TPCA8016-H(TE12LQM

TPCA8016-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSIII) TPCA8016-H High-Efficiency DC／DC Converter Applications Unit: mm 0.4±0.1 1.27 0.5±0.1 Small footprint due to small and thin package • High-speed switching • Small gate charge: Qsw = 6.6 nC (typ.) • Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.) • High forward transfer admittance: |Yfs| = 40 S (typ.) 5.0±0.2 6.0±0.3 • Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA) 0.6±0.1 Unit Drain-source voltage VDSS 60 V Drain-gate voltage (RGS = 20 kΩ) VDGR 60 V Gate-source voltage VGSS ±20 V (Note 1) ID 25 Pulsed (Note 1) IDP 75 PD 45 W PD 2.8 W PD 1.6 W EAS 45 mJ IAR 25 A EAR 2.7 mJ (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Tc=25℃) (Note 4) 0.05 S 1 Rating Drain power dissipation A 0.166±0.05 S Symbol Drain power dissipation (Tc = 25℃) 0.595 5.0±0.2 Absolute Maximum Ratings (Ta = 25°C) DC 4 1 4.25±0.2 8 1,2,3：SOURCE 5,6,7,8：DRAIN 5 ⎯ JEITA ⎯ TOSHIBA Tch 150 °C Storage temperature range Tstg −55 to 150 °C 0.8±0.1 JEDEC A Channel temperature 1.1±0.2 4 3.5±0.2 • Drain current 0.15±0.05 0.95±0.05 • Characteristic 0.05 M A 5 8 4：GATE 2-5Q1A Weight: 0.068 g (typ.) Circuit Configuration 8 7 6 5 1 2 3 4 Note: For Notes 1to 5, refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Handle with care. 1 2006-11-17 TPCA8016-H Thermal Characteristics Characteristic Thermal resistance, channel to case (Tc=25℃) Symbol Max Unit Rth (ch-c) 2.78 °C/W Rth (ch-a) 44.6 °C/W Rth (ch-a) 78.1 °C/W Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Marking (Note 5) TPCA 8016-H Type ※ Lot No. Note 1: The channel temperature should not exceed 150°C during use. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (a) (b) Note 3: VDD = 24 V, Tch = 25°C (initial), L = 0.1 mH, RG = 25 Ω, IAR = 25 A Note 4: Repetitive rating: pulse width limited by max channel temperature Note 5: * Weekly code: (Three digits) Week of manufacture (01 for the first week of the year, continuing up to 52 or 53) Year of manufacture (The last digit of the year) 2 2006-11-17 TPCA8016-H Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V ⎯ ⎯ ±10 µA Drain cut-OFF current IDSS VDS = 60 V, VGS = 0 V ⎯ ⎯ 10 µA V (BR) DSS ID = 10 mA, VGS = 0 V 60 ⎯ ⎯ V (BR) DSX ID = 10 mA, VGS = −20 V 45 ⎯ ⎯ VDS = 10 V, ID = 1 mA 1.1 ⎯ 2.3 Drain-source breakdown voltage Gate threshold voltage Vth Drain-source ON-resistance RDS (ON) Forward transfer admittance |Yfs| VGS = 10 V, ID = 13 A ⎯ 16 21 VGS = 4.5 V, ID = 13 A ⎯ 20 26 VDS = 10 V, ID = 13 A 20 40 ⎯ Input capacitance Ciss ⎯ 1375 ⎯ Reverse transfer capacitance Crss ⎯ 70 ⎯ Output capacitance Coss ⎯ 340 ⎯ ⎯ 1.0 ⎯ ⎯ 4 ⎯ ⎯ 10 ⎯ ⎯ 3 ⎯ Duty < = 1%, tw = 10 µs ⎯ 19 ⎯ VDD ∼ − 48 V, VGS = 10 V, ID = 25 A ⎯ 22 ⎯ VDD ∼ − 48 V, VGS = 5 V, ID = 25 A ⎯ 12 ⎯ ⎯ 4.6 ⎯ ⎯ 4.2 ⎯ ⎯ 6.6 ⎯ Gate resistance VDS = 10 V, VGS = 0 V, f = 1 MHz Rg tr Turn-on time ton 4.7 Ω Switching time Fall time tf Turn-off time toff Total gate charge (gate-source plus gate-drain) Qg Gate-source charge 1 ID = 13 A VOUT VGS 10 V 0V RL =2.3Ω Rise time VDD ∼ − 30 V Qgs1 