TPCA8008-H

TPCA8008-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACHⅡπ-MOSⅤ) TPCA8008-H High Speed Switching Applications Switching Regulator Applications DC/DC Converter Applications 6.0±0.3 Unit: mm 0.5±0.1 1.27 8 0.4±0.1 5 0.05 M A • • • • • • • Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 3.7 nC (typ.) 5.0±0.2 0.15±0.05 1 0.95±0.05 4 0.595 A High forward transfer admittance: |Yfs| = 3.3S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 250 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 5.0±0.2 S 1 4 0.6±0.1 4.25±0.2 Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD PD PD EAS IAR Rating 250 250 ±20 4 8 45 2.8 Unit 8 V V V A W W 5 0.8±0.1 1, 2, 3 : SOURCE 4 : GATE 5, 6, 7, 8 : DRAIN JEDEC JEITA TOSHIBA ― ― 2-5Q1A Pulsed (Note 1) (Tc=25℃) (t = 10 s) (Note 2a) Drain power dissipation Drain power dissipation Weight: 0.069 g (typ.) Drain power dissipation (t = 10 s) (Note 2b) 1.6 W Circuit Configuration 8 7 6 5 Single-pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Tc=25℃) (Note 4) Channel temperature Storage temperature range 11 4 4.5 150 −55 to 150 mJ A mJ °C °C EAR Tch Tstg 1 2 3 3.5±0.2 Absolute Maximum Ratings (Ta = 25°C) 1.1±0.2 0.05 S 0.166±0.05 Low drain-source ON-resistance: RDS (ON) = 0.47Ω (typ.) 4 Note: For Notes 1 to 4, refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Handle with care. 1 2007-12-18 TPCA8008-H Thermal Characteristics Characteristic Thermal resistance, channel to case (Tc=25℃) Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Symbol Rth (ch-c) Max 2.78 Unit °C/W Rth (ch-a) 44.6 °C/W Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Rth (ch-a) 78.1 °C/W Marking (Note 5) TPCA 8008-H * Type Lot No. Note 1: The channel temperature should not exceed 150°C during use. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (a) (b) Note 3: VDD = 50 V, Tch = 25°C (initial), L = 1mH, RG = 25 Ω, IAR = 4 A Note 4: Repetitive rating: pulse width limited by max channel temperature Note 5: * Weekly code: (Three digits) Week of manufacture (01 for first week of year, continuing up to 52 or 53) Year of manufacture (The last digit of the calendar year) 2 2007-12-18 TPCA8008-H Electrical Characteristics (Ta = 25°C) Characteristic Gate leakage current Drain cutoff current Symbol IGSS IDSS V (BR) DSS Drain-source breakdown voltage V (BR) DSX Vth RDS (ON) |Yfs| Ciss Crss Coss Rise time Turn-on time Switching time Fall time tf toff Qg Qgs Qgd Qsw VDD ∼ 200 V, VGS = 10 V, − ID = 4 A tr ton 4.7 Ω VGS 10 V 0V ID = 2 A RL = 62.5 Ω VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±16 V, VDS = 0 V VDS = 250 V, VGS = 0 V ID = 10 mA, VGS = 0 V ID = 10 mA, VGS = −5 V ID = 10 mA, VGS = −20 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 2 A VDS = 10 V, ID = 2 A Min ⎯ ⎯ 250 250 200 2.0 ⎯ 1.5 ⎯ ⎯ ⎯ ⎯ VOUT ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 17 13 ⎯ ns ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Typ. ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 0.47 3.3 600 20 220 8 Max ±10 100 ⎯ ⎯ ⎯ 4.0 0.58 ⎯ ⎯ ⎯ ⎯ ⎯ pF V Ω S V Unit μA μA Gate threshold voltage Drain-source ON-resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain (“Miller”) charge Gate switch charge VDD ∼ 125 V − < 1%, tw = 10 μs Duty = 70 10 7.6 2.4 3.7 nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristic Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol IDRP VDSF Test Condition ⎯ IDR = 4 A, VGS = 0 V Min ⎯ ⎯ Typ. ⎯ ⎯ Max 8 −2.0 Unit A V 3 2007-12-18 TPCA8008-H ID – VDS 5 Common source Ta = 25°C Pulse test 10 8 6 5.2 10 Common source Ta = 25°C Pulse test ID – VDS 10 8 6 (A) (A) 4 5 8 5.7 5.5 ID 3 ID 4.8 6 5.3 Drain current 2 4.6 4.4 Drain current 4 5 4.7 1 VGS = 4 V 0 0 2 4.4 VGS = 4 V 1 2 3 4 5 0 0 2 4 6 8 10 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID – VGS 10 5 VDS – VGS Common source (V) Common source 8 VDS = 10 V Pulse test 25 100 Ta = 25℃ 4 Pulse test ID Drain-source voltage 6 VDS 3 Drain current (A) 4 Ta = −55°C 2 ID = 4 A 2 1 2 1 0 0 2 4 6 8 10 0 0 4 8 12 16 20 Gate-source voltage VGS (V) Gate-source voltage VGS (V) ⎪Yfs⎪ – ID (S) 100 Common source VDS = 10 V 10 Common source Ta = 25°C Pulse test RDS (ON) – ID |Yfs| Pulse test Forward transfer admittance 10 Ta = −55°C Drain-source ON-resistance RDS (ON) (Ω) 100 1 25 1 VGS = 10 V 0.1 0.1 1 10 100 0.1 0.1 1 10 Drain current ID (A) Drain current ID (A) 4 2007-12-18 TPCA8008-H RDS (ON) – Ta 1.6 Common source VGS = 10 V Pulse test 1.2 10 Common source Ta = 25°C Pulse test IDR – VDS (A) Drain-source ON-resistance RDS (ON) (Ω) 0.8 ID = 4 A 2 Drain reverse current IDR 1 10 5 3 0.1 0 −0.2 −0.4 1 −0.6 1 0.4 0 −80 VGS = 0 V −0.8 −1.0 −40 0 40 80 120 160 Ambient temperature Ta (°C) Drain-source voltage VDS (V) Capacitance – VDS 1000 Ciss 4 Vth – Ta Vth (V) Gate threshold voltage (pF) 3 100 Capacitance C Coss 2 10 Common source VGS = 0 V f = 1 MHz Ta = 25°C 1 0.1 1 10 Crss Common source 1 VDS = 10 V ID = 1 m A Pulse test 0 −80 −40 0 40 80 120 160 100 Drain-source voltage VDS (V) Ambient temperature Ta (°C) Dynamic input/output characteristics 300 24 (V) 20 VDS 100 50 VDS = 200 V 100 Common source 8 ID = 4 A VGS Ta = 25°C Pulse test 0 0 5 10 0 15 4 12 VDS 200 16 Drain-source voltage Total gate charge Qg (nC) Gate-source voltage VGS (V) 5 2007-12-18 TPCA8008-H rth – tw 1000 (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Tc=25℃ 100 (1) (2) Transient thermal impedance rth (°C/W) 10 (3) 1 0.1 0.001 Single pulse 0.01 0.1 1 10 100 1000 Pulse width tw (s) PD – Ta 3 (1) (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) (2) 1.5 t = 10s 60 PD – Tc (W) PD Drain power dissipation 120 160 40 20 0 PD Drain power dissipation (W) 2.5 2 1 0.5 0 0 40 80 0 40 80 120 160 Ambient temperature Ta (°C) Case temperature Tc (°C) Safe operating area 100 10 ID max (Pulse) * t =1ms * ID max (Continuous) 10ms * Drain current ID 1 (A) DC Operation Tc = 25°C 0.1 * Single - Pulse Tc = 25°C Curves must be derated linearly with increase in VDSS max 10 100 1000 temperature. 0.01 1 Drain-source voltage VDS (V) 6 2007-12-18 TPCA8008-H RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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