TPCF8103

TPCF8103 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPCF8103 Notebook PC Applications Portable Equipment Applications • • • • Low drain-source ON resistance: RDS (ON) = 72 mΩ (typ.) High forward transfer admittance: |Yfs| = 4.7S (typ.) Low leakage current: IDSS = -10 μA (max) (VDS = -20 V) Enhancement-model: Vth = -0.5 to -1.2 V (VDS = -10 V, ID = -200μA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) (t = 5 s) (Note 2a) (t = 5 s) (Note 2b) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR (Note 4) EAR Tch Tstg Rating -20 -20 ±8 -2.7 -10.8 2.5 0.7 1.2 -1.35 0.25 150 -55~150 Unit V V V A W W mJ A mJ °C °C 1 2 3 4 JEDEC JEITA TOSHIBA ― ― 2-3U1A Weight: 0.011 g (typ.) Drain power dissipation Drain power dissipation Circuit Configuration 8 7 6 5 Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy Channel temperature Storage temperature range Note: For (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5), please refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic sensitive device. Please handle with caution. 1 2006-11-16 TPCF8103 Thermal Characteristics Characteristics Thermal resistance, channel to ambient (t = 5 s) (Note 2a) Thermal resistance, channel to ambient (t = 5 s) (Note 2b) Symbol Rth (ch-a) Rth (ch-a) Max 50.0 178.6 Unit °C/W °C/W Marking (Note 5) Lot code (month) Lot No. (weekly code) Part No. (or abbreviation code) F3C Product-specific code Lot code (year) A line indicates lead (Pb)-free package or lead (Pb)-free finish. Pin #1 Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (a) (b) Note 3: VDD = -16 V, Tch = 25°C (initial), L = 0.5 mH, RG = 25 Ω, IAR = -1.35 A Note 4: Repetitive rating: pulse width limited by maximum channel temperature. Note 5: Black round marking “●” locates on the left lower side of parts number “F3C” indicates terminal No.1. 2 2006-11-16 TPCF8103 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth Test Condition VGS = ±8 V, VDS = 0 V VDS = -20 V, VGS = 0 V ID = -10 mA, VGS = 0 V ID = -10 mA, VGS = 8 V VDS = -10 V, ID = -200μA VGS = -1.8V, ID = -0.7 A Drain-source ON resistance RDS (ON) VGS = -2.5 V, ID = -1.4 A VGS = -4.5 V, ID = -1.4A Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain (“miller”) charge tf toff Qg Qgs Qgd |Yfs| Ciss Crss Coss tr ton 0V ID = -1.4 A RL = 7.14 Ω VOUT VDS = -10 V, VGS = 0 V, f = 1 MHz VDS = -10 V, ID = -1.4 A Min ⎯ ⎯ -30 -12 -0.5 ⎯ ⎯ ⎯ 2.4 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ VDD ∼ -16 V, VGS = -5 V, − ID = -2.7 A ⎯ ⎯ Typ. ⎯ ⎯ ⎯ ⎯ ⎯ 215 110 72 4.7 470 70 80 5 9 8 26 6 4 2 Max ±10 -10 ⎯ ⎯ -1.2 300 160 110 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ns ⎯ ⎯ ⎯ ⎯ ⎯ nC pF S mΩ Unit μA μA V V VGS -5 V 4.7 Ω Duty < 1%, tw = 10 μs = Test Condition ⎯ VDD ∼ -10 V − Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Drain reverse current Pulse (Note 1) Symbol IDRP VDSF Min ⎯ ⎯ Typ. ⎯ ⎯ Max -10.8 