TPCF8A01

TPCF8A01 TOSHIBA Multi-Chip Device Silicon N Channel MOS Type (U-MOS III) / Schottky Barrier Diode TPCF8A01 Notebook PC Applications Portable Equipment Applications • • • • • Low drain-source ON resistance: RDS (ON) = 38 mΩ (typ.) High forward transfer admittance: |Yfs| = 5.4 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 20 V) Enhancement mode: Vth = 0.5 to 1.2 V (VDS = 10 V, ID = 200 µA) Low forward voltage: VFM(2) = 0.46V(typ.) Unit: mm Absolute Maximum Ratings MOSFET (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) (Note 4) Symbol VDSS VDGR VGSS ID IDP EAS IAR EAR Rating 20 20 ±12 3 12 1.46 1.5 0.11 Unit V V V A mJ A mJ Single pulse avalanche energy Avalanche current JEDEC JEITA TOSHIBA ― ― 2-3U1C Repetitive avalanche energy Single-device value at dual operation (Note 2a, 3b, 5) SBD (Ta = 25°C) Characteristics Repetitive peak reverse voltage Average forward current (Note 2a, 6) Peak one cycle surge forward current (non-repetitive) Symbol VRRM IF(AV) IFSM Rating 20 1.0 7(50Hz) Unit V A A Weight: 0.011 g (typ.) Circuit Configuration 8 7 6 5 Absolute Maximum Ratings for MOSFET and SBD (Ta = 25°C) Characteristics Single-device operation Drain power (Note 3a) dissipation (t = 5 s) (Note 2a) Single-device value at dual operation (Note 3b) Single-device operation Drain power (Note 3a) dissipation (t = 5 s) (Note 2b) Single-device value at dual operation (Note 3b) Channel temperature Storage temperature range Symbol PD (1) PD (2) PD (1) PD (2) Tch Tstg Rating 1.35 1.12 W 0.53 0.33 150 -55~150 °C °C Unit 1 2 3 4 Note: (Note 1), (Note 2), (Note 3), (Note 4), (Note 5), (Note 6) and (Note 7): See the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2007-01-16 TPCF8A01 Thermal Characteristics for MOSFET and SBD Characteristics Single-device operation Thermal resistance, (Note 3a) channel to ambient (t = 5 s) (Note 2a) Single-device value at dual operation (Note 3b) Single-device operation Thermal resistance, (Note 3a) channel to ambient (t = 5 s) (Note 2b) Single-device value at dual operation (Note 3b) Symbol Rth (ch-a) (1) Rth (ch-a) (2) Rth (ch-a) (1) Rth (ch-a) (2) Max 92.6 °C/W 111.6 235.8 °C/W 378.8 Unit This transistor is an electrostatic-sensitive device. Please handle with caution. Schottky barrier diodes have large-reverse-current-leakage characteristic compared to other rectifier products. This current leakage and improper operating temperature or voltage may cause thermal runaway. Please take forward and reverse loss into consideration during design. Marking (Note 7) Lot code (month) Lot No. Part No. (or abbreviation code) F7A Product-specific code Lot code (year) A line indicates lead (Pb)-free package or lead (Pb)-free finish. Pin #1 Note 1: Ensure that the channel temperature does not exceed 150℃. Note 2: (a) Device mounted on a glass-epoxy board (a) 25.4 (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (unit: mm) FR-4 25.4 × 25.4 × 0.8 (unit: mm) (a) 25.4 (b) Note 3: a) The power dissipation and thermal resistance values are shown for a single device (During single-device operation, power is only applied to one device.). b) The power dissipation and thermal resistance values are shown for a single device (During dual operation, power is evenly applied to both devices.). Note 4: VDD = 16 V, Tch = 25°C (initial), L = 0.5 mH, RG = 25 Ω , IAR = 1.5 A Note 5: Repetitive rating: pulse width limited by maximum channel temperature o Note 6: Rectangular waveform (α=180 ), VR =15V. Note 7: ●on the lower left of the marking indicates Pin 1. 