TPCF8102(TE85L,F,M

TPCF8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPCF8102 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 24 mΩ (typ.) • High forward transfer admittance: |Yfs| = 14 S (typ.) • Low leakage current: IDSS = −10 µA (max) (VDS = −20 V) • Enhancement mode: Vth = −0.5 to −1.2 V (VDS = −10 V, ID = −200 µA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS −20 V Drain-gate voltage (RGS = 20 kΩ) VDGR −20 V Gate-source voltage VGSS ±8 V ID −6 Pulsed (Note 1) IDP −24 Drain power dissipation (t = 5 s) (Note 2a) PD 2.5 Drain power dissipation (t = 5 s) (Note 2b) PD 0.7 W TOSHIBA Single pulse avalanche energy (Note 3) EAS 5.9 mJ Weight: 0.011 g (typ.) Avalanche current IAR −3 A DC Drain current (Note 1) A W EAR 0.25 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C Repetitive avalanche energy (Note 4) JEDEC ― JEITA ― 2-3U1A Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Circuit Configuration Characteristics Symbol Max Unit Thermal resistance, channel to ambient (t = 5 s) (Note 2a) Rth (ch-a) 50.0 °C/W Thermal resistance, channel to ambient (t = 5 s) (Note 2b) Rth (ch-a) 178.6 °C/W Note: (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5): See the next page. 8 7 6 5 1 2 3 4 This transistor is an electrostatic-sensitive device. Please handle with caution. 1 2006-11-16 TPCF8102 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±8 V, VDS = 0 V ⎯ ⎯ ±10 µA Drain cut-off current IDSS VDS = −20 V, VGS = 0 V ⎯ ⎯ −10 µA V (BR) DSS ID = −10 mA, VGS = 0 V −20 ⎯ ⎯ V (BR) DSX ID = −10 mA, VGS = 8 V −12 ⎯ ⎯ Vth VDS = −10 V, ID = −200 µA −0.5 ⎯ −1.2 RDS (ON) VGS = −1.8 V, ID = −1.5 A ⎯ 67 90 RDS (ON) VGS = −2.5 V, ID = −3.0 A ⎯ 36 41 RDS (ON) VGS = −4.5 V, ID = −3.0 A ⎯ 24 30 Forward transfer admittance |Yfs| VDS = −10 V, ID = −3.0 A Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss Gate threshold voltage Drain-source ON resistance Rise time VDS = −10 V, VGS = 0 V, f = 1 MHz tr VGS Turn-on time ton Fall time tf Turn-off time toff Total gate charge (gate-source plus gate-drain) Qg Gate-source charge Qgs Gate-drain (“miller”) charge Qgd −5 V 4.7 Ω Switching time ID = −3.0 A VOUT 0V RL = 3.33 Ω Drain-source breakdown voltage VDD ∼ − −10 V Duty < = 1%, tw = 10 µs VDD ∼ − −16 V, VGS = −5 V, ID = −6.0 A 7 14 ⎯ ⎯ 1550 ⎯ ⎯ 215 ⎯ ⎯ 265 ⎯ ⎯ 7 ⎯ ⎯ 13 ⎯ ⎯ 21 ⎯ ⎯ 68 ⎯ ⎯ 19 ⎯ ⎯ 14 ⎯ ⎯ 5 ⎯ V V mΩ S pF ns nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Drain reverse current Pulse (Note 1) Forward voltage (diode) Symbol Test Condition Min Typ. Max Unit IDRP ⎯ ⎯ ⎯ −24 A VDSF IDR = −6.0 A, VGS = 0 V ⎯ ⎯ 1.2 V 2 2006-11-16 TPCF8102 Marking (Note 5) Lot code (month) Part No. (or abbreviation code) Pin #1 Lot No. F3B Product-specific code Lot code (year) A line indicates lead (Pb)-free package or lead (Pb)-free finish. Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 Unit: (mm) FR-4 25.4 × 25.4 × 0.8 Unit: (mm) (a) (b) Note 3: VDD = −16 V, Tch = 25°C (initial), L = 0.5 mH, RG = 25 Ω, IAR = −3.0 A Note 4: Repetitive rating: pulse width limited by maximum channel temperature Note 5: A dot on the lower left of the marking indicates Pin 1. 