TPCP8001-H(TE85LFM

TPCM8001-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPCM8001-H High-Efficiency DC／DC Converter Applications Notebook PC Applications 0.5±0.1 Unit: mm Small footprint due to a small and thin package • High-speed switching • Small gate charge: QSW = 6.0 nC (typ.) • Low drain-source ON-resistance: RDS (ON) = 7 mΩ (typ.) • High forward transfer admittance: |Yfs| =36 S (typ.) 0.05 M A 5 0.2＋0 －0.2 0.166±0.05 0.75±0.05 0.05 S S 1 4 2.75±0.2 Absolute Maximum Ratings (Ta = 25°C) 0.8±0.1 8 Characteristic Symbol Rating Unit Drain-source voltage VDSS 30 V Drain-gate voltage (RGS = 20 kΩ) VDGR 30 V Gate-source voltage VGSS ±20 V (Note 1) ID 20 Pulsed (Note 1) IDP 60 PD 30 W PD 2.3 W PD 1.0 W EAS 104 mJ IAR 20 A EAR 1.8 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C DC Drain current Drain power dissipation (Tc=25°C) Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single-pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Tc=25°C) (Note 4) A 2.2±0.2 Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA) 3.5±0.2 0.6±0.1 • • 0.55 4 1 1.05±0.2 • 0.8 8 3.65±0.2 4.65±0.3 Portable-Equipment Applications 0.25±0.05 A 5 1,2,3：SOURCE 5,6,7,8：DRAIN 4：GATE JEDEC ― JEITA ― TOSHIBA 2-4L1A Weight: 0.028 g (typ.) Circuit Configuration 8 7 6 5 1 2 3 4 Note: For Notes 1 to 4, refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Handle with care. 1 2006-11-16 TPCM8001-H Thermal Characteristics Characteristic Thermal resistance, channel to case (Tc=25°C) Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Symbol Max Unit Rth (ch-c) 4.17 °C/W Rth (ch-a) 54.3 °C/W Rth (ch-a) 125 °C/W Marking (Note 5) M8001 H Part No. (or abbreviation code) Lot No. ※ Note 1: The channel temperature should not exceed 150°C during use. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (a) (b) Note 3: VDD = 24 V, Tch = 25°C (initial), L = 0.2 mH, RG = 25 Ω, IAR = 20 A Note 4: Repetitive rating: pulse width limited by max channel temperature Note 5: • on the lower left of the marking indicates Pin 1. * Weekly code: (Three digits) Week of manufacture (01 for the first week of the year, continuing up to 52 or 53) Year of manufacture (The last digit of the calendar year) 2 2006-11-16 TPCM8001-H Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V ⎯ ⎯ ±10 µA Drain cutoff current IDSS VDS = 30 V, VGS = 0 V ⎯ ⎯ 10 µA V (BR) DSS ID = 10 mA, VGS = 0 V 30 ⎯ ⎯ V (BR) DSX ID = 10 mA, VGS = −20 V 15 ⎯ ⎯ VDS = 10 V, ID = 1 mA 1.1 ⎯ 2.3 VGS = 4.5 V, ID = 10 A ⎯ 10 14 VGS = 10 V, ID = 10 A ⎯ 7 9.5 VDS = 10 V, ID = 10 A 18 36 ⎯ ⎯ 1130 ⎯ VDS = 10 V, VGS = 0 V, f = 1 MHz ⎯ 120 ⎯ ⎯ 480 ⎯ ⎯ 2.5 ⎯ ⎯ 9 ⎯ Drain-source breakdown voltage Gate threshold voltage Vth Drain-source ON-resistance RDS (ON) Forward transfer admittance |Yfs| Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss tr Turn-on time ton 4.7 Ω Switching time Fall time toff 3 ⎯ Duty < = 1%, tw = 10 µs ⎯ 19 ⎯ Total gate charge (gate-source plus gate-drain) Qg VDD ∼ − 24 V, VGS = 10 V, ID = 20 A ⎯ 19 ⎯ Gate-source charge 1 Qgs1 Gate-drain (“Miller”) charge Qgd Gate switch charge QSW VDD ∼ − 15 V VDD ∼ − 24 V, VGS = 5 V, ID = 20 A VDD ∼ − 24 V, VGS = 10 V, ID = 20 A