2 2007-01-16 TPCF8A01 Electrical Characteristics (Ta = 25°C) MOSFET Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) Drain-source ON resistance RDS (ON) RDS (ON) Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time |Yfs| Ciss Crss Coss tr ton tf VGS 5V 0V 4.7 Ω ID = 1.5 A RL = 0.67Ω ⎯ ⎯ 7.5 4.4 ⎯ ⎯ ns VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±10 V, VDS = 0 V VDS = 20 V, VGS = 0 V ID = 10 mA, VGS = 0 V ID = 10 mA, VGS = -12 V VDS = 10 V, ID = 200 µA VGS = 2.0 V, ID = 1.5 A VGS = 2.5 V, ID = 1.5 A VGS = 4.5 V, ID = 1.5 A VDS = 10 V, ID = 1.5 A Min ⎯ ⎯ 20 8 0.5 ⎯ ⎯ ⎯ 2.7 ⎯ ⎯ ⎯ ⎯ Typ. ⎯ ⎯ ⎯ ⎯ ⎯ 62 50 38 5.4 590 70 85 3.0 Max ±10 10 ⎯ ⎯ 1.2 100 66 49 ⎯ ⎯ ⎯ ⎯ ⎯ pF S mΩ Unit µA µA V V Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge1 Gate-drain (“miller”) charge toff Qg Qgs1 Qgd VDD ∼ 10 V − Duty < 1%, tw = 10 µs = VDD ∼ 16 V, VGS = 5 V, − ID = 3.0 A ⎯ ⎯ ⎯ ⎯ 26 ⎯ ⎯ ⎯ ⎯ nC 7.5 1.3 2.1 MOSFET Source-Drain Ratings and Characteristics Characteristics Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol IDRP VDSF Test Condition ⎯ IDR = 3.0 A, VGS = 0 V Min ⎯ ⎯ Typ. ⎯ ⎯ Max 12 -1.2 Unit A V SBD Characteristics Peak forward voltage Repetitive peak reverse current Junction capacitance Symbol VFM(1) VFM(2) IRRM Cj Test Condition IFM = 0.7 A IFM = 1.0 A VRRM = 20 V VR = 10 V, f = 1 MHz Min ⎯ ⎯ ⎯ ⎯ Typ. 0.43 0.46 ⎯ 54 Max ⎯ 0.49 50 ⎯ Unit V V A pF 3 2007-01-16 TPCF8A01 MOSFET ID – VDS 5 10 6 4 4 5 2 1.9 Common source Ta = 25°C ID – VDS 10 10 3 2.1 8 1.8 Common source Ta = 25°C Pulse Test 2 6 1.9 4 1.8 1.7 2 1.6 1.5 VGS = 1.4V 1 0 0 1 2 3 4 5 Pulse Test (A) ID 3 1.7 Drain current 2 1.6 1 1.5 VGS = 1.4 V 0 0 0.2 0.4 0.6 0.8 Drain-source voltage VDS (V) Drain current ID (A) Drain-source voltage VDS (V) ID – VGS 10 Common source 8 VDS = -10 V Pulse Test 6 1 VDS – VGS Common source (V) Ta = 25℃ 0.8 Pulse Test ID VDS Drain-source voltage 0.6 0.4 Drain current (A) 4 2 100 Ta = −55°C 25 0.2 0.75 1.5 ID = 3 A 0 0 1 2 3 4 5 0 0 2 4 6 8 10 Gate-source voltage VGS (V) Gate-source voltage VGS (V) ⎪Yfs⎪ – ID 100 Common source VDS = -10 V 1000 Common source Ta = 25°C RDS (ON) – ID Forward transfer admittance ⎪Yfs⎪ (S) Drain-source ON resistance RDS (ON) (mΩ) Pulse Test Pulse Test 100 2.0 Ta = −55°C 10 25 100 2.5 10 VGS = 4.5V 1 0.1 1 10 1 0.1 1 10 Drain current ID (A) Drain current ID (A) 4 2007-01-16 TPCF8A01 RDS (ON) – Ta 120 Common source Pulse Test ID = 1.5A,0.75A ID = 3A 60 VGS = 2.5 V ID = 3A,1.5A,0.75A VGS = 4.5 V ID = 3A,1.5A,0.75A 10 10 VGS = 2.0 V 5 3 2.5 IDR – VDS 2.0 Drain-source ON resistance RDS (ON) (m Ω) 100 80 Drain reverse current IDR (A) VGS = 0 V 1 0.5 0.3 Common source Ta = 25°C Pulse Test 0.1 0 40 20 0 −80 −40 0 40 80 120 160 −0.4 −0.8 −1.2 Ambient temperature Ta (°C) Drain-source voltage VDS (V) Capacitance – VDS 1000 1.2 Vth – Ta Ciss 1 (pF) Gate threshold voltage Vth (V) 0.8 C Capacitance 