3 2006-11-16 TPCF8102 ID – VDS −5 −2.5 −1.9 (A) −4 −2 ID −1.6 −1.5 VGS = −1.4 V −1 −0.4 −0.6 Drain-source voltage −0.8 −1.9 −5 −1.8 −6 −1.7 −4 −1.6 −1.5 −2 VGS = −1.4 V Common source Ta = 25°C Pulse test −0.2 Common source Ta = 25°C Pulse test −2 −3 −4 −8 −3 −3 0 0 −2.5 −1.7 Drain current ID Drain current −1.8 −2 −4.5 (A) −4 −5 ID – VDS −10 0 0 −1.0 −1 VDS (V) −2 VDS – VGS (V) VDS = −10 V Pulse test Common source Ta = 25°C Pulse test −0.4 −4 Drain-source voltage Drain current VDS (A) ID −6 Ta = 25°C Ta = −55°C −2 Ta = 100°C 0 0 −0.5 −1.0 −1.5 Gate-source voltage −2.0 VGS −0.3 −0.2 ID = −6 A −0.1 −3 A −1.5 A 0 0 −2.5 −2 (V) −4 Common source (S) Drain-source on resistance RDS (ON) (mΩ) |Yfs| 10 Ta = 100°C 1 −1 Drain current VGS −10 (V) Common source Ta = 25°C Pulse test Ta = −55°C Ta = 25°C 0.1 −0.1 −8 RDS (ON) – ID 1000 VDS = −10 V Pulse test −6 Gate-source voltage |Yfs| – ID 100 Forward transfer admittance −5 VDS (V) −0.5 Common source −8 −4 Drain-source voltage ID – VGS −10 −3 −10 −2.5 V VGS = −4.5 V 10 1 −0.1 −100 ID (A) −1.8 V 100 −1 Drain current 4 −10 −100 ID (A) 2006-11-16 TPCF8102 RDS (ON) – Ta IDR – VDS −100 160 Common source Common source Drain reverse current IDR (A) 120 −2.5 A VGS = −1.8 V −6 A ID = −1.5 A ID = −1.5, −2.5 A −2.5 V 40 −10 −2.0 V −4 V −1.8 V −1 V ID = −1.5, −2.5, −6 A −4.5 V 0 −80 Pulse test −40 0 40 Ambient temperature 80 120 Ta VGS = 0 V −1 0 160 0.4 (°C) 0.8 Drain-source voltage Capacitance – VDS 10000 Vth (V) Gate threshold voltage 1000 Capacitance C (pF) Ciss Coss Crss 1.0 10 Drain-source voltage 1.5 0.5 80 (°C) Common source (V) −16 Ta = 25°C VDS (2) t = 5 s (2) DC 80 120 Ta −20 −12 (°C) −12 VGS −8 −8 −4 V VDD = −16 V −4 0 0 160 −16 Pulse test VDS 1 Ambient temperature 160 ID = −6 A (1) DC 40 Ta 120 Dynamic input/output characteristics −20 1.5 0 0 40 VDS (V) 2 0.5 0 Ambient temperature (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) (1) t = 5 s −40 100 Drain-source voltage (W) PD Drain power dissipation 2.5 VDS (V) 1.0 PD – Ta 3 2 Common source VDS = −10 V ID = −200 µA Pulse test 0 −80 10 0.1 1.6 Vth – Ta 2.0 VGS = 0 V f = 1 MHz Ta = 25°C 100 1.2 −4 −8 V 8 16 24 32 VGS (V) 80 Ta = 25°C Gate-source voltage Drain-source on resistance RDS (ON) (mΩ) Pulse test 0 40 Total gate charge Qg (nC) 5 2006-11-16 TPCF8102 rth – tw 1000 100 Transient thermal impedance rth (°C/W) Device mounted on a glass-epoxy board (b) (Note 2b) Device mounted on a glass-epoxy board (a) (Note 2a) 10 1 0.1 1m 10 m 100 m 1 Pulse width 10 tw 100 1000 (s) Safe operating area −100 1 ms* −10 Drain current ID (A) ID max (pulsed)* 10 ms* −1 *: Single pulse Ta = 25°C Curves must be derated linearly with increase in temperature −0.1 −0.1 VDSS max −1 Drain-source voltage −10 −100 VDS (V) 6 2006-11-16 TPCF8102 RESTRICTIONS ON PRODUCT USE 030619EAA • The information contained herein is subject to change without notice. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 7 2006-11-16