V mΩ S pF ns ⎯ tf Turn-off time ID = 10A VOUT VGS 10 V 0V RL = 1.5Ω Rise time V ⎯ 11 ⎯ ⎯ 3.9 ⎯ ⎯ 4.0 ⎯ ⎯ 6.0 ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristic Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol Test Condition Min Typ. Max Unit IDRP ⎯ ⎯ ⎯ 60 A ⎯ ⎯ −1.2 V VDSF IDR = 20 A, VGS = 0 V 3 2006-11-16 TPCM8001-H ID – VDS 4 10 3.8 ID – VDS Common source Ta = 25°C Pulse test 3.6 Drain current ID (A) 8 16 50 6 3.4 5 Drain current ID (A) 20 3.3 12 4.5 3.2 8 3.0 4 4.5 10 8 Common source Ta = 25°C Pulse test 4.2 4 6 40 5 3.8 3.6 30 3.4 20 3.2 10 VGS = 3 V VGS = 2.8 V 0 0 0.2 0.4 0.6 0.8 Drain-source voltage VDS 0 1.0 0 (V) 0.4 0.8 Drain-source voltage VDS (V) Drain current ID (A) 30 20 25 10 Ta = −55°C 100 0 0 1 2 4 3 Gate-source voltage 5 0.3 0.2 ID = 20 A 0.1 5 0 VGS (V) 10 2 4 Gate-source voltage 6 8 10 VGS (V) RDS (ON) − ID 100 Common source Common source VDS = 10 V Pulse test Ta = −55°C Drain-source ON-resistance RDS (ON) (mΩ) (S) Forward transfer admittance |Yfs| Common source Ta = 25°C Pulse test 100 100 25 1 0.1 0.1 (V) 0.4 0 6 ⎪Yfs⎪ − ID 10 2.0 VDS – VGS 0.5 Common source VDS = 10 V Pulse test 40 1.6 Drain-source voltage VDS ID – VGS 50 1.2 1 10 Ta = 25°C Pulse test VGS = 4.5 V 10 10 1 0.1 100 Drain current ID (A) 1 10 100 Drain current ID (A) 4 2006-11-16 TPCM8001-H RDS (ON) − Ta IDR − VDS 100 Common source Pulse test ID = 20 A 10 5 12 VGS = 4.5 V 8 ID = 20, 10, 5 A VGS = 10 V 0 −80 −40 0 40 Ambient temperature 80 120 Ta 10 4.5 1 VGS = 0 V 1 160 3 10 −0.2 0 (°C) −0.4 Capacitance C Gate threshold voltage Vth (V) (pF) 2.5 Ciss 1000 Coss 100 Crss Common source VGS = 0 V f = 1 MHz Ta = 25°C 10 0.1 1 10 1.5 1.0 0.5 −40 0 50 (2) Device mounted on a glass-epoxy 40 board (b) (Note 2b) ｔ＝10s 2.0 1.5 (2) 0.5 40 80 Ambient temperature 120 Ta 160 (°C) 120 Ta Common source ID = 20 A Ta = 25°C Pulse test (V) (1) Device mounted on a glass-epoxy board (a) (Note 2a) Drain-source voltage VDS Drain power dissipation PD (W) 80 Dynamic input/output characteristics 3.0 0 0 40 Ambient temperature (V) PD − Ta (1) −1.0 (V) Common source VDS = 10 V ID = 1 mA Pulse test 2.0 0 −80 100 Drain-source voltage VDS 1.0 −0.8 Vth − Ta Capacitance – VDS 10000 2.5 −0.6 Drain-source voltage VDS 30 (°C) 16 20 8 VDD = 32 V 8 10 4 VGS 8 16 24 Total gate charge Qg 5 16 12 VDS 0 0 160 20 32 VGS (V) 4 Common source Ta = 25°C Pulse test Gate-source voltage 16 Drain reverse current IDR (A) Drain-source ON-resistance RDS (ON) (mΩ) 20 0 40 (nC) 2006-11-16 TPCM8001-H rth − tw 1000 (1) Device mounted on a glass-epoxy board (a) (Note 2a) rth (°C/W) (2) Device mounted on a glass-epoxy board (b) (Note 2b) (2) (3) Tc=25°C (1) Transient thermal impedance 100 10 (3) 1 Single - pulse 0.1 0.001 0.01 0.1 1 Pulse width 10 100 tw (s) Safe operating area PD – Tc 50 ID max (Pulse) * (W) 100 Drain power dissipation PD (A) t =1 ms * 10 ms * ID max (Continuous) Drain current ID 10 DC operation Tc = 25°C 1 * Single - pulse Ta = 25°C Curves must be linearly with increase temperature. 0.1 0.1 1000 derated in 1 10 30 20 10 0 0 VDSS max Drain-source voltage VDS 40 40 80 Case temperature 100 120 TC 160 (°C) (V) 6 2006-11-16 TPCM8001-H 7 2006-11-16