TPCP8001-H

TPCP8001-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII) TPCP8001-H High Efficiency DC／DC Converter Applications Notebook PC Applications Portable Equipment Applications • • • • • • • Small footprint due to a small and thin package High speed switching Small gate charge: QSW = 3.6 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 13 mΩ (typ.) High forward transfer admittance: |Yfs| = 16 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 30V) Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA) S Unit: mm 0.33±0.05 0.05 M A 8 5 2.4±0.1 0.475 1 4 0.65 2.9±0.1 B A 0.05 M B 0.8±0.05 0.025 S 0.17±0.02 0.28 +0.1 -0.11 +0.13 1.12 -0.12 1.12 +0.13 -0.12 Maximum Ratings (Ta = 25°C) 1．Source 5．Drain 6．Drain 7．Drain 8．Drain 0.28 +0.1 -0.11 Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR Rating 30 30 ±20 7.2 28.8 1.68 Unit V V V A 2．Source 3．Source 4．Gate JEDEC JEITA TOSHIBA ― ― 2-3V1K Pulsed (Note 1) (t = 5 s) (Note 2a) (t = 5 s) (Note 2b) Drain power dissipation Weight: 0.017 g (typ.) W Circuit Configuration 8 7 6 5 Drain power dissipation 0.84 W Single-pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Note 2a) (Note 4) Channel temperature Storage temperature range 33.6 7.2 0.066 150 −55 to 150 mJ A mJ °C °C EAR Tch Tstg 1 2 3 4 Note: For Notes 1 to 5, refer to the next page. This transistor is an electrostatic-sensitive device. Handle with care. Marking (Note 5) 8 7 6 5 8001H ※ 1 2 3 4 Lot No. 1 2006-05-29 2.8±0.1 TPCP8001-H Thermal Characteristics Characteristic Thermal resistance, channel to ambient (t = 5 s) (Note 2a) Symbol Rth (ch-a) Max 74.4 Unit °C/W Thermal resistance, channel to ambient (t = 5 s) (Note 2b) Rth (ch-a) 148.8 °C/W Note 1: The channel temperature should not exceed 150°C during use. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (a) (b) Note 3: VDD = 24 V, Tch = 25°C (initial), L = 0.5 mH, RG = 25 Ω, IAR = 7.2A Note 4: Repetitive rating: pulse width limited by max channel temperature Note 5: ● on the lower left of the marking indicates Pin 1. * Weekly code: (Three digits) Week of manufacture (01 for first week of the year, continuing up to 52 or 53) Year of manufacture (The last digit of the calendar year) 2 2006-05-29 TPCP8001-H Electrical Characteristics (Ta = 25°C) Characteristic Gate leakage current Drain cutoff current Drain-source breakdown voltage Gate threshold voltage Drain-source ON-resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain (“Miller”) charge Gate switch charge tf toff Qg Qgs1 Qgd QSW VDD ∼ 24 V, VGS = 10 V, ID = 7.2 A − Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) |Yfs| Ciss Crss Coss tr VGS ton 10 V 0V 4.7 Ω VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±16 V, VDS = 0 V VDS = 30 V, VGS = 0 V ID = 10 mA, VGS = 0 V ID = 10 mA, VGS = −20 V VDS = 10 V, ID = 1 mA VGS = 4.5 V, ID = 3.6 A VGS = 10 V, ID = 3.6 A VDS = 10 V, ID = 3.6 A Min ⎯ ⎯ 30 15 1.1 ⎯ ⎯ 8 ⎯ ⎯ ⎯ ⎯ ID = 3.6 A VOUT RL =4.16Ω ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Typ. ⎯ ⎯ ⎯ ⎯ ⎯ 19 13 16 640 75 300 4 8 4 18 11 6.3 2.2 2.6 3.6 Max ±10 10 ⎯ ⎯ 2.3 25 16 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ns ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ nC pF Unit μA μA V V mΩ S VDD ∼ 15 V − < 1%, tw = 10 μs Duty = VDD ∼ 24 V, VGS = 10 V, ID = 7.2 A − VDD ∼ 24 V, VGS = 5 V, ID = 7.2 A − Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristic Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol IDRP VDSF Test Condition ⎯ IDR = 7.2 A, VGS = 0 V Min ⎯ ⎯ Typ. ⎯ ⎯ Max 28.8 −1.2 Unit A V 3 2006-05-29 TPCP8001-H ID – VDS 8 10 3.4 3.3 3.2 Common source Ta = 25°C Pulse test 16 10 4 ID – VDS 3.5 Common source Ta = 25°C Pulse test 3.4 3.3 3.2 3.1 3.0 4 2.9 VGS = 2.8 V 3.5 (A) 6 (A) 4 3.1 12 5 ID 3.0 Drain current 4 2.9 VGS = 2.8 V Drain current ID 8 2 0 0 0.4 0.8 1.2 1.6 0 0 2 2.4 0.4 0.8 1.2 1.6 2 2.4 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID – VGS 20 VDS – VGS 1 (V) Common source VDS = 10 V Pulse test Common source Ta = 25°C Pulse test 16 0.8 ID Drain-source voltage 12 VDS 0.6 ID = 7.2 A 0.4 3.6 0.2 1.8 8 100°C 25°C 4 Ta = −55°C 0 0 1 2 3 4 5 0 0 Drain current (A) 2 4 6 8 10 Gate-source voltage VGS (V) Gate-source voltage VGS (V) ⎪Yfs⎪ – ID (S) 100 100 Common source VDS = 10 V Pulse test Common source Ta = 25°C Pulse test RDS (ON) – ID |Yfs| Ta = −55°C 25°C 100°C Drain-source ON-resistance RDS (ON) (mΩ) Forward transfer admittance 10 VGS = 4.5 V 10 10 1 0.1 0.1 1 1 10 100 1 10 100 Drain current ID (A) Drain current ID (A) 4 2006-05-29 TPCP8001-H RDS (ON) – Ta 40 IDR – VDS 100 Common source Ta = 25°C Pulse test Drain-source ON-resistance RDS (ON) (mΩ) 35 30 25 20 15 10 5 0 −80 ID = 1.8,3.6,7.2 A IDR (A) Common source Pulse test 10 3 10 4.5 VGS = 4.5 V ID = 1.8,3.6,7.2 A 10 V Drain reverse current 1 VGS = 0 V 1 −40 0 40 80 120 160 0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 Ambient temperature Ta (°C) Drain-source voltage VDS (V) Capacitance – VDS 10000 2.5 Vth – Ta Vth (V) Gate threshold voltage Ciss Coss 2.0 (pF) 1000 Capacitance C 1.5 1.0 Common source VDS = 10 V ID = 1 m A Pulse test −40 0 40 80 120 160 100 Common source VGS = 0 V f = 1 MHz Ta = 25°C 1 10 Crss 0.5 10 0.1 100 0 −80 Drain-source voltage VDS (V) Ambient temperature Ta (°C) PD – Ta 2 (1) (1)Device mounted on a glass-epoxy board (a) (Note 2a) (2)Device mounted on a glass-epoxy board (b) (Note 2b) ｔ＝5s 50 Dynamic input/output characteristics Common source ID = 7.2 A Ta = 25°C 40 Pulse test 20 (W) (V) PD VDS Drain power dissipation Drain-source voltage 1.2 (2) 0.8 VDS 20 24 V 12 V 8 0.4 10 4 0 0 0 50 100 150 200 0 4 8 12 16 20 0 Ambient temperature Ta (°C) Total gate charge Qg (nC) 5 2006-05-29 Gate-source voltage 30 VDD = 6 V 12 VGS 1.6 16 (V) TPCP8001-H rth – tw rth (°C/W) 1000 (1)Device mounted on a glass-epoxy board (a) (Note 2a) (2)Device mounted on a glass-epoxy board (b) (Note 2b) (2) (1) 100 Transient thermal impedance 10 1 Single - pulse 0.1 0.001 0.01 0.1 1 10 100 1000 Pulse width tw (s) Safe operating area 100 ID max (Pulse) * (A) ID 10 10 ms * t =1 ms * Drain current 1 * Single - pulse Ta = 25°C Curves must be derated linearly with increase in temperature. 0.1 0.1 1 VDSS max 10 100 Drain-source voltage VDS (V) 6 2006-05-29 TPCP8001-H RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 2006-05-29