TPCP8401

TPCP8401 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS Ⅲ / π-MOS Ⅵ) TPCP8401 ○ Switching Regulator Applications ○ Load Switch Applications • • • • • Lead(Pb)-Free Multi-chip discrete device; built-in P channel MOS FET for main switch and N Channel MOS FET for drive Small footprint due to small and thin package Low drain-source ON resistance : P Channel RDS (ON) = 31 mΩ (typ.) Low drain-source ON resistance High forward transfer admittance : P Channel |Yfs| = 13 S (typ.) • • Low leakage current : P Channel IDSS = −10 μA (VDS = −12 V) Enhancement−mode : P Channel Vth = −0.5 to −1.2 V (VDS = −10 V, ID = −200 μA) 1．Source(Nch） 5．Gate(Pch) S Unit: mm 0.33±0.05 0.05 M A 8 5 2.4±0.1 0.475 1 4 0.65 2.9±0.1 B A 0.05 M B 0.8±0.05 0.025 S 0.17±0.02 0.28 +0.1 -0.11 +0.13 1.12 -0.12 1.12 +0.13 -0.12 0.28 +0.1 -0.11 Absolute Maximum Ratings (Ta = 25°C) P-ch Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) (t = 5 s) (Note 2a) Drain power dissipation (t = 5 s) (Note 2b) Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Note 2a) (Note 4) Channel temperature Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR EAR Tch Rating −12 −12 ±8 −5.5 −22.0 1.96 Unit V V V A 2．Drain(Pch) 3．Drain(Pch) 4．Drain(Pch) 6．Source(Pch) 7．Gate(Nch) 8．Drain(Nch) JEDEC JEITA TOSHIBA ― ― 2-3V1G Weight: 0.017 g (typ.) Circuit Configuration 8 7 6 5 Drain power dissipation W 1.0 W 5.3 −2.8 0.22 150 mJ 1 A mJ °C 2 3 Marking (Note5) 8 7 6 5 8401 ※ 1 2 3 Lot No. 4 1 2006-11-13 2.8±0.1 4 TPCP8401 N-ch Characteristics Drain-source voltage Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VGSS ID IDP Tch EAR Tch Rating 20 ±10 0.1 0.2 150 0.12 150 Unit V V A °C mJ °C Channel temperature Repetitive avalanche energy Single-device value at dual operation (Note 2a, 3b, 5) Channel temperature This transistor is an electrostatic-sensitive device. Handle with caution. Common Absolute Maximum Ratings (Ta=25°C ) Characteristics Storage temperature range Symbol Tstg Rating −55~150 Unit °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Thermal resistance, channel to ambient (t = 5 s) (Note 2a) Symbol Rth (ch-a) Max 63.8 Unit °C/W Thermal resistance, channel to ambient (t = 5 s) (Note 2b) Rth (ch-a) 125 °C/W Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: (a) Mounted on FR4 board (glass epoxy, 0.8mm thick, Cu area: 25.4mm2) (t = 5s) (b) Mounted on FR4 board (glass epoxy, 0.8mm thick, printed minimum pad dimensions: 25.4mm2) (t = 5s) Note 3: VDD = −10 V, Tch = 25°C (initial), L = 0.5 mH, RG = 25 Ω, IAR = −2.75 A Note 4: Repetitive rating: pulse width limited by maximum channel temperature Note 5: “●” on the lower left of the marking indicates pin 1. “*” shows the lot number, which consists of three digits. The first digit denotes the year of manufacture, expressed as the last digit of the calendar year; the next two digits denote the week of manufacture. Week of manufacture (01 for the first week of year, continuing up to 52 or 53) Year of manufacture (The last digit of the calendar year) 2 2006-11-13 TPCP8401 Electrical Characteristics (Ta = 25°C) P-ch Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) Test Condition VGS = ±8 V, VDS = 0 V VDS = −12 V, VGS = 0 V ID = −10 mA, VGS = 0 V ID = −10 mA, VGS = 20 V VDS = −10 V, ID = −200 μA VGS = −1.8 V, ID = −1.4 A Drain-source ON resistance