TPCP8004(TE85L,F)

TPCP8004 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ) TPCP8004 Notebook PC Applications Unit: mm 0.33 ± 0.05 0.05 • Small footprint due to a small and thin package • High speed switching • Small gate charge: Qg = 26nC (typ.) A M 5 2.4 ± 0.1 8 0.475 • Low drain-source ON-resistance: RDS(ON) = 7mΩ(typ.) • High forward transfer admittance: |Yfs| = 21S (typ.) • Low leakage current: IDSS = 10μA (max) (VDS = 30V) • Enhancement mode: Vth = 1.3 to 2.5V (VDS = 10V, ID = 1mA) 1 4 2.8 ± 0.1 Portable Equipment Applications B 0.65 2.9 ± 0.1 0.05 M B A 0.8 ± 0.05 0.025 S 0.17 ± 0.02 S ＋0.1 0.28 －0.11 ＋0.13 1.12 －0.12 ＋0.13 1.12 －0.12 Absolute Maximum Ratings (Ta=25°C) Characteristics 0.28 ＋0.1 －0.11 Symbol Rating Unit Drain-source voltage VDSS 30 V Drain-gate voltage (RGS=20 kΩ) VDGR 30 V Gate-source voltage VGSS ±20 V (Note 1) ID 8.3 Pulse (Note 1) IDP 33.2 Drain current DC (t = 5 s) Drain power dissipation (Note 2a) (t = 5 s) Drain power dissipation PD 1.68 JEDEC ⎯ JEITA ⎯ TOSHIBA A W 2-3V1K Weight: 0.017g(typ.) Circuit Configuration 8 7 6 5 1 2 3 4 W PD 0.84 Single-pulse avalanche energy (Note 3) EAS 17.9 mJ Avalanche current IAR 8.3 A Repetitive avalanche energy (Note 4) EAR 0.021 mJ (Note 2b) 1,2,3 ：SOURCE 4 ：GATE 5,6,7,8：DRAIN Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Marking (Note 5) 8 7 6 5 Note: For Notes 1 to 5, refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Handle with care. 8004 ※ 1 2 3 4 Lot No. Start of commercial production 2007-07 1 2013-11-01 TPCP8004 Thermal Characteristics Characteristic Symbol Max Unit Thermal resistance, channel to ambient (t = 5 s) (Note 2a) Rth (ch-a) 74.4 °C/W Thermal resistance, channel to ambient (t = 5 s) (Note 2b) Rth (ch-a) 148.8 °C/W Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (a) (b) Note 3: VDD =24V, Tch = 25°C (initial), L =0.2mH, RG = 1 Ω, IAR =8.3 A Note 4: Repetitive rating: pulse width limited by max channel temperature Note 5: ●on the lower left of the marking indicates Pin 1. ※ Weekly code: (Three digits) Week of manufacture (01 for the first week of the year, continuing up to 52 or 53) Year of manufacture (The last digit of the year) 2 2013-11-01 TPCP8004 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±20 V, VDS = 0 V ⎯ ⎯ ±100 nA Drain cutoff current IDSS VDS = 30 V, VGS = 0 V ⎯ ⎯ 10 μA V (BR) DSS ID = 10 mA, VGS = 0 V 30 ⎯ ⎯ V (BR) DSX ID = 10 mA, VGS = −20 V 10 ⎯ ⎯ VDS = 10 V, ID = 1mA 1.3 ⎯ 2.5 VGS = 4.5 V, ID = 4.2A ⎯ 10.5 14 VGS = 10 V, ID = 4.2A ⎯ 7 8.5 VDS = 10 V, ID = 4.2A 10 21 ⎯ ⎯ 1270 ⎯ ⎯ 240 ⎯ ⎯ 380 ⎯ ⎯ 12 ⎯ ⎯ 23 ⎯ ⎯ 9 ⎯ ⎯ 35 ⎯ ⎯ 26 ⎯ ⎯ 3.8 ⎯ ⎯ 8 ⎯ Gate threshold voltage Vth Drain-source ON-resistance RDS (ON) Forward transfer admittance |Yfs| Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss Rise time VDS =10 V, VGS =0 V, f = 1MHz tr VGS Turn-on time ton 0V Turn-off time Total gate charge (gate-source plus gate-drain) 4.7 Ω Switching time Fall time tf toff Qg Gate-source charge 1 Qgs1 Gate-drain (“Miller”) charge Qgd ID = 4.2A 10 V RL =3.57Ω Drain-source breakdown voltage VOUT VDD ≈ 15 V Duty ≤ 1%, tw = 10 μs VDD ≈ 24 V, VGS =10 V, ID =8.3 A V V mΩ S pF ns nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Drain reverse current Pulse (Note 1) IDRP ⎯ ⎯ ⎯ 33.2 A Forward voltage (diode) VDSF ⎯ ⎯ −1.2 V IDR = 8.3 A, VGS = 0 V 3 2013-11-01 TPCP8004 ID – VDS 4 3.5 3.3 3.2 10 ID – VDS 20 10 10 3.1 4 3.5 5 6 ID (A) 3.0 8 6 2.9 4 2.8 VGS = 2.7 V 2 0 Drain current Drain current ID (A) 8 Common source Ta = 25°C Pulse test 0.2 0 3.3 5 0.4 0.6 Drain−source voltage 0.8 VDS 16 Common source Ta = 25°C Pulse test 6 8 3.2 12 3.1 8 3.0 2.9 4 2.8 VGS = 2.7 V 0 1 0 (V) 0.4 0.8 Drain-source voltage ID – VGS VDS 2 (V) 0.4 VDS (V) Common source VDS = 10 V Pulse test 30 20 Drain−source voltage ID (A) 1.6 VDS – VGS 40 Drain current 1.2 Ta = −55°C 10 100 25 Common source Ta = 25°C Pulse test 0.3 0.2 0.1 ID = 8.3 A 4.2 2.1 0 0 1 2 3 5 4 Gate−source voltage VGS 0 6 0 (V) 2 4 Gate−source voltage |Yfs| – ID Ta = −55°C 25 1 Common source VDS = 10 V Pulse test 1 Drain current 10 ID Drain−source ON resistance RDS (ON) (mΩ) Forward transfer admittance |Yfs| (S) 100 100 0.1 0.1 8 VGS 10 (V) RDS (ON) – ID 100 10 6 (A) 4.5 10 VGS = 10 V 1 0.1 100 Common source Ta = 25°C Pulse test 1 Drain current 4 10 ID 100 (A) 2013-11-01 TPCP8004 RDS (ON) – Ta IDR – VDS 25 100 (A) IDR 20 ID = 4.2, 8.3 Drain reverse current 15 2.1 VGS = 4.5 V 10 ID = 2.1, 4.2, 8.3 A 5 VGS = 10 V 0 −80 −40 0 40 Ambient temperature 80 120 Ta 10 VGS = 0 V Common source Ta = 25°C Pulse test −0.2 0 (°C) −0.4 Capacitance – VDS Vth (V) Gate threshold voltage VDS (V) 80 120 −1.2 Coss Crss 100 Common source VGS = 0 V f = 1 MHz Ta = 25°C 1 10 1.5 1 Common source VDS = 10 V ID = 1mA Pulse test 0.5 0 −80 100 VDS 2 (V) Drain−source voltage 1 (2) 0.5 0 40 80 Ambient temperature Ta 50 160 (°C) 120 Ta 40 30 (°C) 12 12 VDS 6 20 VDD = 24V 4 0 10 20 Total gate charge 5 8 10 0 160 20 Common source ID = 8.3 A Ta = 25°C 16 Pulse test VGS VDS (V) (W) 1.5 40 Dynamic input/output characteristics (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) t=5s (1) 0 Ambient temperature PD – Ta 2 −40 (V) (pF) 1000 C Capacitance −1 Vth – Ta Ciss Drain−source voltage PD −0.8 2.5 10 0.1 Drain power dissipation −0.6 Drain−source voltage 10000 0 1 10 1 160 3 4.5 30 Qg 40 Gate−source voltage Drain-source ON resistance RDS (ON) (mΩ) Common source Pulse test 0 (nC) 2013-11-01 TPCP8004 rth − tw Transient thermal impedance rth (°C/W) 1000 (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) (2) 100 (1) 10 1 Single pulse 0.1 0.0001 0.001 0.1 0.01 1 Pulse width tw 10 100 1000 (s) Safe operating area 100 (A) ID max (Pulse) * 1 ms * ID 10 Drain current t = 10 ms * 1 * Single pulse Ta = 25°C Curves must be derated linearly with increase in temperature. 0.1 0.1 1 Drain−source voltage VDSS max 10 VDS 100 (V) 6 2013-11-01 TPCP8004 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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