TPCA8003-H
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII)
TPCA8003-H
High Efficiency DC/DC Converter Applications Notebook PC Applications Portable Equipment Applications
6.0±0.3 0.5±0.1 8 1.27 5.0±0.2
Unit: mm
0.4±0.1 5 0.05 M A
• • • • • • •
Small footprint due to a small and thin package High speed switching Small gate charge: QSW = 8.4 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 5.1 mΩ (typ.) High forward transfer admittance: |Yfs| = 60S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA)
0.15±0.05
1 5.0±0.2 0.95±0.05
4
0.595 A 0.166±0.05
S 1
0.05 S 4 1.1±0.2
0.6±0.1
Absolute Maximum Ratings (Ta = 25°C)
8
4.25±0.2
Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1)
Symbol VDSS VDGR VGSS ID IDP PD PD PD EAS IAR
Rating 30 30 ±20 35 105 45 2.8
Unit V V V A W W
5 0.8±0.1
1,2,3:SOURCE 5,6,7,8:DRAIN
4:GATE
JEDEC JEITA TOSHIBA
― ― 2-5Q1A
Pulsed (Note 1) (Tc=25℃) (t = 10 s) (Note 2a) (t = 10 s) (Note 2b)
Weight: 0.069 g (typ.)
Drain power dissipation Drain power dissipation
Circuit Configuration
8 7 6 5
Drain power dissipation
1.6
W
Single-pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Tc=25℃) (Note 4) Channel temperature Storage temperature range
159 35 4.5 150 −55 to 150
mJ A mJ °C °C 1 2 3 4
EAR Tch Tstg
Note: For Notes 1 to 4, refer to the next page.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
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2006-11-16
3.5±0.2
TPCA8003-H
Thermal Characteristics
Characteristic Thermal resistance, channel to case (Tc=25℃) Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Symbol Rth (ch-c) Max 2.78 Unit °C/W
Rth (ch-a)
44.6
°C/W
Thermal resistance, channel to ambient (t = 10 s) (Note 2b)
Rth (ch-a)
78.1
°C/W
Marking (Note 5)
TPCA 8003-H
※
Type Lot No.
Note 1: The channel temperature should not exceed 150°C during use. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b)
FR-4 25.4 × 25.4 × 0.8 (Unit: mm)
FR-4 25.4 × 25.4 × 0.8 (Unit: mm)
(a)
(b)
Note 3: VDD = 24 V, Tch = 25°C (initial), L = 0.1 mH, RG = 25 Ω , IAR = 35 A Note 4: Repetitive rating: pulse width limited by max. channel temperature Note 5: * Weekly code: (Three digits) Week of manufacture (01 for first week of year, continuing up to 52 or 53) Year of manufacture (The last digit of the calendar year)
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TPCA8003-H
Electrical Characteristics (Ta = 25°C)
Characteristic Gate leakage current Drain cutoff current Drain-source breakdown voltage Gate threshold voltage Drain-source ON-resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain (“Miller”) charge Gate switch charge tf toff Qg Qgs1 Qgd QSW VDD ∼ 24 V, VGS = 10 V, ID = 35 A − Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) |Yfs| Ciss Crss Coss tr ton VGS 10 V 0V 4.7 Ω ID = 18 A VOUT RL =0.83Ω VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±16 V, VDS = 0 V VDS = 30 V, VGS = 0 V ID = 10 mA, VGS = 0 V ID = 10 mA, VGS = −20 V VDS = 10 V, ID = 1 mA VGS = 4.5 V, ID = 18 A VGS = 10 V, ID = 18 A VDS = 10 V, ID = 18 A Min ⎯ ⎯ 30 15 1.1 ⎯ ⎯ 30 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Typ. ⎯ ⎯ ⎯ ⎯ ⎯ 7.3 5.1 60 1465 175 610 4 11 10 36 25 13 5.8 5.1 8.4 Max ±10 10 ⎯ ⎯ 2.3 9.5 6.6 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ns ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ nC pF Unit µA µA V V mΩ S