VGS = −2.5 V, ID = −2.8 A VGS = −4.5 V, ID = −2.8 A Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain (“miller”) charge tf toff Qg Qgs1 Qgd |Yfs| Ciss Crss Coss tr ton 4.7 Ω 0V VGS −5 V ID = −2.8 A VOUT RL = 2.1 Ω VDS = −10 V, VGS = 0 V, f = 1 MHz VDS = −10 V, ID = −2.8 A 6.5 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Min ⎯ ⎯ −12 −4 −0.5 ⎯ ⎯ Typ. ⎯ ⎯ ⎯ ⎯ ⎯ 66 44 31 13 1520 330 380 9.5 16 28 74 20 15 5 Max ±10 −10 ⎯ ⎯ −1.2 103 58 38 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ns ⎯ ⎯ ⎯ ⎯ ⎯ nC pF S mΩ Unit μA μA V V VDD ∼ −6 V − Duty < 1%, tw = 10 μs = VDD ∼ −10 V, VGS = −5 V, − ID = −5.5 A Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Drain reverse current (pulse) (Note 1) Forward voltage (diode) Symbol IDRP VDSF Test Condition ⎯ IDR = −5.5 A, VGS = 0 V Min ⎯ ⎯ Typ. ⎯ ⎯ Max −22 1.2 Unit A V 3 2006-11-13 TPCP8401 N-ch Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Symbol IGSS IDSS V (BR) DSS Vth Test Condition VGS = ±10 V, VDS = 0 V VDS = 20 V, VGS = 0 V ID = 0.1 mA, VGS = 0 V VDS = 3 V, ID = 0.1 mA VGS = 1.5 V, ID = 1 mA Drain-source ON resistance RDS (ON) VGS = 2.5 V, ID = 10 mA VGS = 4 V, ID = 10 mA Forward transfer admittance |Yfs| VDS = 3 V, ID = 10 mA 2.5 V VGS 0V 50 Ω ID = 10 mA VOUT RL = 300Ω Min ⎯ ⎯ 20 0.6 ⎯ ⎯ ⎯ 40 Typ. ⎯ ⎯ ⎯ ⎯ 5.2 2.2 1.5 ⎯ Max ±1 1 ⎯ 1.1 15 4 3 ⎯ mS Ω Unit μA μA V V Turn-on time ton ⎯ 70 ⎯ Switching time ns Turn-off time toff VDD ∼ 3 V − Duty < 1%, tw = 10 μs = ⎯ 125 ⎯ Input capacitance Reverse transfer capacitance Output capacitance Ciss Crss Coss VDS = 3 V, VGS = 0 V, f = 1 MHz ⎯ ⎯ ⎯ 9.3 4.5 9.8 ⎯ ⎯ ⎯ pF Precaution Vth can be expressed as the voltage between the gate and source when the low operating current value is ID = 100 μA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on).) Be sure to take this into consideration when using the device. The VGS recommended voltage for turning on this product is 1.5 V or higher. 4 2006-11-13 TPCP8401 Pch ID – VDS −5 −5 −1.8 −1.9 −2.5 −2 −3 −4, −4.5 −1.6 −3 −10 −1.7 −8 −5 −4 −6 −1.8 −2.5 −3 −2 ID – VDS Common source Ta = 25°C Pulse test −1.9 (A) ID Drain current Drain current ID (A) −4 −1.7 −4 −1.6 −2 VGS = −1.4 V −2 −1.5 −1 VGS = −1.4 V Common source Ta = 25°C Pulse test −0.4 −0.8 −1.2 −1.6 −2.0 0 0 0 0 −1 −2 −3 −4 −5 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID – VGS −10 VDS – VGS −1 Common source Ta = 25°C Pulse test −8 (V) VDS 100°C Common source VDS = −10 V Pulse test −0.8 ID (A) −6 −4 25°C −2 Ta = −55°C 0 0 Drain-source voltage −0.6 Drain current −0.4 −0.2 −1.1 A ID = −4.5 A −2.2 A −2 −4 −6 −8 −10 −0.5 −1 −1.5 −2 −2.5 0 0 Gate-source voltage VGS (V) Gate-source voltage VGS (V) |Yfs| – ID 100 RDS (ON) – ID 1 Common source Ta = 25°C Pulse test 0.3 (S) |Yfs| Ta = −55°C 10 100°C 3 25°C Forward transfer admittance Drain-source on resistance RDS (ON) (mΩ) 30 Common source VDS = −10 V Pulse test 0.1 −1.8 V −2.5 V 0.03 VGS = −4.5 V 1 0.3 0.1 −0.1 −0.3 −1 −3 −10 −30 −100 0.01 −0.1 −0.3 −1 −3 −10 −30 −100 Drain current ID (A) Drain current ID (A) 5 2006-11-13 TPCP8401 RDS (ON) – Ta 160 Common source Pulse test 120 −100 IDR – VDS Common source Ta = 25°C Pulse test Drain-source on resistance RDS (ON) (mΩ) (A) −2.8 A VGS = −1.8 V ID = −1.4A −2.5 V −2.8 A −5.5 A −30 IDR 80 Drain current −10 −2.0 −1.8 −4.5 40 ID = −1.4A −3 −1 VGS = 0 V −4.5 V 0 −80 −40 0 40 ID = −1.4 A, −2.8 A, −5.5 A −1 0 80 120 160 0.4 0.8 1.2 1.6 2.0 Ambient temperature Ta (°C) Drain-source voltage VDS (V) Capacitance – VDS 10000 −2.0 Vth – Ta Vth (V) Common source VDS = −10 V ID = −200 μA Pulse test 3000 (pF) Ciss 1000 Coss Crss −1.5 Gate threshold voltage −100 C Capacitance 300 −1.0 100 Common source Ta = 25°C f = 1 MHz VGS = 0 V −0.3 −1 −3 −10 −30 −0.5 30 10 −0.1 0 −80 −40 0 40 80 120 160 Drain-source voltage VDS (V) Ambient temperature Ta (°C) PD – Ta 2.5 −20 Dynamic input/output characteristics −10 Common source VGS (W) (V) (1) t = 5 s 2 glass-epoxy board(a) (Note 2a) (2) Device mounted on a VDS −2.5 V −12 −6 VDD = −10 V VDD = −10 V −8 −5 −4 −2.5 V 0 0 0 40 −2 −5 V −4 Drain power dissipation (1) DC 1 (2) t = 5 s 0.5 (2) DC 0 0 (Note 2b) 40 80 120 160 8 16 24 32 Ambient temperature Ta (°C) Total gate charge Qg (nC) 6 2006-11-13 ゲート･ソース間電圧 1.5 glass-epoxy board(b) Drain-soursce voltage VGS PD ID = −5.5 A −16 Ta = 25°C Pulse test −8 (V) (1) Device mounted on a TPCP8401 1000 rth – tw Transient thermal impedance rth (°C/W) 300 100 Device mounted on a glassepoxy board (b) (Note 2b) 30 10 Device mounted on a glassepoxy board (a) (Note 2a) 3 1 0.3 Single pulse 0.1 0.001 0.01 0.1 1 10 100 1000 Pulse width tw (s) Safe operating area −100 −30 −10 10 ms* −3 −1 −0.3 −0.1 −0.03 −0.01 ID max (pulsed)* 1 m s* Drain current ID (A) *: Single nonrepetitive pulse Ta = 25°C −0.003 Curves must be derated linearly with increase in temperature −0.001 て デ レ テ ング し −0.01 −0.03 −0.1 −0.3 −1 VDSS max −3 −10 −30 −100 Drain-source voltage VDS (V) 7 2006-11-13 TPCP8401 Nch ID – VDS 250 2.5 Common source Ta = 25°C 2.1 1.9 150 100 Ta = 100°C 10 25°C 1 1000 Common srouce VDS = 3 V ID – VGS (mA) 10 ID Drain current Drain current ID (mA) 200 43 2.3 100 1.7 −25°C 50 1.5 VGS = 1.3 V 0.1 0 0 0.5 1 1.5 2 0.01 0 1 2 3 Drain-source voltage VDS (V) Gate-source voltage VGS (V) RDS (ON) – ID 12 Common source Ta = 25°C 6 RDS (ON) – VGS Common source ID = 10 mA Drain-source on resistance RDS (ON) (Ω) 8 VGS = 1.5 V Drain-source on resistance RDS (ON) (Ω) 10 5 4 6 3 Ta = 100°C 25°C 1 −25°C 4 2.5 V 2 4V 0 1 10 100 1000 2 0 0 2 4 6 8 10 Drain current ID (mA) Gate-source voltage VGS (V) RDS (ON) – Ta 8 7 2 Vth – Ta Vth (V) 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 −25 0 25 50 75 100 125 150 Common source ID = 0.1 mA VDS = 3 V Common source Drain-source on resistance RDS (ON) (Ω) 6 5 4 3 2 1 0 −25 VGS = 1.5 V, ID = 1 mA 2.5 V, 10 mA 4 V, 10 mA 0 25 50 75 100 125 150 Ambient temperature Ta (°C) Gate threshold voltage Ambient temperature Ta (°C) 8 2006-11-13 TPCP8401 ⎪Yfs⎪ – ID 500 250 IDR – VDS (mA) Common source VGS = 0 V Ta = 25°C D 150 IDR S 100 ⎪Yfs⎪ 300 Common source VDS = 3 V Ta = 25°C 200 Forward transfer admittance ( S) 50 Drain reverse current IDR 100 30 G 10 5 3 50 1 1 10 100 1000 0 0 −0.2 −0.4 −0.6 −0.8 −1 −1.2 −1.4 Drain current ID (mA) Drain-source voltage VDS (V) Capacitance – VDS 100 50 5000 3000 toff 1000 500 300 tf t – ID Common source VDD = 3 V VGS = 0~2.5 V Ta = 25°C (pF) C 10 5 Ciss Coss Crss Switching time Capacitance t Common source (ns) 100 ton 50 30 tr 1 VGS = 0 V f = 1 MHz Ta = 25°C 0.3 0.1 0.5 1 5 10 50 100 Drain-source voltage VDS (V) 10 0.1 1 10 100 Drain current ID (mA) 9 2006-11-13 TPCP8401 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 10 2006-11-13