TPCP8407,LF(O

TPCP8407 MOSFETs Silicon P-/N-Channel MOS (U-MOS /U-MOS ) TPCP8407 1. Applications • Motor Drivers • Mobile Equipment 2. Features (1) AEC-Q101 qualified (2) Small, thin package (3) Low gate charge N-channel MOSFET: QSW = 4.7 nC (typ.) P-channel MOSFET: QSW = 5.5 nC (typ.) (4) Low drain-source on-resistance N-channel MOSFET: RDS(ON) = 29.1 mΩ (typ.) (VGS = 10 V) P-channel MOSFET: RDS(ON) = 43.7 mΩ (typ.) (VGS = -10V) (5) Low leakage current N-channel MOSFET: IDSS = 10 µA (max) (VDS = 40 V) P-channel MOSFET: IDSS = -10 µA (max) (VDS = -40 V) (6) Enhancement mode N-channel MOSFET: Vth = 2 to 3 V (VDS = 10 V, ID = 1 mA) P-channel MOSFET: Vth = -2 to -3 V (VDS = -10 V, ID = -1 mA) 3. Packaging and Internal Circuit 1: Source (N-channel) 2: Gate (N-channel) 3: Source (P-channel) 4: Gate (P-channel) 5, 6: Drain (P-channel) 7, 8: Drain (N-channel) PS-8 Start of commercial production ©2016 Toshiba Corporation 1 2013-05 2016-02-24 Rev.4.0 TPCP8407 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) 4.1. N-Channel MOSFET Characteristics Drain-source voltage Gate-source voltage Drain current (DC) (Note 1) Drain current (pulsed) Symbol Rating Unit VDSS 40 V VGSS ±20 ID 5 A (Note 1) IDP 20 Power dissipation (single operation) (t = 5 s) (Note 2), (Note 4) PD(1) 1.77 Power dissipation (per device for dual operation) (t = 5 s) (Note 2), (Note 5) PD(2) 1.47 Power dissipation (single operation) (t = 5 s) (Note 3), (Note 4) PD(1) 0.69 Power dissipation (per device for dual operation) (t = 5 s) (Note 3), (Note 5) PD(2) 0.43 (Note 6) EAS 33.2 IAR 5 A Channel temperature (Note 7) Tch 175  Storage temperature (Note 7) Tstg -55 to 175 Symbol Rating Unit V Single-pulse avalanche energy Avalanche current W mJ 4.2. P-Channel MOSFET Characteristics Drain-source voltage VDSS -40 Gate-source voltage VGSS -20/+10 Drain current (DC) (Note 1) ID -4 Drain current (pulsed) (Note 1) IDP -16 A Power dissipation (single operation) (t = 5 s) (Note 2), (Note 4) PD(1) 1.77 Power dissipation (per device for dual operation) (t = 5 s) (Note 2), (Note 5) PD(2) 1.47 Power dissipation (single operation) (t = 5 s) (Note 3), (Note 4) PD(1) 0.69 Power dissipation (per device for dual operation) (t = 5 s) (Note 3), (Note 5) PD(2) 0.43 (Note 6) EAS 46.2 mJ IAR -4 A  Single-pulse avalanche energy Avalanche current Channel temperature (Note 7) Tch 175 Storage temperature (Note 7) Tstg -55 to 175 W Note : Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). ©2016 Toshiba Corporation 2 2016-02-24 Rev.4.0 TPCP8407 5. Thermal Characteristics Characteristics Symbol Max Unit /W Channel-to-ambient thermal resistance (single operation) (t = 5 s) (Note 2), (Note 4) Rth(ch-a)(1) 84.7 Channel-to-ambient thermal resistance (per device for dual operation) (t = 5 s) (Note 2), (Note 5) Rth(ch-a)(2) 102 Channel-to-ambient thermal resistance (single operation) (t = 5 s) (Note 3), (Note 4) Rth(ch-a)(1) 217.3 Channel-to-ambient thermal resistance (per device for dual operation) (t = 5 s) (Note 3), (Note 5) Rth(ch-a)(2) 348.8 Note 1: Ensure that the channel temperature does not exceed 175 . Note 2: Device mounted on a glass-epoxy board (a), Figure 5.1 