Gate-drain (“Miller”) charge Qgd Gate switch charge QSW VDD ∼ − 48 V, VGS = 10 V, ID = 25 A V V mΩ S pF Ω ns nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristic Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol Test Condition Min Typ. Max Unit IDRP ⎯ ⎯ ⎯ 75 A ⎯ ⎯ −1.2 V VDSF IDR = 25 A, VGS = 0 V 3 2006-11-17 TPCA8016-H ID – VDS 20 10 3.7 3.5 5 4.5 12 4.5 Common source Ta = 25°C Pulse test 4 8 Drain current ID (A) Drain current ID (A) 6 10 Common source Ta = 25°C Pulse test 4 8 16 ID – VDS 50 3.3 8 3.1 40 6 5 3.8 30 3.5 20 3.3 10 4 VGS = 3 V VGS = 2.8 V 0 0 0 0.2 0.4 0.6 0.8 Drain-source voltage VDS 0 1.0 (V) 1 2 4 Drain-source voltage VDS ID – VGS 5 (V) VDS – VGS 1.0 100 Common source Drain-source voltage VDS (V) Common source VDS = 10 V 80 Drain current ID (A) 3 Pulse test 60 40 100 20 25 Ta = 25℃ 0.8 Pulse test ID = 25 A 0.6 0.4 13 0.2 6.3 Ta = −55°C 0 0 2 4 Gate-source voltage 6 0 8 0 VGS (V) 2 4 Gate-source voltage 10 VGS (V) RDS (ON) – ID Common source Common source VDS = 10 V Ta = 25°C Pulse test 100 Ta = −55°C 25 1 0.1 0.1 8 100 Drain-source ON-resistance RDS (ON) (mΩ) Forward transfer admittance |Yfs| (S) ⎪Yfs⎪ – ID 100 10 6 1 10 Pulse test 4.5 V VGS = 10 V 10 1 0.1 100 Drain current ID (A) 1 10 100 Drain current ID (A) 4 2006-11-17 TPCA8016-H RDS (ON) – Ta IDR – VDS 1000 50 (A) Common source 40 25 Drain reverse current IDR Drain-source ON-resistance RDS (ON) (mΩ) Common source Pulse test 13 6.3 30 25 VGS = 4.5 V 13 20 ID = 6.3 A 10 VGS = 10 V Ta = 25°C Pulse test 100 5 10 4.5 10 3 1 VGS = 0 V 1 0 −80 −40 0 40 80 Ambient temperature 120 Ta 0.1 0 160 −0.2 (°C) −0.4 −0.6 −0.8 Drain-source voltage VDS Capacitance – VDS −1.0 (V) Vth – Ta 3 Gate threshold voltage Vth Capacitance C (pF) (V) 10000 Ciss 1000 Coss 100 Crss Common source VGS = 0 V f = 1 MHz Ta = 25°C 10 0.1 1 10 1 Common source VDS = 10V ID = 1mA Pulse test 0 −80 100 Drain-source voltage VDS 2 (V) −40 0 40 Ambient temperature 80 Ta 120 160 (°C) 30 15 Drain-source voltage VDS 20 10 0 0 10 24 VGS VDS = 48 V 10 Total gate charge 0 30 20 Qg 5 Gate-source voltage 40 Common source 25 ID = 25 A Ta = 25°C Pulse test 20 VDS (V) 50 VGS (V) Dynamic input/output characteristics (nC) 5 2006-11-17 TPCA8016-H (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) (2) Device mounted on a glass-epoxy board (b) (Note 2b) 100 (3) Tc = 25°C Transient thermal impedance rth (°C/W) rth – tw 1000 (1) 10 (3) 1 Single - pulse 0.1 0.001 0.01 0.1 1 Pulse width 10 100 PD – Ta (W) (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) t ＝10s (1) 2.5 PD – Tc 50 Drain power dissipation PD Drain power dissipation PD (W) 3 2 (2) 1.5 1 0.5 0 0 1000 tw (s) 40 30 20 10 0 40 80 120 Ambient temperature Ta 0 160 40 80 Case temperature (°C) 120 Tc 160 (°C) Safe operating area 100 Drain current ID (A) ID max (Pulse) * t = 1 ms * ID max (Continuous) 10 ms * 10 DC Operation Tc = 25°C 1 * 0.1 Single - pulse Tc = 25°C Curves must be derated linearly with increase in temperature. VDSS max 0.01 0.1 1 10 100 Drain-source voltage VDS (V) 6 2006-11-17 TPCA8016-H 7 2006-11-17