TPC8213-H

TPC8213-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC8213-H High-Efficiency DC／DC Converter Applications Notebook PC Applications Portable-Equipment Applications • • • • • • • Small footprint due to small and thin package High-speed switching Small gate charge: QSW = 2.9 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 40 mΩ (typ.) High forward transfer admittance: |Yfs| =11 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD (1) PD (2) PD (1) PD 2) EAS IAR EAR Tch Tstg Rating 60 60 ±20 5 20 1.5 W 1.1 0.75 W 0.45 90 5 0.087 150 −55～150 mJ A mJ ℃ ℃ Unit V V V A JEDEC JEITA TOSHIBA ― ― 2-6J1E Single-device Drain power operation (Note 3a) dissipation Single-device value (t = 10 s) (Note 2a) at dual operation (Note 3b) Drain power dissipation Single-device value (t = 10 s) (Note 2b) at dual operation (Note 3b) Single-pulse avalanche energy (Note 4) Avalanche current Repetitive avalanche energy (Note 2a, Note 3b, Note 5) Channel temperature Storage temperature range Single-device operation (Note 3a) Weight: 0.085 g (typ.) Circuit Configuration Note: For Notes 1 to 5, refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Handle with care. 1 2006-11-17 TPC8213-H Thermal Characteristics Characteristic Single-device operation (Note 3a) Symbol Rth (ch-a) (1) Rth (ch-a) (2) Rth (ch-a) (1) Rth (ch-a) (2) Max 83.3 Unit Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Single-device value at dual operation (Note 3b) 114 °C/W 167 Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Single-device value at dual operation (Note 3b) Single-device operation (Note 3a) 278 Marking TPC8213 H Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Note 1: The channel temperature should not exceed 150°C during use. Note 2: a) Device mounted on a glass-epoxy board (a) FR-4 25.4 × 25.4 × 0.8 (unit: mm) b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (unit: mm) (a) (b) Note 3: a) The power dissipation and thermal resistance values are shown for a single device (During single-device operation, power is only applied to one device.) b) The power dissipation and thermal resistance values are shown for a single device (During dual operation, power is evenly applied to both devices.) Note 4: VDD = 24 V, Tch = 25°C (Initial), L = 5 mH, RG = 25 Ω, IAR = 5.0 A Note 5: Repetitive rating: pulse width limited by maximum channel temperature Note 6: • on the lower left of the marking indicates Pin 1. * Weekly code: (Three digits) Week of manufacture (01 for first week of year, continuing up to 52 or 53) Year of manufacture (The last digit of the calendar year) 2 2006-11-17 TPC8213-H Electrical Characteristics (Ta = 25°C) Characteristic Gate leakage current Drain cutoff current Drain−source breakdown voltage Gate threshold voltage Drain−source ON-resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) RDS (ON) |Yfs| Ciss Crss Coss tr ton 4.7 Ω tf toff ID = 2.5 A 出力 RL = 12 Ω VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±16 V, VDS = 0 V VDS = 60 V, VGS = 0 V ID = 10 mA, VGS = 0 V ID = 10 mA, VGS = −20 V VDS = 10 V, ID = 1 mA VGS = 4.5 V, ID = 2.5 A VGS = 10 V , ID = 2.5 A VDS = 10 V , ID = 2.5 A Min — — 60 45 1.1 — — 5.5 — — — — Typ. — — — — — 45 40 11 625 35 175 4 Max ±10 10 — — 2.3 56 50 — — — — — pF V mΩ S Unit µA µA V 10 V VGS 0V Turn−on time Switching time Fall time — 10 — ns VDD ∼ 30 V − Duty < 1%, tw = 10 µs = VDD ∼ 48 V, VGS = 10 V, ID = 5 A − VDD ∼ 48 V, VGS = 5 V, ID = 5 A − — 2 — Turn−off time Total gate charge (gate-source plus gate-drain) (Note 7) Gate-source charge 1 Gate-drain (“Miller”) charge Gate switch charge — ⎯ ⎯ ⎯ 19 11 6 1.6 2.4 2.9 — ⎯ ⎯ ⎯ ⎯ ⎯ nC Qg Qgs1 Qgd QSW VDD ∼ 48 V, VGS = 10 V, ID = 5 A − ⎯ ⎯ Source−Drain Ratings and Characteristics (Ta = 25°C) Characteristics Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol IDRP VDSF Test Condition — IDR = 5 A, VGS = 0 V Min — — Typ. — — Max 20 −1.2 Unit A V 3 2006-11-17 TPC8213-H ID – VDS 10 8 8 10 3.75 20 Common source Ta = 25°C 3.5 Pulse test 10 8 6 4.5 5 ID – VDS 3.75 Common source Ta =25°C Pulse test 3.5 12 Drain current ID (A) 5 6 4.5 3.25 Drain current ID (A) 6 16 3.25 3 4 8 3 2 2.75 VGS = 2.5V 4 2.75 VGS = 2.5V 0 0 0.2 0.4 0.6 0.8 1 0 0 1 2 3 4 5 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID – VGS 20 0.5 VDS – VGS Common source Drain-source voltage VDS (V) Common source 16 VDS = 10 V Pulse test Ta = 25℃ 0.4 Pulse test Drain current ID (A) 12 0.3 ID = 5 A 0.2 8 100 4 25 0 0 Ta = −55°C 0.1 2.5 1.3 1 2 3 4 5 0 0 2 4 6 8 10 12 Gate-source voltage VGS (V) Gate-source voltage VGS (V) ⎪Yfs⎪ – ID (S) 100 1000 Common source Ta = 25°C Pulse test 100 4.5 VGS = 10 V 10 RDS (ON) – ID Forward transfer admittance |Yfs| 10 Ta = −55°C 25 100 1 Common source VDS = 10 V 0.1 0.1 Pulse test 1 10 100 Drain-source ON-resistance RDS (ON) (mΩ) 1 0.1 1 10 100 Drain current ID (A) Drain current ID (A) 4 2006-11-17 TPC8213-H RDS (ON) – Ta 100 Common source Pulse test 80 1.3A,2.5A 60 ID = 5A 100 Common source Ta = 25°C Pulse test IDR – VDS Drain-source ON-resistance RDS (ON) (mΩ) Drain reverse current IDR (A) 10 10 3 5 40 VGS = 4.5 V ID = 1.3A,2.5A,5A 1 20 VGS = 10 V 1 0 VGS = -1 V 0 −80 −40 0 40 80 120 160 0.1 0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 Ambient temperature Ta (°C) Drain-source voltage VDS (V) Capacitance – VDS 10000 Common source VGS = 0 V f = 1 MHz 2.5 Vth – Ta (pF) 2 Ciss Ta = 25°C 1000 Gate threshold voltage Vth (V) Capacitance C 1.5 Coss 100 Crss 1 Common source ソース接地 0.5 VDS ==110VV DS 0 ID= 1 mA D = 1 mA Pulse test パルス測定 10 0.1 1 10 100 0 −80 −40 0 40 80 120 160 Drain-source voltage VDS (V) Ambient temperature Ta (°C) PD – Ta 2 Dynamic input / output characteristics 60 12 VDS Drain-source voltage VDS (V) 1.6 (1) 40 1.2 (2) 24 8 30 0.8 (3) 48 Common source VGS ID = 5 A Ta = 25°C Pulse test 6 20 4 (4) 0.4 10 2 0 0 40 80 120 160 0 0 4 8 12 0 16 Ambient temperature Ta (°C) Total gate charge Qg (nC) 5 2006-11-17 Gate-source voltage VGS Device mounted on a Glass-epoxy board (a)(Note 2a) (1)Single-device operation (Note 3a) (2)Single-device value at dual operation(Note 3b) Device mounted on a glass-epoxy board(b)(Note 2b) (3)Single-device operation(Note 3a) (4)Single-device value at dual operation(Note 3b) t=10s 50 VDD = 12 V 10 Drain power dissipation PD (W) (V) TPC8213-H rth – tw 1000 Single - pulse (4) (3) (2) 100 (1) Transient thermal impedance rth (℃/W) 10 Device mounted on a glass-epoxy board (a) (note 2a) (1)Single-device operation (Note 3a) (2)Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3)Single-device operation (Note 3a) (4)Single-device value at dual operation (Note 3b) 0.1 0.001 0.001 0.01 0.1 1 10 100 1000 1 Pulse width tw (s) Safe operating area 100 Single-device value at dual operation (note 3b) ID max (Pulse) * t=1ms * 10 10ms * Drain current ID (A) 1 * Single - pulse Ta=25℃ Curves must be derated linearly with increase in temperature. 0.1 0.1 VDSS max 10 100 1 Drain-source voltage VDS (V) 6 2006-11-17 TPC8213-H 7 2006-11-17