6 0 0 2 4 6 8 10 12 Gate-source voltage VGS (V) Gate-source voltage VGS (V) |Yfs| – ID RDS (ON) – ID 100 (S) 100 Forward transfer admittance |Yfs| Drain-source ON-resistance RDS (ON) (mΩ) Common source VDS = 10 V Pulse test 4.5 10 Ta = −55°C 25 100 VGS = 10 V 10 1 Common source Ta = 25°C Pulse test 1 0.1 1 10 100 0.1 0.1 1 10 100 Drain current ID (A) Drain current ID (A) 4 2006-11-17 TPC8022-H RDS (ON) – Ta 50 Common source 100 Pulse test 40 ID = 7.5 A Common source Ta = 25°C Pulse test IDR – VDS (A) Drain-source ON-resistance RDS (ON) (mΩ) 3.8 1.9 10 4.5 3 Drain reverse current IDR 10 30 VGS = 4.5 V 20 10 V 10 ID = 7.5 A, 3.8 A, 1.9 A 1 1 0 −80 −40 0 40 80 120 160 0.1 0 −0.2 −0.4 −0.6 VGS = 0 V −0.8 −1.0 −1.2 Ambient temperature Ta (°C) Drain-source voltage VDS (V) Capacitance – VDS 10000 Common source Ta = 25°C f = 1 MHz VGS = 0 V 1000 Ciss 2.5 Vth – Ta Gate threshold voltage Vth (V) 2.0 Capacitance C (pF) 1.5 100 Coss 1.0 Common source 0.5 VDS = 10 V ID = 1 mA Pulse test −40 0 40 80 120 160 Crss 10 0.1 1 10 100 0 −80 Drain-source voltage VDS (V) Ambient temperature Ta (°C) PD – Ta 2.0 Dynamic input/output characteristics 50 (W) (V) Drain power dissipation PD 1.6 (2) Device mounted on a glass-epoxy board (b) (Note 2b) 40 16 t = 10 s 1.2 (2) 0.8 Drain-source voltage VDS VDS 30 16 12 20 8 VDD = 32 V 8 0.4 10 VGS 0 0 4 8 12 16 4 0 0 50 100 150 200 0 20 Ambient temperature Ta (°C) Total gate charge Qg (nC) 5 2006-11-17 Gate-source voltage VGS (V) (1) (1) Device mounted on a glass-epoxy board (a) (Note 2a) Common source ID = 7.5 A Ta = 25°C Pulse test 20 TPC8022-H rth − tw 1000 (1) Device mounted on a glass-epoxy board (a) (Note 2a) rth (°C/W) (2) Device mounted on a glass-epoxy board (b) (Note 2b) (2) (1) 100 Transient thermal impedance 10 1 Single - pulse 0.1 0.001 0.01 0.1 1 10 100 1000 Pulse width Safe operating area 100 tw (s) ID max (Pulse)* (A) t =1 ms* 10 10 ms * Drain current ID 1 * Single-pulse Ta = 25°C Curves must be derated linearly with increase in temperature. 0.1 0.1 1 VDSSmax 10 100 Drain-source voltage VDS (V) 6 2006-11-17 TPC8022-H 7 2006-11-17