TPCA8011-H

TPCA8011-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-speed U-MOSIII) TPCA8011-H High Efficiency DC／DC Converter Applications Notebook PC Applications Portable-Equipment Applications • • • • • • • 6.0±0.3 0.5±0.1 8 1.27 Unit: mm 0.4±0.1 5 0.05 M A 5.0±0.2 Small footprint due to a small and thin package High speed switching Small gate charge: QSW =16 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 2.7 mΩ (typ.) High forward transfer admittance: |Yfs| =120 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 20 V) Enhancement mode: Vth = 0.6 to 1.3 V (VDS = 10 V, ID = 200 μA) 0.15±0.05 1 5.0±0.2 0.95±0.05 4 0.595 A 0.166±0.05 S 1 0.05 S 4 1.1±0.2 0.6±0.1 4.25±0.2 Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD PD PD EAS IAR (Tc=25℃) (Note 4) Channel temperature Storage temperature range EAR Tch Tstg Rating 20 20 ±12 40 120 45 2.8 Unit V V V A W W 8 5 0.8±0.1 1,2,3：SOURCE 5,6,7,8：DRAIN J EDEC J EITA TOSHIBA 4：GATE ― ― 2-5Q1A Pulsed (Note 1) Weight: 0.069 g (typ.) Drain power dissipation (Tc=25℃) Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single-pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy Circuit Configuration 8 7 6 5 1.6 W 208 40 2.0 150 −55 to 150 mJ A mJ °C °C 1 2 3 4 Note: For Notes 1 to 4, refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Handle with care. 1 2006-11-16 3.5±0.2 TPCA8011-H Thermal Characteristics Characteristic Thermal resistance, channel to case (Tc=25℃) Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Symbol Rth (ch-c) Max 2.78 Unit °C/W Rth (ch-a) 44.6 °C/W Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Rth (ch-a) 78.1 °C/W Marking (Note 5) TPCA 8011-H * Type Lot No. Note 1: The channel temperature should not exceed 150°C during use. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (a) (b) Note 3: VDD = 16 V, Tch = 25°C (initial), L = 0.1 mH, RG = 25 Ω , IAR = 40 A Note 4: Repetitive rating: pulse width limited by max channel temperature Note 5: * Weekly code: (Three digits) Week of manufacture (01 for first week of year, continuing up to 52 or 53) Year of manufacture (The last digit of the calendar year) 2 2006-11-16 TPCA8011-H Electrical Characteristics (Ta = 25°C) Characteristic Gate leakage current Drain cutoff current Drain-source breakdown voltage Gate threshold voltage Drain-source ON-resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain (“Miller”) charge Gate switch charge tf toff Qg Qgs1 Qgd QSW VDD ∼ 16 V, VGS = 5 V, ID = 40 A − Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) |Yfs| Ciss Crss Coss tr ton VGS 5 V 0V 4.7 Ω ID = 20A VOUT RL = 0.5Ω VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±10 V, VDS = 0 V VDS = 20 V, VGS = 0 V ID = 10 mA, VGS = 0 V ID = 10 mA, VGS = −12 V VDS = 10 V, ID = 200 μA VGS = 2.5 V, ID = 20 A VGS = 4.5 V, ID = 20 A VDS = 10 V, ID = 20 A Min ⎯ ⎯ 20 8 0.6 ⎯ ⎯ 60 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Typ. ⎯ ⎯ ⎯ ⎯ ⎯ 4.7 2.7 120 2900 430 1300 13 24 22 61 32 7.7 11 16 Max ±10 10 ⎯ ⎯ 1.3 7.5 3.5 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ns ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ nC pF Unit µA µA V