TPCA8005-H(TE12LQM

TPCA8005-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPCA8005-H High Efficiency DC／DC Converter Applications Notebook PC Applications Portable Equipment Applications • High speed switching • Small gate charge: QSW =7.7 nC (typ.) 0.15±0.05 High forward transfer admittance: |Yfs| =46 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) • Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA) 0.95±0.05 0.05 S S 1 Absolute Maximum Ratings (Ta = 25°C) Rating Unit Drain-source voltage VDSS 30 V Drain-gate voltage (RGS = 20 kΩ) VDGR 30 V Gate-source voltage VGSS ±20 V (Note 1) ID 27 Pulsed (Note 1) IDP 81 PD 45 W PD 2.8 W PD 1.6 W EAS 95 mJ IAR 27 A EAR 2.7 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Drain current Drain power dissipation (Tc=25℃) Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single-pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Tc=25℃) (Note 4) 4 4.25±0.2 8 Symbol DC A 0.166±0.05 A 1.1±0.2 3.5±0.2 • 0.595 5.0±0.2 0.6±0.1 Low drain-source ON-resistance: RDS (ON) = 6.8 mΩ (typ.) Characteristic 4 1 • 0.05 M A 5 8 5.0±0.2 Small footprint due to a small and thin package 1.27 0.5±0.1 6.0±0.3 • Unit: mm 0.4±0.1 5 0.8±0.1 1,2,3：SOURCE 5,6,7,8：DRAIN 4：GATE JEDEC ― JEITA ― TOSHIBA 2-5Q1A Weight: 0.069 g (typ.) Circuit Configuration 8 7 6 5 1 2 3 4 Note: For Notes 1 to 4, refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Handle with care. 1 2006-11-16 TPCA8005-H Thermal Characteristics Characteristic Thermal resistance, channel to case (Tc=25℃) Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Symbol Max Unit Rth (ch-c) 2.78 °C/W Rth (ch-a) 44.6 °C/W Rth (ch-a) 78.1 °C/W Marking (Note 5) TPCA 8005-H Type Lot No. ※ Note 1: The channel temperature should not exceed 150°C during use. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (a) (b) Note 3: VDD = 24 V, Tch = 25°C (initial), L = 0.1 mH, RG = 25 Ω, IAR = 27 A Note 4: Repetitive rating: pulse width limited by max. channel temperature Note 5: * Weekly code: (Three digits) Week of manufacture (01 for first week of year, continuing up to 52 or 53) Year of manufacture (The last digit of the calendar year) 2 2006-11-16 TPCA8005-H Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V ⎯ ⎯ ±10 μA Drain cutoff current IDSS VDS = 30 V, VGS = 0 V ⎯ ⎯ 10 μA V (BR) DSS ID = 10 mA, VGS = 0 V 30 ⎯ ⎯ V (BR) DSX ID = 10 mA, VGS = −20 V 15 ⎯ ⎯ VDS = 10 V, ID = 1 mA 1.1 ⎯ 2.3 VGS = 4.5 V, ID = 14 A ⎯ 9.5 13 VGS = 10 V, ID = 14 A ⎯ 6.8 9 VDS = 10 V, ID = 14 A 23 46 ⎯ ⎯ 1395 ⎯ ⎯ 140 ⎯ ⎯ 525 ⎯ ⎯ 3 ⎯ ⎯ 9 ⎯ Drain-source breakdown voltage Gate threshold voltage Vth Drain-source ON-resistance RDS (ON) Forward transfer admittance |Yfs| Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss tr VGS Turn-on time ton Fall time toff Total gate charge (gate-source plus gate-drain) Qg Gate-source charge 1 Qgs1 Gate-drain (“Miller”) charge Qgd 8 ⎯ VDD ∼ − 15 V < Duty = 1%, tw = 10 μs ⎯ 27 ⎯ VDD ∼ − 24 V, VGS = 10 V, ID = 27 A ⎯ 24 ⎯ VDD ∼ − 24 V, VGS = 5 V, ID = 27 A ⎯ 13 ⎯ ⎯ 4.7 ⎯ ⎯ 5.6 ⎯ Gate switch charge QSW ⎯ 7.7 ⎯ VDD ∼ − 24 V, VGS = 10 V, ID = 27 A V mΩ S pF ns ⎯ tf Turn-off time 0V 4.7 Ω Switching time ID = 14A VOUT 10 V