TPCA8015-H

TPCA8015-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSIII) TPCA8015-H High-Efficiency DC／DC Converter Applications 0 .5±0.1 8 1.27 0.4±0.1 5 Unit: mm 0.05 M A 6.0±0.3 • • • • • • • Small footprint due to small and thin package High-speed switching Small gate charge: Qsw = 13 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 4.4 mΩ (typ.) High forward transfer admittance: |Yfs| = 60 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA) 5.0±0.2 0.15±0.05 1 5.0±0.2 0.95±0.05 4 0.595 A 0.166±0.05 S 1 0.05 S 4 1.1±0.2 0.6±0.1 4.25±0.2 Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD PD PD EAS IAR Rating 40 40 ±20 35 105 45 2.8 Unit V V V A W W 8 5 1,2,3：SOURCE 5,6,7,8：DRAIN 0.8±0.1 JEDEC JEITA TOSHIBA ― ― 2-5Q1A Pulsed (Note 1) Drain power dissipation (Tc = 25℃) Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single-pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Tc=25℃) (Note 4) Channel temperature Storage temperature range Weight: 0.067 g (typ.) 1.6 W Circuit Configuration 8 7 6 5 114 35 2.7 150 −55 to 150 mJ A mJ °C °C EAR Tch Tstg 1 2 3 3.5±0.2 Maximum Ratings (Ta = 25°C) 4：GATE 4 Note: For Notes 1 to 5, refer to the next page. This transistor is an electrostatic-sensitive device. Handle with care. 1 2006-01-17 TPCA8015-H Thermal Characteristics Characteristic Thermal resistance, channel to case (Tc=25℃) Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Symbol Rth (ch-c) Max 2.78 Unit °C/W Rth (ch-a) 44.6 °C/W Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Rth (ch-a) 78.1 °C/W Marking (Note 5) TPCA 8015-H ※ Type Lot No. Note 1: The channel temperature should not exceed 150°C during use. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (a) (b) Note 3: VDD = 24 V, Tch = 25°C (initial), L = 0.1 mH, RG = 25 Ω , IAR = 35 A Note 4: Repetitive rating: pulse width limited by max channel temperature Note 5: * Weekly code: (Three digits) Week of manufacture (01 for the first week of the year, continuing up to 52 or 53) Year of manufacture (The last digit of the calendar year) 2 2006-01-17 TPCA8015-H Electrical Characteristics (Ta = 25°C) Characteristic Gate leakage current Drain cutoff current Drain-source breakdown voltage Gate threshold voltage Drain-source ON-resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Gate resistance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain (“Miller”) charge Gate switch charge tf toff Qg Qgs1 Qgd QSW VDD ∼ 32 V, VGS = 10 V, ID = 35 A − Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) |Yfs| Ciss Crss Coss Rg tr ton VGS 10 V 0V 4.7 Ω ID = 17.5A VOUT RL =1.11Ω VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±16 V, VDS = 0 V VDS = 40 V, VGS = 0 V ID = 10 mA, VGS = 0 V ID = 10 mA, VGS = −20 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 17.5 A VGS = 4.5 V, ID = 17.5 A VDS = 10 V, ID = 17.5 A Min ⎯ ⎯ 40 25 1.1 ⎯ ⎯ 30 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Typ. ⎯ ⎯ ⎯ ⎯ ⎯ 4.4 6.1 60 2155 200 780 1.4 5 12 10 48 37 21 7 9 13 Max ±10 10 ⎯ ⎯ 2.3 5.4 7.9 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ns ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ nC Ω pF Unit µA µA V V mΩ S VDD ∼ 20 V − Duty < 1%, tw = 10 µs = VDD ∼ 32 V, VGS = 10 V, ID = 35 A − VDD ∼ 32 V, VGS = 5 V, ID = 35 A − Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristic Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol IDRP VDSF Test Condition ⎯ IDR = 35 A, VGS = 0 V Min ⎯ ⎯ Typ. ⎯ ⎯ Max 105 −1.2 Unit A V 3 2006-01-17 TPCA8015-H ID – VDS 50 8 40 6 10 4 4.5 3.6 3.5 3.4 80 100 10 6 4 4.5 ID – VDS 3.8 3.7 Common source Ta = 25°C Pulse test 3.5 60 3.4 Drain current ID (A) 30 3.2 20 Common source Ta = 25°C Pulse test Drain current ID (A) 3 40 3.2 3 20 VGS = 2.8V 10 VGS = 2.8V 0 0 0.2 0.4 0.6 0.8 1 0 0 1 2 3 4 5 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID – VGS 100 VDS – VGS 1 Drain-source voltage VDS (V) Common source VDS = 10 V Pulse test Common source Ta = 25℃ Pulse test 80 0.8 Drain current ID (A) 60 0.6 40 Ta = −55°C 20 100 25 0.4 0.2 ID = 35 A 18 9 0 0 1 2 3 4 5 6 0 0 2 4 6 8 10 Gate-source voltage VGS (V) Gate-source voltage VGS (V) ⎪Yfs⎪ – ID Forward transfer admittance |Yfs| (S) 1000 Common source 100 VDS = 10 V Pulse test 100 Ta = −55°C 25 10 100 Common source Ta = 25°C Pulse test RDS (ON) – ID Drain-source ON-resistance RDS (ON) (mΩ) 10 4.5 1 VGS = 10 V 0.1 0.1 1 10 100 1 0.1 1 10 100 Drain current ID (A) Drain current ID (A) 4 2006-01-17 TPCA8015-H RDS (ON) – Ta 12 ID = 35A 18A 8 9A IDR – VDS 1000 Common source Drain-source ON-resistance RDS (ON) (mΩ) 10 (A) Common source Pulse test Ta = 25°C Pulse test 10 4.5 3 100 1 Drain reverse current IDR VGS = 0 V 10 6 VGS = 4.5 V ID = 9A,18A,35A 4 1 2 VGS = 10 V 0 −80 −40 0 40 80 120 160 0.1 0 −0.2 −0.4 −0.6 −0.8 −1 Ambient temperature Ta (°C) Drain-source voltage VDS (V) Capacitance – VDS 10000 2.5 Vth – Ta (V) (pF) 2 Ciss 1000 Coss Gate threshold voltage Vth Capacitance C 1.5 1 Common source 0.5 V = 10 V DS ID = 1 mA Pulse test 0 −80 −40 100 Crss Common source VGS = 0 V f = 1 MHz Ta = 25°C 10 0.1 1 10 100 0 40 80 120 160 Drain-source voltage VDS (V) Ambient temperature Ta (°C) Dynamic input/output characteristics 40 ID = 35 A 30 VDS Ta = 25°C Pulse test 12 Drain-source voltage VDS 20 VDD = 32 V VGS 8 10 4 0 0 10 20 30 0 40 Total gate charge Qg (nC) Gate-source voltage VGS (V) (V) Common source 16 5 2006-01-17 TPCA8015-H rth – tw rth (°C/W) 1000 (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Tc=25℃ (2) 100 (1) Transient thermal impedance 10 (3) 1 Single - pulse 0.1 0.001 0.01 0.1 1 10 100 1000 Pulse width tw (s) PD – Ta 3 (1) Device mounted on a glass-epoxy board (a) PD – Tc 50 (W) 2.5 (1) (2) Device mounted on a glass-epoxy board (b) (Note 2b) t = 10s Drain power dissipation PD (W) 160 (Note 2a) Drain power dissipation PD 40 2 (2) 1.5 30 20 1 0.5 10 0 0 40 80 120 0 0 40 80 120 160 Ambient temperature Ta (°C) Case temperature Tc (°C) Safe operating area 1000 (A) 100 ID max (Pulsed) * t =1ms * Drain current ID ID max (Continuous) 10 DC Operation Tc = 25°C 1 * Single - pulse Ta = 25°C Curves must be derated linearly with increase in temperature. 0.1 0.1 1 VDSS max 10 10ms * 100 Drain-source voltage VDS (V) 6 2006-01-17 TPCA8015-H 7 2006-01-17