V mΩ S VDD ∼ 10 V − Duty < 1%, tw = 10 µs = VDD ∼ 16 V, VGS = 5 V, ID = 40 A − Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristic Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol IDRP VDSF Test Condition ⎯ IDR = 40 A, VGS = 0 V Min ⎯ ⎯ Typ. ⎯ ⎯ Max 120 −1.2 Unit A V 3 2006-11-16 TPCA8011-H ID – VDS 50 10 8 40 6 5 4.5 30 4 2 3.5 3 2.5 2.3 2.2 Common source Ta = 25°C Pulse test 100 3 2.6 10 ID – VDS 2.5 Common source 2.4 Ta = 25°C Pulse test Drain current ID (A) Drain current ID (A) 80 6 60 5 2.1 2.3 2.2 2.1 20 1.9 40 4.5 2 4 1.9 10 VGS = 1.7 V 20 3.5 VGS = 1.7 V 0 0 0.2 0.4 0.6 0.8 1.0 0 0 1 2 3 4 5 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID – VGS 100 0.40 VDS – VGS Common source Drain-source voltage VDS (V) Common source 80 VDS = 10 V Pulse test Ta = 25℃ 0.32 Pulse test Drain current ID (A) 60 0.24 40 25 0.16 ID = 40 A 0.08 20 10 2 4 6 8 10 20 100 Ta = −55°C 0 0 1 2 3 4 0 0 Gate-source voltage VGS (V) Gate-source voltage VGS (V) ⎪Yfs⎪ – ID (S) 1000 Common source 100 Common source Ta = 25°C Pulse test VDS = 10 V Pulse test 100 Ta = −55°C 25 100 RDS (ON) – ID Forward transfer admittance |Yfs| 10 Drain-source ON-resistance RDS (ON) (mΩ) 10 VGS = 2.5 V 1 4.5 0.1 0.1 1 10 100 1 0.1 1 10 100 Drain current ID (A) Drain current ID (A) 4 2006-11-16 TPCA8011-H RDS (ON) – Ta 12 Common source Pulse test 1000 Common source IDR – VDS (A) Ta = 25°C Pulse test 4.5 100 4 3 2.5 Drain-source ON-resistance RDS (ON) (mΩ) 8 ID = 40 A VGS = 2.5 V 4 VGS = 4.5 V 10, 20 A Drain reverse current IDR 10 ID = 10, 20, 40 A 1 0 −80 −40 0 40 80 120 160 1 0 −0.2 −0.4 VGS = 0 V −0.6 −0.8 −1.0 Ambient temperature Ta (°C) Drain-source voltage VDS (V) Capacitance – VDS 10000 2.5 Vth – Ta Common source Gate threshold voltage Vth (V) VDS = 10 V 2.0 ID = 0.2 mA Pulse test (pF) Ciss Capacitance C 1.5 1000 Coss 1.0 Common source VGS = 0 V f = 1 MHz Ta = 25°C 100 0.1 Crss 0.5 1 10 100 0 −80 −40 0 40 80 120 160 Drain-source voltage VDS (V) Ambient temperature Ta (°C) Dynamic input/output characteristics 20 10 VDS 16 8 Drain-source voltage VDS (V) 8 Common source 4 VGS ID = 40 A Ta = 25°C Pulse test 0 0 10 20 30 40 4 2 0 50 Total gate charge Qg (nC) Gate-source voltage 12 6 VGS (V) 5 2006-11-16 TPCA8011-H rth – tw 1000 (1) Device mounted on a glass-epoxy board (a) Transient thermal impedance rth (°C/W) (Note 2a) (2) Device mounted on a glass-epoxy board (b) 100 (Note 2b) (3) Tc = 25 °C (2) (1) 10 (3) 1 Single - Pulse 0.1 0.001 0.01 0.1 1 10 100 1000 Pulse width tw (s) PD – Ta 3.0 (1)Device mounted on a PD – Tc 50 (W) (1) 2.5 (2)Device mounted on a glass-epoxy board(b) (Note 2b) t ＝ 10s (W) Drain power dissipation PD 40 30 20 10 0 glass-epoxy board(a) (Note 2a) Drain power dissipation PD 2.0 (2) 1.5 1.0 0.5 0 0 40 80 120 160 0 40 80 120 160 Ambient temperature Ta (°C) Case temperature Tc (°C) Safe operating area 1000 ID max (Pulse)* Drain current ID (A) 100 t = 1 ms * ID max (Continuous) 10 ms * 10 DC operation Tc=25℃ * Single - pulse 1 Ta=25℃ Curves linearly must with be derated in VDSS max 1 10 100 increase temperature. 0.1 0.1 Drain-source voltage VDS (V) 6 2006-11-16 TPCA8011-H 7 2006-11-16