TPCA8014-H_06

TPCA8014-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPCA8014-H High-Efficiency DC／DC Converter Applications Notebook PC Applications Portable Equipment Applications 6.0±0.3 0.5±0.1 8 1.27 5.0±0.2 Unit: mm 0.4±0.1 5 0.05 M A • • • • • • • Small footprint due to a small and thin package High-speed switching Small gate charge: Qsw = 7.4 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 7.1 mΩ (typ.) High forward transfer admittance: |Yfs| = 47 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA) 0.15±0.05 1 5.0±0.2 0.95±0.05 4 0.595 A 0.166±0.05 S 1 0.05 S 4 1.1±0.2 4.25±0.2 Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD PD PD EAS IAR Rating 40 40 ±20 30 90 45 2.8 Unit V V V A W W 8 5 0.8±0.1 1,2,3：SOURCE 5,6,7,8：DRAIN 4：GATE JEDEC JEITA TOSHIBA ― ― 2-5Q1A Pulsed (Note 1) Drain power dissipation (Tc = 25℃) Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single-pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Tc=25℃) (Note 4) Channel temperature Storage temperature range Weight: 0.068 g (typ.) 1.6 W Circuit Configuration 8 7 6 5 84 30 2.7 150 −55 to 150 mJ A mJ °C °C EAR Tch Tstg 1 2 3 Note: For Notes 1 to 5, refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Handle with care. 1 2006-11-17 3.5±0.2 Absolute Maximum Ratings (Ta = 25°C) 0.6±0.1 4 TPCA8014-H Thermal Characteristics Characteristic Thermal resistance, channel to case (Tc=25℃) Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Symbol Rth (ch-c) Max 2.78 Unit °C/W Rth (ch-a) 44.6 °C/W Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Rth (ch-a) 78.1 °C/W Marking (Note 5) TPCA 8014-H * Type Lot No. Note 1: The channel temperature should not exceed 150°C during use. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (a) (b) Note 3: VDD = 24 V, Tch = 25°C (initial), L = 0.1 mH, RG = 25 Ω , IAR = 30 A Note 4: Repetitive rating: pulse width limited by max channel temperature Note 5: * Weekly code: (Three digits) Week of manufacture (01 for first week of year, continuing up to 52 or 53) Year of manufacture (The last digit of the calendar year) 2 2006-11-17 TPCA8014-H Electrical Characteristics (Ta = 25°C) Characteristic Gate leakage current Drain cutoff current Drain-source breakdown voltage Gate threshold voltage Drain-source ON-resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Gate resistance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain (“Miller”) charge Gate switch charge tf toff Qg Qgs1 Qgd QSW VDD ∼ 32 V, VGS = 10 V, ID = 30 A − Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) |Yfs| Ciss Crss Coss Rg tr ton VGS 10 V 0V 4.7 Ω ID = 15 A VOUT RL =1.33Ω VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±16 V, VDS = 0 V VDS = 40 V, VGS = 0 V ID = 10 mA, VGS = 0 V ID = 10 mA, VGS = −20 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 15 A VGS = 4.5 V, ID = 15 A VDS = 10 V, ID = 15 A Min ⎯ ⎯ 40 25 1.1 ⎯ ⎯ 24 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Typ. ⎯ ⎯ ⎯ ⎯ ⎯ 7.1 10.5 47 1365 110 480 1.0 5 11 4 18 22 12 5.1 4.9 7.4 Max ±10 10 ⎯ ⎯ 2.3 9.0 14 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ns ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ nC Ω pF Unit µA µA V V mΩ S VDD ∼ 20 V − Duty < 1%, tw = 10 µs = VDD ∼ 32 V, VGS = 10 V, ID = 30 A − VDD ∼ 32 V, VGS = 5 V, ID = 30 A − Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristic Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol IDRP VDSF Test Condition ⎯ IDR = 30 A, VGS = 0 V Min ⎯ ⎯ Typ. ⎯ ⎯ Max 90 −1.2 Unit A V 3 2006-11-17 TPCA8014-H ID – VDS 20 10 6 16 4 3.2 3 Common source Ta = 25 °C Pulse test 50 10 6 5 4 4.5 3.6 ID – VDS 3.4 Common source Ta = 25 °C Pulse test 3.2 30 3 Drain current ID (A) 4.5 12 2.8 Drain current ID (A) 5 40 8 2.6 4 VGS = 2.2 V 0 0 0.2 0.4 0.6 0.8 1.0 20 2.8 10 VGS = 2.6 V 0 0 1 2 3 4 5 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID – VGS 80 VDS – VGS 1.0 Drain-source voltage VDS (V) Common source VDS = 10 V Pulse test Common source Ta = 25 °C Pulse test Drain current ID (A) 0.8 60 0.6 40 25 0.4 ID = 30 A 0.2 7.5 15 20 100 Ta = −55 °C 0 0 1 2 3 4 5 0 0 2 4 6 8 10 Gate-source voltage VGS (V) Gate-source voltage VGS (V) ⎪Yfs⎪ – ID (S) 100 100 Common source Ta = 25 °C Pulse test RDS (ON) − ID Forward transfer admittance |Yfs| Ta = −55 °C 10 25 100 Drain-source ON-resistance RDS (ON) (mΩ) VGS = 4.5 V 10 10 1 Common source VDS = 10 V 0.1 0.1 Pulse test 1 10 100 Drain current ID (A) 1 0.1 1 10 100 Drain current ID (A) 4 2006-11-17 TPCA8014-H RDS (ON) − Ta 20 IDR – VDS 1000 Common source Ta = 25 °C Pulse test 100 10 5 3 Drain-source ON-resistance RDS (ON) (mΩ) 16 15 12 VGS = 4.5 V 8 30 15 7.5 Drain reverse current IDR ID = 30 A 7.5 (A) 10 Common source Pulse test 1 1 VGS = 0 V 4 10 0 −80 −40 0 40 80 120 160 0.1 0 −0.2 −0.4 −0.6 −0.8 −1.0 Ambient temperature Ta (°C) Drain-source voltage VDS (V) Capacitance – VDS 10000 2.0 Vth – Ta Gate threshold voltage Vth (V) (pF) Ciss 1000 Coss 1.5 Capacitance C 1.0 100 Common source VGS = 0 V f = 1 MHz Ta = 25 °C 10 0.1 Crss 0.5 Common source COMMON SOURCE VDS = 10 V VDS = 10 V ID = 1 mA ID = 1 mA Pulse test PULSE TEST −40 0 40 80 120 160 1 10 100 0 −80 Drain-source voltage VDS (V) Ambient temperature Ta (°C) Dynamic input/output characteristics 50 Common source ID = 30 A Ta = 25 °C Pulse test VDS 30 12 20 Drain-source voltage VDS (V) 40 16 20 24 VDD = 32 V 8 10 VGS 0 0 4 10 20 0 30 Total gate charge Qg (nC) Gate-source voltage VGS (V) 5 2006-11-17 TPCA8014-H rth – tw 1000 (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) 100 (Note 2b) (3) Tc = 25 ℃ 10 (1) (2 ) Transient thermal impedance rth (°C/W) (3) 1 Single-pulse 0.1 0.001 0.01 0.1 1 10 100 1000 Pulse width tw (s) PD – Ta 3.0 PD – Tc 50 Drain power dissipation PD (W) 2.5 (1) 2.0 (2) 1.5 Drain power dissipation PD (1)Device mounted on a glass-epoxy board(a) (Note 2a) (2)Device mounted on a glass-epoxy board(b) (Note 2b) ｔ＝10s (W) 40 30 20 10 0 1.0 0.5 0 0 40 80 120 160 0 40 80 120 160 Ambient temperature Ta (°C) Case temperature TC (°C) Safe operating area 1000 100 ID max (Pulse) * t = 1 ms * Drain current ID (A) ID max (Continuous) 10 DC Operation Tc = 25℃ 10 ms * 1 * Single - pulse Tc = 25℃ Curves must be derated linearly with increase in temperature. 0.1 0.1 1 VDSS max 10 100 Drain-source voltage VDS (V) 6 2006-11-17 TPCA8014-H 7 2006-11-17