VDD ∼ 15 V − Duty < 1%, tw = 10 µs = VDD ∼ 24 V, VGS = 10 V, ID = 35 A − VDD ∼ 24 V, VGS = 5 V, ID = 35 A −
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristic Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol IDRP VDSF Test Condition ⎯ IDR = 35 A, VGS = 0 V Min ⎯ ⎯ Typ. ⎯ ⎯ Max 105 −1.2 Unit A V
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TPCA8003-H
ID – VDS
50 10 8 40 6 5 4.5 4 3.6 3.8 3.4 3.2 Common source Ta = 25°C Pulse test 100 10 8 6 4.5 4 4.1
ID – VDS
Common source Ta = 25°C Pulse test 3.8 3.6 60 3.4 40 3.2 3 2.8 VGS = 2.6V
5
Drain current ID (A)
30
20
3
Drain current ID (A)
80
10
2.8
20
0 0
0.2
0.4
0.6
0.8
1
0 0
VGS = 2.6V 1 2 3 4 5
Drain-source voltage VDS
(V)
Drain-source voltage VDS
(V)
ID – VGS
100
VDS – VGS
0.4
80
Drain-source voltage VDS (V)
Common source VDS = 10 V Pulse test
Common source Ta = 25°C Pulse test
0.32
Drain current ID (A)
60
0.24
ID = 35 A
40 Ta = −55°C 20 100 25 0 0 1 2 3 4 5 6
0.16
0.08
18 9
0 0
2
4
6
8
10
Gate-source voltage
VGS (V)
Gate-source voltage
VGS (V)
⎪Yfs⎪ – ID (S)
1000 100 Common source Ta = 25°C Pulse test
RDS (ON) – ID
Forward transfer admittance |Yfs|
100 Ta = −55°C
10
100
25
Drain-source ON-resistance RDS (ON) (mΩ)
10
4.5
VGS = 10 V
1 Common source VDS = 10 V Pulse test 0.1 0.1 1 10 100
1 0.1 1 10 100
Drain current ID (A)
Drain current ID (A)
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TPCA8003-H
RDS (ON) – Ta
20 Common source Pulse test 1000 Common source
IDR – VDS (A)
Ta = 25°C Pulse test ID = 35A 18 9 100 10 3 10 4.5
Drain-source ON-resistance RDS (ON) (mΩ)
16
12
8
VGS = 4.5 V
Drain reverse current IDR
4 VGS = 10 V 0 −80
ID = 35A,18A,9A
1 1 VGS = 0 V 0.1 0 −0.2 −0.4 −0.6 −0.8 −1.0
−40
0
40
80
120
160
Ambient temperature
Ta
(°C)
Drain-source voltage VDS
(V)
Capacitance – VDS
10000 2.5
Vth – Ta
(V) Gate threshold voltage Vth
(pF)
Ciss 1000
2
Capacitance C
1.5
Coss 100
1 Common source 0.5 VDS = 10 V ID = 1 mA Pulse test 0 −80 −40 0 40 80 120 160
Common source VGS = 0 V f = 1 MHz Ta = 25°C
Crss
10 0.1
1
10
100
Drain-source voltage VDS
(V)
Ambient temperature
Ta
(°C)
Dynamic input/output characteristics
50 Common source 20
(V)
Drain-source voltage VDS
ID = 35 A 40 Ta = 25°C Pulse test 30 VDS 20 24 12 VDD = 6 V
16
12
8
10
VGS
4
0 0
8
16
24
32
0 40
Total gate charge Qg
(nC)
Gate-source voltage VGS
(V)
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2006-11-16
TPCA8003-H
rth – tw rth (°C/W)
1000 (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) 100 (Note 2b) (3) Tc=25℃ (1) (2)
Transient thermal impedance
10
(3) 1
Single - pulse 0.1 0.001 0.01 0.1 1 10 100 1000
Pulse width
tw (s)
PD – Ta
3 (1)
(1)Device mounted on a (2)Device mounted on a glass-epoxy board(b) t=10s (Note 2b)
PD – Tc
50
(W)
2.5
(W) Drain power dissipation PD
40 30 20 10 0
glass-epoxy board(a)
(Note 2a)
Drain power dissipation PD
2 (2) 1.5
1
0.5
0 0
40
80
120
160
0
40
80
120
160
Ambient temperature Ta
(°C)
Case temperature
TC
(°C)
Safe operating area
1000
Drain current ID (A)
100
ID max (Pulse) * t=1ms * ID max (Continuous) 10ms *
10
DC Operation Tc = 25℃ * Single - pulse
1
Ta = 25℃ Curves must be derated linearly with increase in temperature. VDSS max 1 10 100
0.1 0.1
Drain-source voltage VDS
(V)
6
2006-11-16
TPCA8003-H
7
2006-11-16
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