TPCA8006-H_06

TPCA8006-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVII) TPCA8006-H 0.5±0.1 Switching Regulator Applications Motor Drive Applications DC／DC Converter Applications 6.0±0.3 Unit: mm 1.27 8 0.4±0.1 5 0.05 M A 5.0±0.2 • • • • • • Small footprint due to a small and thin package High speed switching Low drain-source ON-resistance : RDS (ON) = 41 mΩ (typ.) (VG=10V, ID=9A) 0.15±0.05 1 0.95±0.05 4 0.595 A High forward transfer admittance: |Yfs| = 15 S (typ.) Low leakage current: IDSS = 100 µA (max) (VDS = 100 V) Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) 5.0±0.2 0.05 S S 1 0.6±0.1 4 1.1±0.2 4.25±0.2 Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD PD PD EAS IAR Rating 100 100 ±20 18 36 45 2.8 Unit V V V A W W 8 5 0.8±0.1 1,2,3：SOURCE 5,6,7,8：DRAIN 4：GATE JEDEC JEITA TOSHIBA ― ― 2-5Q1A Pulsed (Note 1) (Tc=25℃) (t = 10 s) (Note 2a) (t = 10 s) (Note 2b) Drain power dissipation Drain power dissipation Weight: 0.069 g (typ.) Drain power dissipation Circuit Configuration 1.6 W 8 7 6 5 Single-pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Note 2a) (Note 4) Channel temperature Storage temperature range 224 18 4.5 150 −55 to 150 mJ A mJ °C °C 1 2 3 4 EAR Tch Tstg Note: For Notes 1 to 4, refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Handle with care. 1 2006-11-20 3.5±0.2 Absolute Maximum Ratings (Ta = 25°C) 0.166±0.05 TPCA8006-H Thermal Characteristics Characteristic Thermal resistance, channel to case (Tc=25℃) Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Symbol Rth (ch-c) Max 2.78 Unit °C/W Rth (ch-a) 44.6 °C/W Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Rth (ch-a) 78.1 °C/W Marking (Note 5) TPCA 8006-H * Type Lot No. Note 1: The channel temperature should not exceed 150°C during use. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (a) (b) Note 3: VDD = 50 V， Tch = 25°C (initial)， L = 0.8 mH， RG = 25 Ω ， IAR = 18 A Note 4: Repetitive rating: pulse width limited by max channel temperature Note 5: * Weekly code: (Three digits) Week of manufacture (01 for first week of year, continuing up to 52 or 53) Year of manufacture (The last digit of the calendar year) 2 2006-11-20 TPCA8006-H Electrical Characteristics (Ta = 25°C) Characteristic Gate leakage current Drain cutoff current Drain-source breakdown voltage Gate threshold voltage Drain-source ON-resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain (“Miller”) charge Gate switch charge tf toff Qg Qgs1 Qgd QSW VDD ∼ 80 V, VGS = 10 V, ID = 18 A − Symbol IGSS IDSS V (BR) DSS Vth RDS (ON) |Yfs| Ciss Crss Coss tr ton VGS 10 V 0V 4.7 Ω ID = 9 A RL = 5.6Ω VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±20 V, VDS = 0 V VDS = 100 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 9 A VDS = 10 V, ID = 9 A Min ⎯ ⎯ 100 3.0 ⎯ 7.5 ⎯ ⎯ ⎯ ⎯ VOUT ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Typ. ⎯ ⎯ ⎯ ⎯ 41 15 780 17 390 3 13 2 13 12 5.6 4.0 6.9 Max ±100 100 ⎯ 5.0 67 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ns ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ nC pF Unit nA µA V V mΩ S VDD ∼ 50 V − Duty < 1%, tw = 10 µs = Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristic Drain reverse current Forward voltage (diode) Pulse Symbol IDRP VDSF Test Condition ⎯ IDR = 18 A, VGS = 0 V Min ⎯ ⎯ Typ. ⎯ ⎯ Max 36 −1.7 Unit A V 3 2006-11-20 TPCA8006-H ID – VDS 20 Common source Ta = 25°C Pulse test 10 9 8.5 8 50 7.5 40 10 ID – VDS 9 8.5 Common source Ta = 25°C Pulse test Drain current ID (A) Drain current ID (A) 16 7 12 8 30 7.5 20 7 10 6.5 VGS = 6V 8 6.5 4 VGS = 6V 0 0 0.4 0.8 1.2 1.6 2 0 0 2 4 6 8 10 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID – VGS 40 VDS – VGS 2 Drain current ID (A) 32 Drain-source voltage VDS (V) Common source VDS = 20 V Pulse test 1.6 Common source Ta = 25°C Pulse test 24 1.2 16 100 0.8 ID = 18 A 8 25 Ta = −55°C 0.4 9 4.5 0 0 2 4 6 8 10 0 0 4 8 12 16 20 Gate-source voltage VGS (V) Gate-source voltage VGS (V) (S) ⎪Yfs⎪ – ID 100 Common source VDS = 20 V Pulse test Ta = −55°C 10 125 1 Common source Ta = 25°C Pulse test RDS (ON) − ID Forward transfer admittance |Yfs| Drain-source ON-resistance RDS (ON) (Ω) 0.1 VGS = 10 V 1 25 0.1 0.1 1 10 100 Drain current ID (A) 0.01 0.1 1 10 100 Drain current ID (A) 4 2006-11-20 TPCA8006-H RDS (ON) − Ta 0.1 Common source Pulse test 9 ID = 18 A 0.06 100 Common source Ta = 25°C Pulse test IDR – VDS 10 5 3 Drain-source ON-resistance RDS (ON) (Ω) 0.08 Drain reverse current IDR (A) 4.5 10 0.04 1 1 VGS = 0 V 0.02 0 −80 −40 0 40 80 120 160 0.1 0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 Ambient temperature Ta (°C) Drain-source voltage VDS (V) Capacitance – VDS 10000 6 Vth – Ta Gate threshold voltage Vth (V) 5 (pF) 1000 Ciss 4 Capacitance C Coss 100 3 2 10 Common source VGS = 0 V f = 1 MHz Ta = 25°C Crss Common source VDS = 10 V ID = 1 mA Pulse test 1 1 0.1 1 10 100 0 −80 −40 0 40 80 120 160 Drain-source voltage VDS (V) Ambient temperature Ta (°C) Dynamic input/output characteristics 100 Common source ID = 18 A Ta = 25°C Pulse test 20 Drain-source voltage VDS (V) 80 VDS 16 40 VGS 8 20 4 0 0 4 8 12 16 0 20 Total gate charge Qg (nC) Gate-source voltage 60 VDD = 80 V 12 VGS (V) 5 2006-11-20 TPCA8006-H rth – tw 1000 (1) Device mounted on a glass-epoxy board (a) (Note2a) (2) Device mounted on a glass-epoxy board (b) 100 (Note2b) (3) Tc = 25°C (2 ) Transient thermal impedance rth (°C/W) (1) 10 (3) 1 Single - pulse 0.1 0.001 0.01 0.1 1 10 100 1000 Pulse width tw (s) PD – Ta 3.0 (1) Device mounted on a PD – Tc 50 Drain power dissipation PD (W) 2.5 (1) glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) (W) Drain power dissipation PD 40 30 20 10 0 2.0 (2) 1.5 ｔ＝ 10s 1.0 0.5 0 0 40 80 120 160 0 40 80 120 160 Ambient temperature Ta (°C) Case temperature Tc (°C) Safe operating area 100 ID max (Pulse) * t = 1ms * (A) 10 ID max (Continuous) 10ms * Drain current ID 1 DC Operation Tc = 25°C *:Single - pulse 0.1 Ta = 25°C Curves must be derated linearly with increase in temperature. 0.01 0.1 1 10 VDSS max 100 1000 Drain-source voltage VDS (V) 6 2006-11-20 TPCA8006-H 7 2006-11-20