100 Coss 0.6 Common source VGS = 0 V f = 1 MHz Ta = 25°C 10 0.1 1 3 5 Crss 0.4 Common source VDS = -10 V ID = -200μA Pulse Test 0.2 10 30 50 100 0 −80 −40 0 40 80 120 160 Drain-source voltage VDS (V) Ambient temperature Ta (°C) PD – Ta 2 t=5s 1.6 Device mounted on a glass-epoxy board (a) (Note 2a) (1) Single-device operation (Note 3a) Dynamic input / output characteristics 20 6 (V) Device mounted on a glass-epoxy board (b) (Note 2b) 16 VDS 8 4 Drain power dissipation PD (W) (4) Single-device value at dual operation (Note 3b) Drain-source voltage VGS 8 Common source 4 ID = -3 A Ta = 25°C PULSE TEST 0 0 0 10 2 0.8 (3) 0.4 (4) 0 0 40 80 120 160 2 4 6 8 Ambient temperature Ta (°C) Total gate charge Qg (nC) 5 2007-01-16 Gate-source voltage 1.2 (2) ｔ＝5S VDS 12 VDD = 16 V 4 VGS (1) (3) Single-device operation (Note 3a) (V) (2) Single-device value at dual operation (Note 3b) TPCF8A01 rth – tw 1000 (4) (3) (2) Transient thermal impedance rth (°C/W) 100 (1) 10 Device mounted on a glass-epoxy board (a) (Note 2a) (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b) 1 1m 10 m 100 m 1 10 100 1000 Pulse width tw (s) Safe operating Area 100 (A) ID max (pulse)* 10 1 ms * 10 ms* Drain current ID 1 ※ Single pulse Ta=25℃ Curves must be derated linearly with increase in temperature. 0.1 0.1 VDSS max 10 100 1 Drain-source voltage VDS (V) 6 2007-01-16 TPCF8A01 SBD iF – v F 10 0.8 PF (AV) – IF (AV) Average forward power dissipation PF (AV) (W) (A) 0.7 iF Tj=150℃ 1 DC 0.6 Instantaneous forward current 180° 0.5 0.4 0.3 0.2 0.1 0.0 0° α 360° 125℃ 75℃ 25℃ 0.1 120° α=60° Rectangular waveform Conduction angle: α 0.01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Instantaneous forward voltage vF (V) Average forward current IF (AV) (A) Ta max – IF (AV) Device mounted on a glass-epoxy board (a) (Note 2a) rth– tw 100 (4) (3) (2) (1) 160 Maximum allowable lead temperature Ta max (°C) Rectangular waveform Single-device operation (Note 3a) 140 120 100 80 60 40 20 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0° α 360° I Conduction angle:α Transient thermal impedance rth (°C/W) IF(AV) V R =15V 100 Device mounted on a glass-epoxy board (a)(Note 2a) α=60° 120° 180° DC 10 (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b)(Note 2b) (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b) 1.6 1 1m 10 m 100 1 10 100 1000 Average forward current IF (AV) (A) Pulse width tw (s) Surge forward current (non-repetitive) 10 9 Ta=25℃ f=50Hz 1000 Cj – VR (typ.) f=1MHz Ta=25℃ Peak surge forward current IFSM (A) 8 7 6 5 4 3 2 1 0 1 10 100 Junction capacitance Cj 100 10 1 10 100 Number of cycles (pF) Reverse voltage VR (V) 7 2007-01-16 TPCF8A01 IR – Tj 10 Pulse test (typ.) 0.06 Rectangular waveform 0° 360° PR (AV) – VR (typ.) Average reverse power dissipation PR (AV) (W) (mA) 0.05 VR α DC 300° 240° 180° 120 ° 60 ° 1 IR 0.04 0.1 Conduction angle:α Tj=125℃ Reverse current 0.03 V R=20V 0.01 5V 0.001 10V 0.02 0.01 0.0001 0 20 40 60 80 100 120 140 160 0.00 0 5 10 15 20 J unction temperature Tj (°C) Reverse voltage VR (V) 8 2007-01-16 TPCF8A01 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 030619EAA • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 9 2007-01-16