TPCA8010-H

TPCA8010-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACHⅡπ-MOSⅤ) TPCA8010-H High-Speed Switching Applications Switching Regulator Applications DC-DC Converter Applications 6.0±0.3 Unit: mm 0.5±0.1 1.27 8 0.4±0.1 5 0.05 M A • • • • • • • Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 3.7 nC (typ.) 5.0±0.2 0.15±0.05 1 0.95±0.05 4 0.595 A High forward transfer admittance: |Yfs| = 3.9S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 200V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 5.0±0.2 S 1 4 0.6±0.1 4.25±0.2 Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD PD PD EAS IAR Rating 200 200 ±20 5.5 11 45 2.8 Unit 8 V V V A W W 5 0.8±0.1 1, 2, 3 : SOURCE 4 : GATE 5, 6, 7, 8 : DRAIN JEDEC JEITA TOSHIBA ― ― 2-5Q1A Pulsed (Note 1) (Tc=25℃) (t = 10 s) (Note 2a) Drain power dissipation Drain power dissipation Weight: 0.069 g (typ.) Drain power dissipation (t = 10 s) (Note 2b) 1.6 W Circuit Configuration 8 7 6 5 Single-pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Tc=25℃) (Note 4) Channel temperature Storage temperature range 19 5.5 1.5 150 −55 to 150 mJ A mJ °C °C EAR Tch Tstg 1 2 3 3.5±0.2 Absolute Maximum Ratings (Ta = 25°C) 1.1±0.2 0.05 S 0.166±0.05 Low drain-source ON-resistance: RDS (ON) = 0.38Ω (typ.) 4 Note: For Notes 1 to 4, refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Handle with care. 1 2009-12-21 TPCA8010-H Thermal Characteristics Characteristic Thermal resistance, channel to case (Tc=25℃) Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Symbol Rth (ch-c) Max 2.78 Unit °C/W Rth (ch-a) 44.6 °C/W Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Rth (ch-a) 78.1 °C/W Marking (Note 5) TPCA 8010-H * Type Lot No. Note 1: The channel temperature should not exceed 150°C during use. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (a) (b) Note 3: VDD = 50 V, Tch = 25°C (initial), L = 1mH, RG = 25 Ω, IAR = 5.5 A Note 4: Repetitive rating: pulse width limited by max channel temperature Note 5: * Weekly code: (Three digits) Week of manufacture (01 for first week of year, continuing up to 52 or 53) Year of manufacture (The last digit of the calendar year) 2 2009-12-21 TPCA8010-H Electrical Characteristics (Ta = 25°C) Characteristic Gate leakage current Drain cutoff current Symbol IGSS IDSS V (BR) DSS Drain-source breakdown voltage V (BR) DSX Vth RDS (ON) |Yfs| Ciss Crss Coss Rise time Turn-ON time Switching time Fall time tf toff Qg Qgs Qgd Qsw VDD ≈ 160 V, VGS = 10 V, ID = 5.5 A tr ton 4.7 Ω VGS 10 V 0V ID = 2.7 A VOUT RL = 37 Ω VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±16 V, VDS = 0 V VDS = 200 V, VGS = 0 V ID = 10 mA, VGS = 0 V ID = 10 mA, VGS = −5 V ID = 10 mA, VGS = −20 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 2.7 A VDS = 10 V, ID = 2.7 A Min ⎯ ⎯ 200 200 150 2.0 ⎯ 1.8 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Typ. ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 0.38 3.9 600 20 220 8 17 13 Max ±10 100 ⎯ ⎯ ⎯ 4.0 0.45 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ns ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ pF V Ω S V Unit μA μA Gate threshold voltage Drain-source ON-resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance VDD ≈ 100 V Duty ≤ 1%, tw = 10 μs 70 10 7.6 2.4 3.7 Turn-OFF time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain (“miller”) charge Gate switch charge nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristic Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol IDRP VDSF Test Condition ⎯ IDR = 5.5 A, VGS = 0 V Min ⎯ ⎯ Typ. ⎯ ⎯ Max 11 −2.0 Unit A V 3 2009-12-21 TPCA8010-H ID – VDS 5 Common source 10 Ta = 25°C Pulse test 8 6 3 4.8 5.5 5.2 10 Common source Ta = 25°C Pulse test 10 ID – VDS 8 6 5.7 5.5 6 5.2 4 5 4.8 2 VGS = 4 V 4.5 4 (A) ID Drain current 2 4.5 4.3 1 VGS = 4 V 0 0 1 2 3 4 5 Drain current ID (A) 0 5 8 0 2 4 6 8 10 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID – VGS 20 Common source VDS = 10 V Pulse test 5 VDS – VGS Common source Ta = 25°C Pulse test 16 (V) VDS Drain-source voltage 4 ID (A) 12 3 ID = 5.5 A 2 2.7 1 1.4 Drain current 8 25 4 100 Ta = −55°C 0 0 2 4 6 8 10 0 0 4 8 12 16 20 Gate-source voltage VGS (V) Gate-source voltage VGS (V) |Yfs| – ID 100 Common source VDS = 10 V Pulse test 10000 Common source Ta = 25°C VGS = 10 V Pulse test RDS (ON) – ID (S) Forward transfer admittance 10 Ta = −55°C Drain-source ON-resistance RDS (ON) (mΩ) 10 100 |Yfs| 1000 1 100 25 100 0.1 0.1 1 10 0.1 1 10 100 Drain current ID (A) Drain current ID (A) 4 2009-12-21 TPCA8010-H RDS (ON) − Ta 1000 Common source VGS = 10 V Pulse test 2.7 ID = 5.5A 1.4 400 100 Common source Ta = 25°C Pulse test IDR − VDS Drain-source ON-resistance RDS (ON) (mΩ) 800 IDR Drain reverse current (A) 10 600 1 10 200 5 3 1 VGS = 0 V −0.8 −1.2 0 −80 −40 0 40 80 120 160 0.1 0 −0.4 Ambient temperature Ta (°C) Drain-source voltage VDS (V) Capacitance – VDS 1000 4 Vth − Ta Ciss Vth (V) Gate threshold voltage (pF) 3 100 Coss Capacitance C 2 10 Common source VGS = 0 V f = 1 MHz 1 0.1 Ta = 25°C 1 10 100 Crss 1 Common source VDS = 10 V ID = 1mA Pulse test 80 120 160 0 −80 −40 0 40 Drain-source voltage VDS (V) Ambient temperature Ta (°C) Dynamic input/output characteristics 250 Common source 20 ID = 5.5 A Ta = 25°C Pulse test 80V 12 (V) VDS Drain-source voltage 150 VDS 100 40V VDD = 160V VGS 8 50 4 0 0 5 10 0 15 Total gate charge Qg (nC) Gate-source voltage VGS 200 16 (V) 5 2009-12-21 TPCA8010-H rth – tw 1000 (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Tc=25℃ 100 (1) (2) Transient thermal impedance rth (°C/W) 10 (3) 1 0.1 0.001 Single pulse 0.01 0.1 1 10 100 1000 Pulse width tw (s) PD – Ta 3 (1) (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) t =10s 60 PD – Tc (W) 2.5 PD Drain power dissipation (2) 1.5 1 Drain power dissipation 160 2 PD 40 20 0 0.5 0 0 40 80 120 (W) 0 40 80 120 160 Ambient temperature Ta (°C) Case temperature Tc (°C) Safe operating area 100 (A) ID 10 ID max (Pulse) * t =1 ms * ID max (Continuous) DC Operation Tc = 25°C *: Single pulse Tc = 25°C Curves must be derated linearly with increase in temperature. 10 ms * Drain current 1 0.1 1 10 VDSS max 100 1000 Drain-source voltage VDS (V) 6 2009-12-21 TPCA8010-H RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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