TPCA8005-H

TPCA8005-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPCA8005-H High Efficiency DC／DC Converter Applications Notebook PC Applications Portable Equipment Applications 6.0±0.3 0.5±0.1 8 1.27 5.0±0.2 Unit: mm 0.4±0.1 5 0.05 M A • • • • • • • Small footprint due to a small and thin package High speed switching Small gate charge: QSW =7.7 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 6.8 mΩ (typ.) High forward transfer admittance: |Yfs| =46 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA) 0.15±0.05 1 5.0±0.2 0.95±0.05 4 0.595 A 0.166±0.05 S 1 0.05 S 4 1.1±0.2 0.6±0.1 4.25±0.2 Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD PD PD EAS IAR (Tc=25℃) (Note 4) Channel temperature Storage temperature range EAR Tch Tstg Rating 30 30 ±20 27 81 45 2.8 Unit V V V A W W 8 5 0.8±0.1 1,2,3：SOURCE 5,6,7,8：DRAIN 4：GATE JEDEC JEITA TOSHIBA ― ― 2-5Q1A Pulsed (Note 1) Weight: 0.069 g (typ.) Drain power dissipation (Tc=25℃) Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single-pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy Circuit Configuration 8 7 6 5 1.6 W 95 27 2.7 150 −55 to 150 mJ A mJ °C °C 1 2 3 4 Note: For Notes 1 to 4, refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Handle with care. 1 2006-11-16 3.5±0.2 TPCA8005-H Thermal Characteristics Characteristic Thermal resistance, channel to case (Tc=25℃) Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Symbol Rth (ch-c) Max 2.78 Unit °C/W Rth (ch-a) 44.6 °C/W Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Rth (ch-a) 78.1 °C/W Marking (Note 5) TPCA 8005-H ※ Type Lot No. Note 1: The channel temperature should not exceed 150°C during use. (b) Device mounted on a glass-epoxy board (b) Note 2: (a) Device mounted on a glass-epoxy board (a) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (a) (b) Note 3: VDD = 24 V, Tch = 25°C (initial), L = 0.1 mH, RG = 25 Ω , IAR = 27 A Note 4: Repetitive rating: pulse width limited by max. channel temperature Note 5: * Weekly code: (Three digits) Week of manufacture (01 for first week of year, continuing up to 52 or 53) Year of manufacture (The last digit of the calendar year) 2 2006-11-16 TPCA8005-H Electrical Characteristics (Ta = 25°C) Characteristic Gate leakage current Drain cutoff current Drain-source breakdown voltage Gate threshold voltage Drain-source ON-resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain (“Miller”) charge Gate switch charge tf toff Qg Qgs1 Qgd QSW VDD ∼ 24 V, VGS = 10 V, ID = 27 A − Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) |Yfs| Ciss Crss Coss tr ton VGS 10 V 0V 4.7 Ω ID = 14A VOUT RL = 1.1Ω VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±16 V, VDS = 0 V VDS = 30 V, VGS = 0 V ID = 10 mA, VGS = 0 V ID = 10 mA, VGS = −20 V VDS = 10 V, ID = 1 mA VGS = 4.5 V, ID = 14 A VGS = 10 V, ID = 14 A VDS = 10 V, ID = 14 A Min ⎯ ⎯ 30 15 1.1 ⎯ ⎯ 23 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Typ. ⎯ ⎯ ⎯ ⎯ ⎯ 9.5 6.8 46 1395 140 525 3 9 8 27 24 13 4.7 5.6 7.7 Max ±10 10 ⎯ ⎯ 2.3 13 9 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ns ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ nC pF Unit µA µA V V mΩ S VDD ∼ 15 V − Duty < 1%, tw = 10 µs = VDD ∼ 24 V, VGS = 10 V, ID = 27 A − VDD ∼ 24 V, VGS = 5 V, ID = 27 A − Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristic Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol IDRP VDSF Test Condition ⎯ IDR = 27 A, VGS = 0 V Min ⎯ ⎯ Typ. ⎯ ⎯ Max 81 −1.2 Unit A V 3 2006-11-16 TPCA8005-H ID – VDS 20 10 8 6 4 3.5 4.5 5 3.3 3.2 50 8 6 40 10 4.5 5 4 ID – VDS 3.9 Common source Ta = 25°C Pulse test 3.7 3.5 30 3.3 20 16 Drain current ID (A) 12 Common source Ta = 25°C Pulse test 8 3 4 2.8 VGS = 2.6V 0 0 0.2 0.4 0.6 0.8 1 Drain current ID (A) 10 3 VGS = 2.8V 0 0 0.4 0.8 1.2 1.6 2 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID – VGS 50 VDS – VGS 0.5 40 Drain-source voltage VDS (V) Common source VDS = 10 V Pulse test Common source Ta = 25°C Pulse test 0.4 Drain current ID (A) 30 0.3 20 Ta = −55°C 10 100 25 0.2 ID = 27 A 0.1 14 7 0 0 1 2 3 4 5 6 0 0 2 4 6 8 10 Gate-source voltage VGS (V) Gate-source voltage VGS (V) ⎪Yfs⎪ – ID (S) 100 100 Common source Ta = 25°C Pulse test RDS (ON) – ID Forward transfer admittance |Yfs| 10 Ta = −55°C 25 Drain-source ON-resistance RDS (ON) (mΩ) 100 1 10 4.5 VGS = 10 V Common source VDS = 10 V Pulse test 0.1 0.1 1 10 100 1 0.1 1 10 100 Drain current ID (A) Drain current ID (A) 4 2006-11-16 TPCA8005-H RDS (ON) – Ta 20 Common source Pulse test 100 IDR – VDS (A) Drain reverse current IDR Drain-source ON-resistance RDS (ON) (mΩ) 16 14A 12 VGS = 4.5 V 8 ID = 27A 10 3 10 4.5 7A 4 VGS = 10 V 0 −80 ID = 7A,14A,27A Common source Ta = 25°C Pulse test 1 0 1 VGS = 0 V −40 0 40 80 120 160 −0.2 −0.4 −0.6 −0.8 −1.0 Ambient temperature Ta (°C) Drain-source voltage VDS (V) Capacitance – VDS 10000 2.5 Vth – Ta (V) Gate threshold voltage Vth (pF) Ciss 1000 Coss 2 Capacitance C 1.5 1 Common source 0.5 VDS = 10 V ID = 1 mA Pulse test 0 −80 −40 0 40 80 120 160 100 Common source VGS = 0 V f = 1 MHz Ta = 25°C Crss 10 0.1 1 10 100 Drain-source voltage VDS (V) Ambient temperature Ta (°C) Dynamic input/output characteristics 50 Common source 20 Drain-source voltage VDS (V) ID = 27 A 40 Ta = 25°C Pulse test 30 VDS 24 V 20 12 V VDD = 6 V 16 12 8 10 VGS 0 0 4 8 16 24 32 0 40 Total gate charge Qg (nC) Gate-source voltage VGS (V) 5 2006-11-16 TPCA8005-H rth – tw rth (°C/W) 1000 (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) 100 (Note 2b) (3) Tc=25℃ (1) (2) Transient thermal impedance 10 (3) 1 Single - pulse 0.1 0.001 0.01 0.1 1 10 100 1000 Pulse width tw (s) PD – Ta 3 (1) (1)Device mounted on a glass-epoxy (2)Device mounted on a glass-epoxy board(b) ｔ＝10s (Note 2b) PD – Tc 50 (W) 2.5 (W) Drain power dissipation PD 40 30 20 10 0 board(a) (Note 2a) Drain power dissipation PD 2 (2) 1.5 1 0.5 0 0 40 80 120 160 0 40 80 120 160 Ambient temperature Ta (°C) Case temperature TC (°C) Safe operating area 100 ID max (Pulse) * ID max (Continuous) 10 t=1ms * 10ms * Drain current ID (A) DC Operation Tc = 25℃ 1 * Single - pulse Ta = 25℃ Curves must be derated linearly with increase in temperature. 0.1 0.1 VDSS max 10 100 1 Drain-source voltage VDS (V) 6 2006-11-16 TPCA8005-H 7 2006-11-16