Note 3: Device mounted on a glass-epoxy board (b), Figure 5.2 Note 4: Power dissipation and thermal resistance values per device with the other device being off (During single operation, power is supplied to only one of the two devices.) Note 5: Power dissipation and thermal resistance values per device for dual operation (During dual operation, power is evenly supplied to both devices.) Note 6: N channel: VDD = 25 V, Tch = 25  (initial), L = 1.379 mH, RG = 1 Ω, IAR = 5 A P channel: VDD = -25 V, Tch = 25  (initial), L = 2.999 mH, RG = 25 Ω, IAR = -4 A Note 7: The definitions of the absolute maximum channel and storage temperatures are qualified per AEC-Q101. Fig. 5.1 Device Mounted on a Glass-Epoxy Board (a) Note: Fig. 5.2 Device Mounted on a Glass-Epoxy Board (b) This transistor is sensitive to electrostatic discharge and should be handled with care. ©2016 Toshiba Corporation 3 2016-02-24 Rev.4.0 TPCP8407 6. Electrical Characteristics 6.1. Static Characteristics (Ta = 25  unless otherwise specified) 6.1.1. N-Channel MOSFET Characteristics Symbol Gate leakage current Drain cut-off current Drain-source breakdown voltage Drain-source breakdown voltage (Note 8) Gate threshold voltage Drain-source on-resistance Test Condition IGSS VGS = ±16 V, VDS = 0 V Min Typ. Max Unit   ±10 µA IDSS VDS = 40 V, VGS = 0 V   10 V(BR)DSS ID = 10 mA, VGS = 0 V 40   V(BR)DSX V ID = 10 mA, VGS = -20 V 20   Vth VDS = 10 V, ID = 1 mA 2 2.5 3 RDS(ON) VGS = 6 V, ID = 2.5 A  39.3 62.8 VGS = 10 V, ID = 2.5 A  29.1 36.3 Min Typ. Max Unit   ±10 µA mΩ 6.1.2. P-Channel MOSFET Characteristics Symbol Gate leakage current Drain cut-off current Drain-source breakdown voltage Drain-source breakdown voltage Gate threshold voltage Drain-source on-resistance (Note 8) Test Condition IGSS VGS = -16/+10 V, VDS = 0 V IDSS VDS = -40 V, VGS = 0 V   -10 V(BR)DSS ID = -10 mA, VGS = 0 V -40   V(BR)DSX ID = -10 mA, VGS = 10 V -30   Vth VDS = -10 V, ID = -1 mA -2 -2.5 -3 VGS = -6 V, ID = -2 A  51.4 82.2 VGS = -10 V, ID = -2 A  43.7 56.8 RDS(ON) V mΩ Note 8: If a reverse bias is applied between gate and source, this device enters V(BR)DSX mode. Note that the drainsource breakdown voltage is lowered in this mode. ©2016 Toshiba Corporation 4 2016-02-24 Rev.4.0 TPCP8407 6.2. Dynamic Characteristics (Ta = 25  unless otherwise specified) 6.2.1. N-Channel MOSFET Characteristics Input capacitance Symbol Ciss Test Condition VDS = 10 V, VGS = 0 V, f = 1 MHz Min Typ. Max Unit  505  pF Reverse transfer capacitance Crss  66  Output capacitance Coss  115  Switching time (rise time) tr  5  Switching time (turn-on time) ton  12  tf  4  toff  17  Min Typ. Max Unit  810  pF  85   130   8  Switching time (fall time) Switching time (turn-off time) See Fig. 6.2.1.1. ns Fig. 6.2.1.1 Switching Time Test Circuit 6.2.2. P-Channel MOSFET Characteristics Symbol Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss Test Condition VDS = -10 V, VGS = 0 V, f = 1 MHz Switching time (rise time) tr Switching time (turn-on time) ton  25  tf  33  toff  126  Switching time (fall time) Switching time (turn-off time) See Fig. 6.2.2.1. ns Fig. 6.2.2.1 Switching Time Test Circuit ©2016 