TPC8204
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOSII)
TPC8204
Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs
l Small footprint due to small and thin package l Low drain−source ON resistance l Low leakage current l Enhancement−mode : RDS (ON) = 16 mΩ (typ.) l High forward transfer admittance : |Yfs| = 18 S (typ.) : IDSS = 10 µA (max) (VDS = 20 V) : Vth = 0.5~1.2 V (VDS = 10 V, ID = 200 µA) Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20kΩ) Gate-source voltage Drain curren DC Pulse (Note 1) Symbol VDSS VDGR VGSS ID IDP PD (1) Rating 20 20 ±12 6 24 1.5 W PD(2) 1.1 Unit V V V A
JEDEC JEITA TOSHIBA
― ― 2-6J1E
Single-device operation Drain power (Note 3a) dissipation (t = 10s) Single-device value (Note 2a) at dual operation (Note 3b) Drain power dissipation (t = 10s) Single-device value (Note 2b) at dual operation (Note 3b) Single pulse avalanche energy (Note 4) Avalanche current (Note 1) Single-device operation (Note 3a)
Weight: 0.080 g (typ.)
Circuit Configuration
PD (1) 0.75 W PD (2) EAS IAR EAR Tch Tstg 0.45
46.8 6 0.1 150 −55~150
mJ A mJ °C °C
Repetitive avalanche energy Single-device value at operation (Note 2a, Note 3b, Note 5) Channel temperature Storage temperature range
Note: For (Note 1), (Note 2a), (Note 2b), (Note 3a), (Note 3b), (Note 4) and (Note 5) please refer to the next page. This transistor is an electrostatic sensitive device. Please handle with caution.
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Thermal Characteristics
Characteristics Single-device operation (Note 3a) Symbol Rth (ch-a) (1) Rth (ch-a) (2) Rth (ch-a) (1) Rth (ch-a) (2) Max 83.3 Unit
Thermal resistance, channel to ambient (t = 10s) (Note 2a) Single-device value at dual operation (Note 3b)
114 °C/W 167
Thermal resistance, channel to ambient (t = 10s) (Note 2b) Single-device value at dual operation (Note 3b)
Single-device operation (Note 3a)
278
Marking (Note 6)
TPC8204
※
Type Lot No.
Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: a) Device mounted on a glass-epoxy board (a)
FR-4 25.4 × 25.4 × 0.8 (Unit: mm)
b)
Device mounted on a glass-epoxy board (b)
FR-4 25.4 × 25.4 × 0.8 (Unit: mm)
(a)
(b)
Note 3: a) The power dissipation and thermal resistance values are shown for a single device (During single-device operation, power is only applied to one device.). b) The power dissipation and thermal resistance values are shown for a single device (During dual operation, power is evenly applied to both devices.). Note 4: VDD = 16 V, Tch = 25°C (initial), L = 1.0 mH, RG = 25 Ω, IAR = 6 A Note 5: Repetitive rating; pulse width limited by maximum channel temperature. Note 6: ● on lower right of the marking indicates Pin 1. ※ Weekly code:(Three digits) Week of manufacture (01 for first week of year, continues up to 52 or 53) Year of manufacture (One low-order digits of calendar year)
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Electrical Characteristics (Ta = 25°C)
Characteristic Gate leakage current Drain cut−off current Drain−source breakdown voltage Gate threshold voltage Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) Drain−source ON resistance RDS (ON) RDS (ON) Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time |Yfs| Ciss Crss Coss tr VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±10 V, VDS = 0 V VDS = 20 V, VGS = 0 V ID = 10 mA, VGS = 0 V ID = 10 mA, VGS = −12 V VDS = 10 V, ID = 200 µA VGS = 2 V, ID = 3 A VGS = 2.5 V, ID = 3A VGS = 4 V, ID = 3 A VDS = 10 V, ID = 3 A Min — — 20 15 0.5 — — — 8.5 — — — — Typ. — — — — — 22 19 16 17 2740 520 600 3 Max ±10 10 — — 1.2 45 30 20 — — — — — pF S mΩ V Unit µA µA V
Turn−on time Switching time Fall time
ton
—
12
— ns
tf
—
21
—
Turn−off time Total gate charge (gate−source plus gate−drain) Gate−source charge Gate−drain (“miller”) charge
toff Qg Qgs Qgd VDD ≈ 16 V, VGS = 5 V, ID = 6 A
— — — —
102 31 24 7
— — — — nC
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics Drain reverse current Pulse (Note 1) Symbol IDRP VDSF IDR = 6 A, VGS = 0 V Test Condition — Min — — Typ. — — Max 24 −1.2 Unit A V
Forward voltage (diode)
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RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice.
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