TPC8035-H
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅥ-H)
TPC8035-H
High Efficiency DC-DC Converter Applications
Notebook PC Applications
Portable Equipment Applications
•
Small footprint due to small and thin package
•
High-speed switching
•
Small gate charge: QSW = 17 nC (typ.)
•
Low drain-source ON-resistance: RDS (ON) = 2.3 mΩ (typ.)
•
High forward transfer admittance: |Yfs| = 70 S (typ.)
•
Low leakage current: IDSS = 10 μA (max) (VDS = 30 V)
•
Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 1 mA)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
VDSS
30
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
30
V
Gate-source voltage
VGSS
±20
V
JEDEC
―
(Note 1)
ID
18
Pulsed (Note 1)
IDP
72
A
JEITA
―
PD
1.9
W
PD
1.0
W
EAS
211
mJ
IAR
18
A
EAR
0.082
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
DC
Drain current
Drain power dissipation
(t = 10 s)
(Note 2a)
Drain power dissipation
(t = 10 s)
(Note 2b)
Single pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
(Note 2a) (Note 4)
TOSHIBA
2-6J1B
Weight: 0.085 g (typ.)
Circuit Configuration
Note: For Notes 1 to 4, refer to the next page.
8
7
6
5
1
2
3
4
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/”Derating”
Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
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TPC8035-H
Thermal Characteristics
Characteristic
Thermal resistance, channel to ambient
(t = 10 s)
(Note 2a)
Thermal resistance, channel to ambient
(t = 10 s)
(Note 2b)
Symbol
Max
Unit
Rth (ch-a)
65.8
°C/W
Rth (ch-a)
125
°C/W
Marking (Note 5)
TPC8035
H
Part No. (or abbreviation code)
Lot No.
A line indicate lead(Pb)-free finish.
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: (a) Device mounted on a glass-epoxy board (a)
(b) Device mounted on a glass-epoxy board (b)
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
(a)
(b)
Note 3: VDD = 24 V, Tch = 25°C (initial), L = 500 μH, RG = 25 Ω, IAR = 18 A
Note 4: Repetitive rating: pulse width limited by max channel temperature
Note 5: • on lower left of the marking indicates Pin 1.
* Weekly code: (Three digits)
Week of manufacture
(01 for the first week of a year: sequential number up to 52 or 53)
Year of manufacture
(The last digit of a year)
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TPC8035-H
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±20 V, VDS = 0 V
⎯
⎯
±100
nA
Drain cut-OFF current
IDSS
VDS = 30 V, VGS = 0 V
⎯
⎯
10
μA
V (BR) DSS
ID = 10 mA, VGS = 0 V
30
⎯
⎯
V (BR) DSX
ID = 10 mA, VGS = −20 V
15
⎯
⎯
VDS = 10 V, ID = 1 mA
1.3
⎯
2.3
VGS = 4.5 V, ID = 9 A
⎯
2.6
3.6
VGS = 10 V, ID = 9 A
⎯
2.3
3.2
VDS = 10 V, ID = 9 A
35
70
⎯
⎯
6000
7800
⎯
380
610
⎯
1100
⎯
⎯
1.0
1.5
⎯
5.1
⎯
⎯
16
⎯
Drain-source breakdown voltage
Gate threshold voltage
Vth
Drain-source ON-resistance
RDS (ON)
Forward transfer admittance
|Yfs|
Input capacitance
Ciss
Reverse transfer capacitance
Crss
Output capacitance
Coss
Gate resistance
rg
VDS = 10 V, VGS = 0 V, f = 1 MHz
tr
VGS
Turn-ON time
ton
Fall time
Total gate charge
(gate-source plus gate-drain)
toff
Qg
Gate-source charge 1
Qgs1
Gate-drain (“miller”) charge
Qgd
Gate switch charge
QSW
VOUT
11
⎯
⎯
69
⎯
VDD ≈ 24 V, VGS = 10 V, ID = 18 A
⎯
82
⎯
VDD ≈ 24 V, VGS = 5 V, ID = 18 A
⎯
44
⎯
⎯
14
⎯
⎯
13
⎯
⎯
17
⎯
VDD ≈ 15 V
Duty ≤ 1%, tw = 10 μs
VDD ≈ 24 V, VGS = 10 V, ID = 18 A
V
mΩ
S
pF
Ω
ns
⎯
tf
Turn-OFF time
0V
4.7 Ω
Switching time
ID = 9 A
10 V
RL = 1.67Ω
Rise time
VDS = 10 V, VGS = 0 V, f = 1 MHz
V
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Drain reverse current
Forward voltage (diode)
Pulse
(Note 1)
Symbol
Test Condition
Min
Typ.
