TPCP8002

TPCP8002 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS IV) TPCP8002 Notebook PC Applications Portable Equipment Applications • • • • • • Lead (Pb)-Free Small footprint due to small and thin package Low drain-source ON-resistance : RDS (ON) = 7 mΩ (typ.) High forward transfer admittance :|Yfs| = 36 S (typ.) Low leakage current : IDSS = 10 μA (VDS = 20 V) Enhancement mode : Vth = 0.5 to 1.2 V (VDS = 10 V, ID = 0.2 mA) 0.33±0.05 0.05 M A 8 5 Unit: mm 2.4±0.1 0.475 1 4 0.65 2.9±0.1 B A 0.05 M B 0.8±0.05 S 0.025 S 0.17±0.02 0.28 +0.1 -0.11 +0.13 Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD Rating 20 20 ±12 9.1 36.4 1.68 W Drain power dissipation (t = 5 s) (Note 2b) Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Note 4) Channel temperature Storage temperature range PD EAS IAR EAR Tch Tstg 0.84 21.5 9.1 0.168 150 −55~150 mJ A mJ °C °C 1 2 3 Unit V V V A 1．Source 2．Source 3．Source 4．Gate 5．Drain 6．Drain 7．Drain 8．Drain 1.12 -0.12 1.12 +0.13 -0.12 0.28 +0.1 -0.11 JEDEC JEITA TOSHIBA ― ― 2-3V1K Drain power dissipation (t = 5 s) (Note 2a) Circuit Configuration 8 7 6 5 Note: For Notes 1 to 5, refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 4 Marking (Note 5) 8 7 6 5 8002 * 1 2 3 4 This transistor is an electrostatic-sensitive device. Handle with care. Lot No. 1 2007-01-16 2.8±0.1 TPCP8002 Thermal Characteristics Characteristic Thermal resistance, channel to ambient (t = 5 s) (Note 2a) Thermal resistance, channel to ambient (t = 5 s) (Note 2b) Symbol Rth (ch-a) Max 74.4 Unit °C/W Rth (ch-a) 148.8 °C/W Note 1: The channel temperature should not exceed 150°C during use. Note 2: (a) Device mounted on a glass-epoxy board (a) FR-4 25.4 × 25.4 × 0.8t Unit : (mm) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8t Unit : (mm) (a) (b) Note 3: VDD = 16 V, Tch = 25°C (initial), L = 0.2 mH, RG = 25 Ω, IAR = 9.1 A Note 4: Repetitive rating: pulse width limited by maximum channel temperature. Note 5: ● on the lower left of the marking indicates Pin 1. * Weekly code (3 digits): Week of manufacture (01 for the first week of the year, continuing up to 52 or 53) Year of manufacture (the last digit of the calendar year) 2 2007-01-16 TPCP8002 Electrical Characteristics (Ta = 25°C) Characteristic Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON-resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) |Yfs| Ciss Crss Coss tr VGS Turn-on time Switching time Fall time tf toff Qg Qgs1 Qgd VDD ≈ 16 V, VGS = 5 V, ID = 9.1 A ton 4.7 Ω 5V 0V ID = 4.5 A VOUT RL = 2.22 Ω VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±10 V, VDS = 0 V VDS = 20 V, VGS = 0 V ID = 10 mA, VGS = 0 V ID = 10 mA, VGS = −12 V VDS = 10 V, ID = 0.2 mA VGS = 2.5 V, ID = 4.5 A VGS = 4.5 V, ID = 4.5 A VDS = 10 V, ID = 4.5 A Min ⎯ ⎯ 20 8 0.5 ⎯ ⎯ 18 ⎯ ⎯ ⎯ ⎯ Typ. ⎯ ⎯ ⎯ ⎯ ⎯ 10 7 36 3700 400 450 14 Max ±10 10 ⎯ ⎯ 1.2 13.7 10 ⎯ ⎯ ⎯ ⎯ ⎯ pF Unit μA μA V V mΩ S ⎯ 24 ⎯ ns ⎯ 30 ⎯ VDD ∼ 10 V − Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain (“Miller”) charge Duty < 1%, tw = 10 μs = ⎯ ⎯ ⎯ ⎯ 110 48 8 12 ⎯ ⎯ ⎯ ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristic Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol IDRP VDSF Test Condition ⎯ IDR = 9.1 A, VGS = 0 V Min ⎯ ⎯ Typ. ⎯ ⎯ Max 36.4 −1.2 Unit A V 3 2007-01-16 TPCP8002 ID – VDS 10 2 1.8 1.7 Common source Ta = 25°C Single Pulse test 20 3 2 ID – VDS 1.9 Common source Ta = 25°C Single Pulse test 1.8 12 1.7 8 1.6 4 VGS = 1.4 V 1.5 0 VGS = 1.4 V 0 0.4 0.8 1.2 1.6 2 (A) ID 6 1.6 4 1.5 2 Drain current 0 0 0.2 0.4 0.6 0.8 1.0 Drain−source voltage Drain current ID (A) 8 16 VDS (V) Drain−source voltage VDS (V) ID – VGS 20 VDS – VGS 1 VDS (V) 16 Common source VDS = 10 V Single Pulse test 0.8 Common source Ta = 25°C Single Pulse test (A) Drain current 100°C 8 Drain−source voltage 12 0.6 ID 0.4 ID = 9.1 A 4 25°C Ta = −55°C 0.2 4.5 2.3 0 0 2.4 0 2 4 6 8 10 0 0.4 0.8 1.2 1.6 2 Gate−source voltage VGS (V) Gate−source voltage VGS (V) |Yfs| – ID 100 Common source VDS = 10 V Single Pulse test 100 Ta = −55°C Common source Ta = 25°C Single Pulse test RDS (ON) – ID (S) |Yfs| Forward transfer admittance 100°C Drain−source ON-resistance RDS (ON) (mΩ) 25°C 10 10 VGS = 2.5 V 4.5 1 0.1 1 10 100 1 0.1 1 10 100 Drain current ID (A) Drain current ID (A) 4 2007-01-16 TPCP8002 RDS (ON) – Ta 20 Common source Pulse test 16 ID = 2.3,4.5,9.1 A 100 IDR – VDS Common source Ta = 25°C Pulse test 5 10 3 VGS = −1 V 1 Drain−source ON-resistance RDS (ON) (mΩ) 12 2.5 V 8 ID = 2.3,4.5,9.1 A VGS = 4.5 V Drain reverse current IDR (A) 1 0 4 0 −80 −40 0 40 80 120 160 0.1 0 −0.2 −0.4 −0.6 −0.8 −1 −1.2 Ambient temperature Ta (°C) Drain−source voltage VDS (V) C – VDS 10000 1.2 Vth – Ta Vth (V) Gate threshold voltage Ciss 1.0 (pF) 0.8 C 0.6 Capacitance 1000 0.4 Common source VDS = −10 V ID = −200 μA Pulse test −40 0 40 80 120 160 Coss Common source VGS = 0 V f = 1 MHz Ta = 25°C 1 10 Crss 0.2 0.0 −80 100 100 0.1 Ambient temperature Ta (°C) Drain−source voltage VDS (V) 2.0 PD – Ta (1) Device mounted on a (1) 20 Dynamic input/output characteristics Common source VDS ID = 9.1 A Ta = 25°C Single Pulse test 12 4V 8 VGS 4 2 VDD = 16 V 4 8V 6 8 10 (W) VDS (V) glass-epoxy board (a) (Note 2a) (2) Device mounted on a 1.6 PD Drain power dissipation Drain−source voltage (Note 2b) (2) 0.8 0.4 0 0 50 100 150 200 0 0 20 40 0 60 Ambient temperature Ta (°C) Total gate charge Qg (nC) 5 2007-01-16 Gate−source voltage 1.2 glass-epoxy board (b) VGS 16 (V) TPCP8002 rth(j−c) − tw 1000.0 (°C/W) Device mounted on a glassepoxy board (b) (Note 2b) 100.0 Device mounted on a glassepoxy board (a) (Note 2a) Transient thermal impedance rth 10.0 1.0 0.1 0.001 0.01 0.1 1 10 Single pulse 100 1000 Pulse width Safe operating area 100 ID max (pulse)* 1 ms* 10 10 ms* tw (s) Drain current ID (A) 1 *: Single nonrepetitive pulse Ta = 25°C Curves must be derated linearly with increase in temperature. 0.1 1 0.1 VDSS max 10 100 Drain−source voltage VDS (V) 6 2007-01-16 TPCP8002 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 2007-01-16