Toshiba Corporation 5 2016-02-24 Rev.4.0 TPCP8407 6.3. Gate Charge Characteristics (Ta = 25  unless otherwise specified) 6.3.1. N-Channel MOSFET Characteristics Symbol Total gate charge (gate-source plus gate-drain) Qg Test Condition VDD ≈ 32 V, VGS = 10 V, ID = 5 A Min Typ. Max Unit  11.8  nC Gate-source charge 1 Qgs1  2.1  Gate-drain charge Qgd  3.9  Gate switch charge QSW  4.7  Min Typ. Max Unit nC 6.3.2. P-Channel MOSFET Characteristics Symbol Total gate charge (gate-source plus gate-drain) VDD ≈ -32 V, VGS = -10 V, ID = -4 A  18  Qgs1  2.6  Gate-drain charge Qgd  4.6  Gate switch charge QSW  5.5  Gate-source charge 1 Qg Test Condition 6.4. Source-Drain Characteristics (Ta = 25  unless otherwise specified) 6.4.1. N-Channel MOSFET Characteristics Reverse drain current (pulsed) Symbol (Note 9) Diode forward voltage Test Condition Min Typ. Max Unit IDRP    20 A VDSF IDR = 5 A, VGS = 0 V   -1.2 V Min Typ. Max Unit 6.4.2. P-Channel MOSFET Characteristics Reverse drain current (pulsed) Diode forward voltage Symbol (Note 9) Test Condition IDRP    -16 A VDSF IDR = -4 A, VGS = 0 V   1.2 V Note 9: Ensure that the channel temperature does not exceed 175 . 7. Marking Fig. 7.1 Marking ©2016 Toshiba Corporation 6 2016-02-24 Rev.4.0 TPCP8407 8. Characteristics Curves (Note) 8.1. N-Channel MOSFET Fig. 8.1.1 ID - VDS Fig. 8.1.2 ID - VDS Fig. 8.1.3 ID - VGS Fig. 8.1.4 VDS - VGS Fig. 8.1.5 RDS(ON) - ID Fig. 8.1.6 RDS(ON) - Ta (Note 10) ©2016 Toshiba Corporation 7 2016-02-24 Rev.4.0 TPCP8407 Fig. 8.1.7 IDR - VDS Fig. 8.1.8 Capacitance - VDS Fig. 8.1.9 Vth - Ta (Note 10) Fig. 8.1.10 Dynamic Input/Output Characteristics Fig. 8.1.11 PD - Ta (Guaranteed Maximum) (Note 10) ©2016 Toshiba Corporation 8 2016-02-24 Rev.4.0 TPCP8407 Fig. 8.1.12 rth - tw (Guaranteed Maximum) Fig. 8.1.13 Safe Operating Area (Guaranteed Maximum) ©2016 Toshiba Corporation 9 2016-02-24 Rev.4.0 TPCP8407 8.2. P-Channel MOSFET Fig. 8.2.1 ID - VDS Fig. 8.2.2 ID - VDS Fig. 8.2.3 ID - VGS Fig. 8.2.4 VDS - VGS Fig. 8.2.5 RDS(ON) - ID Fig. 8.2.6 RDS(ON) - Ta (Note 10) ©2016 Toshiba Corporation 10 2016-02-24 Rev.4.0 TPCP8407 Fig. 8.2.7 IDR - VDS Fig. 8.2.8 Capacitance - VDS Fig. 8.2.9 Vth - Ta (Note 10) Fig. 8.2.10 Dynamic Input/Output Characteristics Fig. 8.2.11 PD - Ta (Guaranteed Maximum) (Note 10) ©2016 Toshiba Corporation 11 2016-02-24 Rev.4.0 TPCP8407 Fig. 8.2.12 rth - tw (Guaranteed Maximum) Fig. 8.2.13 Safe Operating Area (Guaranteed Maximum) Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. Note 10:The definitions of the absolute maximum channel and storage temperatures are qualified per AEC-Q101. ©2016 Toshiba Corporation 12 2016-02-24 Rev.4.0 TPCP8407 Package Dimensions Unit: mm Weight: 0.017 g (typ.) Package Name(s) TOSHIBA: 2-3V1S Nickname: PS-8 ©2016 Toshiba Corporation 13 2016-02-24 Rev.4.0 TPCP8407 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application with which the Product will be used with or for. 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TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS. ©2016 Toshiba Corporation 14 2016-02-24 Rev.4.0 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Toshiba: TPCP8407,LF