1.2 Unit A V Forward voltage (diode) IDR = -2.7A, VGS = 0 V 3 2006-11-16 TPCF8103 ID – VDS −5 −4 −4.5 −4 −2.5 −2.8 −3.5 −3 −2 −8 −1.8 −10 −4.5 −5 −2.8 ID – VDS −2.5 −3 −3.5 −6 −4 Common source Ta = 25°C Pulse test −2 −1.8 Drain current ID (A) −2 VGS = −1.5 V −1 Common source Ta = 25°C Pulse test −0.2 −0.4 −0.6 −0.8 −1.0 Drain current ID (A) −4 −2 −5 −3 VGS = −1.5 V 0 0 0 0 −1 −2 −3 −4 −5 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID – VGS −5 Common source VDS = −10 V Pulse test −1.0 VDS – VGS Common source Ta = 25°C Pulse test −4 (V) VDS Ta = 25°C −0.8 (A) −3 Drain current ID −2 Drain-source voltage −0.6 −0.4 −1 Ta = −55°C Ta = 100°C −0.2 ID = −2.7 A −1.4 A 0 0 −0.5 −1.0 −1.5 −2.0 −2.5 0 0 −0.7 A −2 −4 −6 −8 Gate-source voltage VGS (V) Gate-source voltage VGS (V) |Yfs| – ID 100 Common source VDS = −10 V Pulse test 1000 Common source Ta = 25°C Pulse test RDS (ON) – ID |Yfs| (S) Drain-source ON resistance RDS (ON) (mΩ) −1.8 V −2.5 V 100 VGS = −4.5 V Forward transfer admittance 10 Ta = 25°C Ta = −55°C Ta = 100°C 1 −0.1 −1 −10 10 −0.1 −1 −10 Drain current ID (A) Drain current ID (A) 4 2006-11-16 TPCF8103 RDS (ON) – Ta 300 Common source Pulse test 250 −100 ID = −1.4 A −0.7 A VGS = −1.8 V 200 ID = −1.4 A 150 ID = −2.7 A −0.7 A Common source Ta = 25°C Pulse test IDR – VDS Drain-source ON resistance RDS (ON) (mΩ) Drain reverse current IDR (A) −10 −2.5 −4.5 100 −2.5 V ID = −0.7, −1.4, −2.7 A −1.8 −1 VGS = 0 V 50 −4.5 V 0 −80 −40 0 40 80 120 160 −1 0 0.4 0.8 1.2 1.6 2.0 Ambient temperature Ta (°C) Drain-source voltage VDS (V) Capacitance – VDS 10000 Common source VGS = 0 V f = 1 MHz Ta = 25°C −2.0 Common source VDS = −10 V ID = −200 μA Pulse test Vth – Ta (V) Ciss (pF) Gate threshold voltage 1000 Capacitance C Vth 100 Coss Crss −1.5 −1.0 −0.5 −0.0 −80 10 −0.1 −1 −10 −100 −40 0 40 80 120 160 Ambient temperature Ta (°C) Drain-source voltage VDS (V) PD – Ta 3 (1) t = 5 s (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) −20 Dynamic input/output characteristics −10 Drain power dissipation PD (W) (V) −16 −4 V VDS −12 VGS −8 2 Drain-source voltage 1.5 (1) DC 1 (2) t = 5 s 0.5 (2) DC −8 Common source ID = −2.7 A Ta = 25°C Pulse test −4 −4 −2 0 0 40 80 120 160 0 0 −2 −4 −6 −8 0 −10 Ambient temperature Ta (°C) Total gate charge Qg (nC) 5 2006-11-16 Gate-source voltage VDD = −16 V −6 VGS (V) 2.5 −8 V VDS TPCF8103 rth – tw 1000 Device mounted on a glass-epoxy board (b) (Note 2b) Transient thermal impedance rth (°C/W) 100 Device mounted on a glass-epoxy board (a) (Note 2a) 10 1 1m 10m 100m 1 10 100 1000 Pulse width tw (s) Safe operating area -100 (A) -10 ID max (pulse)* 1 ms* 10 ms* Drain current ID -1 *: Single pulse Ta = 25°C Curves must be derated linearly with increase in temperature -0.1 -0.1 -1 VDSS max -10 -100 Drain-source voltage VDS (V) 6 2006-11-16 TPCF8103 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 2006-11-16