RL = 1.1Ω Rise time VDS = 10 V, VGS = 0 V, f = 1 MHz V nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristic Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol Test Condition Min Typ. Max Unit IDRP ⎯ ⎯ ⎯ 81 A ⎯ ⎯ −1.2 V VDSF IDR = 27 A, VGS = 0 V 3 2006-11-16 TPCA8005-H ID – VDS ID – VDS 20 10 8 6 50 3.5 5 (A) ID Drain current ID Drain current Common source Ta = 25°C Pulse test 8 3 2.8 4 4 4.5 6 3.2 12 10 8 3.3 4.5 (A) 16 4 3.9 Common source Ta = 25°C Pulse test 5 40 3.7 3.5 30 3.3 20 3 10 VGS = 2.8V VGS = 2.6V 0 0 0.2 0.4 0.6 0.8 Drain-source voltage VDS 0 0 1 (V) 0.4 0.8 Drain-source voltage ID – VGS 40 VDS 2 (V) Common source Ta = 25°C Pulse test VDS 0.4 (A) 30 Drain-source voltage ID Drain current 1.6 VDS – VGS 0.5 Common source VDS = 10 V Pulse test (V) 50 1.2 20 Ta = −55°C 100 10 25 0.3 ID = 27 A 0.2 14 0.1 7 0 0 1 2 4 3 Gate-source voltage 5 VGS 0 0 6 (V) 2 4 Gate-source voltage Drain-source ON-resistance RDS (ON) (mΩ) Forward transfer admittance Ta = −55°C 25 100 1 Common source VDS = 10 V Pulse test 0.1 0.1 1 Drain current 10 ID 8 VGS 10 (V) RDS (ON) – ID 100 |Yfs| (S) ⎪Yfs⎪ – ID 100 10 6 10 (A) 4.5 VGS = 10 V 1 0.1 100 Common source Ta = 25°C Pulse test 1 Drain current 4 10 ID 100 (A) 2006-11-16 TPCA8005-H RDS (ON) – Ta IDR – VDS 20 100 IDR ID = 27A 16 14A 12 7A Drain reverse current Drain-source ON-resistance RDS (ON) (mΩ) Pulse test (A) Common source VGS = 4.5 V 8 ID = 7A,14A,27A 4 VGS = 10 V 10 3 10 4.5 Common source 1 Ta = 25°C VGS = 0 V Pulse test 0 −80 −40 0 40 80 Ambient temperature 120 Ta 1 0 160 (°C) −0.2 −0.4 Drain-source voltage Capacitance – VDS Vth (V) 1000 Coss Common source Gate threshold voltage (pF) VDS (V) 80 120 −1.0 Vth – Ta Ciss C Capacitance −0.8 2.5 10000 100 −0.6 Crss VGS = 0 V f = 1 MHz Ta = 25°C 10 0.1 1 10 Drain-source voltage 1.5 1 Common source 0.5 (V) VDS = 10 V ID = 1 mA Pulse test 0 −80 100 VDS 2 −40 0 40 Ambient temperature Ta 160 (°C) Dynamic input/output characteristics 50 20 VDD = 6 V 30 12 VDS 12 V 24 V 8 20 10 4 VGS 0 0 8 16 Total gate charge 24 Qg (V) VGS 16 32 Gate-source voltage (V) Pulse test Drain-source voltage ID = 27 A 40 Ta = 25°C VDS Common source 0 40 (nC) 5 2006-11-16 TPCA8005-H (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) (2) Device mounted on a glass-epoxy board (b) 100 (Note 2b) (1) (3) Tc=25℃ Transient thermal impedance rth (°C/W) rth – tw 1000 10 (3) 1 Single - pulse 0.1 0.001 0.01 0.1 1 Pulse width 10 tw 100 (s) PD – Ta 3 (Note 2a) (W) (1) (2)Device mounted on a (Note 2b) PD glass-epoxy board(b) ｔ＝10s 2 Drain power dissipation PD (W) board(a) Drain power dissipation PD – Tc 50 (1)Device mounted on a glass-epoxy 2.5 (2) 1.5 1 0.5 0 0 40 80 Ambient temperature 1000 120 Ta 40 30 20 10 0 160 (°C) 0 40 80 Case temperature 120 TC 160 (°C) Safe operating area 100 ID max (Pulse) * 10ms * ID max (Continuous) (A) ID Drain current t=1ms * 10 DC Operation Tc = 25℃ 1 * Single - pulse Ta = 25℃ Curves must be derated linearly with increase in temperature. 0.1 0.1 1 Drain-source voltage VDSS max 10 VDS 100 (V) 6 2006-11-16 TPCA8005-H RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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