TPCA8105

TPCA8105 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPCA8105 Notebook PC Applications Portable Equipment Applications 0 .5±0.1 8 1.27 Unit: mm 0.4±0.1 5 0.05 M A • • • • • Small footprint due to compact and slim package 6.0±0.3 High forward transfer admittance :|Yfs| = 14 S (typ.) Low leakage current : IDSS = −10 µA (VDS = −12 V) Enhancement mode : Vth = −0.5 to −1.2 V (VDS = −10 V, ID = −200 µA ) 5.0±0.2 Low drain-source ON resistance : RDS (ON) = 23 mΩ (typ.) 0.15±0.05 1 5.0±0.2 0.95±0.05 4 0.595 A 0.166±0.05 S 1 0.05 S 4 1.1±0.2 0.6±0.1 4.25±0.2 Absolute Maximum Ratings (Ta = 25°C) 8 5 0.8±0.1 Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD PD PD EAS IAR EAR Tch Tstg Rating −12 −12 ±8 −6 −24 20 2.8 1.6 25.1 −6 0.8 150 −55~150 Unit V V V A 1, 2, 3: Source 5, 6, 7, 8: Drain 4: Gate JEDEC JEITA TOSHIBA ⎯ ⎯ 2-5Q1A Drain power dissipation (Tc = 25°C) Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single pulse avalanche energy Avalanche current Repetitive avalanche energy (Tc = 25°C) (Note 4) Channel temperature Storage temperature range (Note 3) Weight: 0.076 g (typ.) W Circuit Configuration 8 7 6 5 mJ A mJ °C °C 1 2 3 3.5±0.2 4 Note: For (Note 1), (Note 2), (Note 3), (Note 4), refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Handle with caution. 1 2006-11-17 TPCA8105 Thermal Characteristics Characteristics Thermal resistance, channel to case (Tc = 25 ℃) Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Symbol Rth (ch-c) Rth (ch-a) Rth (ch-b) Max 6.25 44.6 °C/W 78.1 Unit °C/W Marking (Note 5) TPCA 8105 ※ Type Lot No. Note 1: The channel temperature should not exceed 150°C during use. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (a) (b) Note 3: VDD = −10 V, Tch = 25°C (initial), L = 0.5 mH, RG = 25 Ω , IAR = −6.0 A Note 4: Repetitive rating: pulse width limited by maximum channel temperature. Note 5: ※ W eekly code: (Three digits) Week of manufacture (01 for first week of a year, continues up to 52 or 53) Year of manufacture (The last digit of the calendar year) 2 2006-11-17 TPCA8105 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth Test Condition VGS = ±8 V, VDS = 0 V VDS = −12 V, VGS = 0 V ID = −10 mA, VGS = 0 V ID = −10 mA, VGS = 8 V VDS = −10 V, ID = −200 µA VGS = −1.8 V, ID = −1.5 A Drain-source ON resistance RDS (ON) VGS = −2.5 V, ID = −3.0 A VGS = −4.5 V, ID = −3.0 A Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time |Yfs| Ciss Crss Coss tr ton tf toff Qg Qgs Qgd VGS 0V −5 V 4.7 Ω ID = −3.0A Output RL = 2 Ω VDS = −10 V, VGS = 0 V, f = 1 MHz VDS = −10 V, ID = −3.0 A Min ⎯ ⎯ −12 −4 −0.5 ⎯ ⎯ ⎯ 7 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Typ. ⎯ ⎯ ⎯ ⎯ ⎯ 65 36 23 14 1600 260 335 7 Max ±10 −10 ⎯ ⎯ −1.2 92 51 33 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ns 21 ⎯ ⎯ ⎯ ⎯ ⎯ nC pF S mΩ Unit µA µA V V Turn-on time Switching time Fall time 13 VDD ∼ −6 V − Duty < 1%, tw = 10 µs = Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain (“Miller”) charge 68 18 14.5 3.5 VDD ≈ −10 V, VGS = −5 V ID = −6 A Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol IDRP VDSF Test Condition ⎯ IDR = −6 A, VGS = 0 V Min ⎯ ⎯ Typ. ⎯ ⎯ Max −24 1.2 Unit A V 3 2006-11-17 TPCA8105 ID – VDS −5 −5 −4.5 −4 −3 −2.5 −1.9 −1.8 −2 −1.7 −10 ID – VDS −2.5 −2 Common source Ta = 25°C Pulse test −3 −4 −5 −6 −1.7 −4 Drain current ID (A) Drain current ID (A) −4 −3 −1.6 −8 −1.9 −1.8 −2 −1.5 −1.6 −1.5 VGS = −1.4 V −1 VGS = −1.4 V Common source Ta = 25°C Pulse test −0.2 −0.4 −0.6 −0.8 −1.0 −2 0 0 0 0 −1 −2 −3 −4 −5 Drain−source voltage VDS (V) Drain−source voltage VDS (V) ID – VGS −10 Common source VDS = −10 V Pulse test −0.5 VDS – VGS Common source Ta = 25°C Pulse test Drain current ID (A) −4 Drain−source voltage −6 VDS Ta = 25°C Ta = −55°C Ta = 100°C −8 (V) −0.4 −0.3 −0.2 ID = −6 A −0.1 −3 A −1.5 A −2 −4 −6 −8 −10 −2 0 0 −0.5 −1.0 −1.5 −2.0 −2.5 0 0 Gate−source voltage VGS (V) Gate−source voltage VGS (V) |Yfs| – ID 100 Common source VDS = −10 V Pulse test Ta = 25°C 10 Ta = 100°C Ta = −55°C 1000 Common source Ta = 25°C Pulse test RDS (ON) – ID Forward transfer admittance ⎪Yfs⎪ (S) Drain−source ON resistance RDS (ON) (mΩ) 100 −1.8 V −2.5 V VGS = −4.5 V 10 1 0.1 −0.1 −1 −10 −100 1 −0.1 −1 −10 −100 Drain current ID (A) Drain currrent ID (A) 4 2006-11-17 TPCA8105 160 Common source RDS (ON) – Tc −100 Pulse test IDR – VDS Common source Ta = 25°C Pulse test Drain−source ON resistance RDS (ON) (m Ω) Drain reverse current IDR 120 (A) −4.5 −2.5 −1.8 −1 VGS = 0 V 80 VGS = −1.8 V ID = −1.5 A 40 −2.5 V −4.5 V 0 −80 −40 0 40 ID = −2.5 A −6 A ID = −1.5 A −2.5 A −10 ID = −1.5, −2.5, −6 A 80 120 160 −1 0 0.4 0.8 1.2 1.6 2.0 Case temperature Tc (°C) Drain−source voltage VDS (V) Capacitance – VDS 10000 VGS = 0 V f = 1 MHz Ciss −2.0 Vth – Ta Common source VDS = −10 V ID = −200 µA Pulse test Gate threshold voltage Vth (V) Ta = 25°C (pF) 1000 Coss Crss 100 −1.5 Capacitance C −1.0 −0.5 10 −0.1 −1 −10 −100 0 −80 −40 0 40 80 120 160 Drain−source voltage VDS (V) Case temperature Tc (°C) Dynamic input/output characteristics −20 Common source ID = −6 A Ta = 25°C Pulse test −12 VGS VDS −4 −2.5 V VDD = −10 V −5 V −4 −12 −20 (V) Drain−source voltage VDS −16 −16 −8 −8 0 0 8 16 24 32 0 40 Total gate charge Qg (nC) Gate-source voltage VGS (V) 5 2006-11-17 TPCA8105 rth – tw 1000 rth (℃/W) (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Tc=25℃ (2) (1) 100 Transient thermal impedance 10 (3) 1 0.1 0.001 SINGLE PULSE 0.01 0.1 1 10 100 1000 Pulse width tw (s) 3.0 PD – Ta (1) PD – Tc 25 Drain power dissipation PD (W) 2.5 Drain power dissipation PD (W) (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) t = 10s 20 2.0 (2) 1.5 15 10 1.0 0.5 5 0 0 40 80 120 160 0 0 40 80 120 160 Ambient temperature Ta (°C) Case temperature Tc(°C) Safe operating area 100 ID max (Pulsed) * t=1ms 10ms (A) 10 ID max (Continuous) * DC OPEATION Drain current ID 1 * Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. 0.1 0.1 1 10 100 Drain−source voltage VDS (V) 6 2006-11-17 TPCA8105 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 030619EAA • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 7 2006-11-17