Max
Unit
IDRP
⎯
⎯
⎯
72
A
⎯
⎯
−1.2
V
VDSF
IDR = 18 A, VGS = 0 V
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TPC8035-H
8 6
10
20
ID – VDS
5
4.5
10
2.7
2.65
4.5
2.6
(A)
(A)
ID
2.55
12
2.5
Drain current
ID
ID – VDS
5
50
16
Drain current
8 6
Common source
Ta = 25°C
Pulse test
2.4
8
4
2.9
2.8
Common source
Ta = 25°C
Pulse test
40
2.7
30
2.6
20
2.5
10
VGS = 2.3 V
0
0
0.2
0.4
0.6
Drain-source voltage
0.8
VDS
VGS = 2.3 V
0
0
1
(V)
0.4
Drain-source voltage
ID – VGS
VDS
2
(V)
0.2
Common source
Ta = 25℃
Pulse test
(V)
Common source
VDS = 10 V
Pulse test
VDS
(A)
24
Drain-source voltage
ID
Drain current
1.6
VDS – VGS
40
32
1.2
0.8
16
Ta = −55°C
100
25
8
0.15
0.1
ID = 18 A
0.05
9
4.5
0
0
1
2
3
4
Gate-source voltage
VGS
0
0
5
(V)
8
VGS
10
(V)
RDS (ON) – ID
Drain-source ON-resistance
RDS (ON) (mΩ)
(S)
|Yfs|
Forward transfer admittance
6
10
Common source
VDS = 10 V
Pulse test
100
Ta = −55°C
100
10
25
1
0.1
0.1
4
Gate-source voltage
⎪Yfs⎪ – ID
1000
2
1
Drain current
10
ID
4.5
VGS = 10 V
Common source
Ta = 25 ℃
Pulse test
1
0.1
100
(A)
1
Drain current
4
10
ID
100
(A)
2008-08-22
TPC8035-H
RDS (ON) – Ta
IDR – VDS
5
100
10
(A)
ID = 4.5 A,9 A,18 A
3
ID = 4.5 A,9 A,18 A
VGS = 4.5 V
2
VGS = 10 V
1
4.5
3
IDR
4
Drain reverse current
Drain-source ON-resistance
RDS (ON) (mΩ)
Common source
Pulse test
1
10
VGS = 0 V
Common source
Ta = 25°C
Pulse test
0
−80
−40
0
40
Ambient temperature
80
120
Ta
1
0
160
−0.2
(°C)
−0.4
Capacitance – VDS
Vth (V)
Gate threshold voltage
Crss
100
Common source
VGS = 0 V
f = 1 MHz
Ta = 25°C
80
120
1
0.5
Common source
VDS = 10 V
ID = 1 mA
Pulse test
0
−80
100
10
1.5
−40
Ambient temperature
VDS (V)
(V)
VDS
(2)
0.5
40
80
Ambient temperature
(°C)
50
Drain-source voltage
1.5
Ta
160
Dynamic input/output
characteristics
(1)Device mounted on a glass-epoxy
board(a) (Note 2a)
(2)Device mounted on a glass-epoxy
board(b) (Note 2b)
t=10 s
(1)
40
120
Ta
(°C)
16
12
30
VDS
VDD = 6 V
20
24 V
8
4
20
40
Total gate charge
5
12 V
10
0
0
160
20
Common source
ID = 18 A
40 Ta = 25°C
Pulse test
(V)
2
0
VGS
1
2
PD – Ta
(W)
(V)
60
Qg
80
Gate-source voltage
(pF)
C
Capacitance
Coss
Drain-source voltage
PD
VDS
−1.2
Vth – Ta
1000
10
0.1
Drain power dissipation
−1.0
2.5
Ciss
0
0
−0.8
Drain-source voltage
10000
1.0
−0.6
0
100
(nC)
2008-08-22
TPC8035-H
rth – tw
Transient thermal impedance
rth (°C/W)
1000
(1) Device mounted on a glass-epoxy board (a) (Note 2a)
(2) Device mounted on a glass-epoxy board (b) (Note 2b)
(2)
100
(1)
10
1
0.1
0.01
0.0001
Single - pulse
0.001
0.01
0.1
1
Pulse width
tw
10
100
1000
(s)
Safe operating area
100
ID max (Pulse) *
t =1 ms *
Drain current
ID
(A)
1000
10 ms *
10
1
* Single – pulse Ta = 25℃
Curves must be derated
linearly with increase in
temperature.
0.1
0.1
VDSS max
1
Drain-source voltage
10
VDS
100
(V)
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TPC8035-H
RESTRICTIONS ON PRODUCT USE
20070701-EN GENERAL
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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