TPCP8601

TPCP8601 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) TPCP8601 High-Speed Switching Applications DC-DC Converter Applications Strobo Flash Applications • • • High DC current gain: hFE = 200 to 500 (IC = −0.6 A) Low collector-emitter saturation: VCE (sat) = −0.19 V (max) High-speed switching: tf = 35 ns (typ.) 0.475 1 4 Unit: mm 0.33±0.05 0.05 M A 8 5 2.4±0.1 0.65 2.9±0.1 B A 0.05 M B Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation (t = 10s) Junction temperature Storage temperature range t = 10s DC DC (Note 1) Symbol VCBO VCEO VEBO IC ICP IB Pc (Note 2) Tj Tstg Rating −20 −20 −7 −4.0 −7.0 −0.5 3.3 1.3 150 −55 to 150 Unit V V V A A W °C °C 1.Collector 2.Collector 3.Collector 4.Base S 0.8±0.05 0.025 S 0.17±0.02 0.28 +0.1 -0.11 +0.13 1.12 -0.12 1.12 +0.13 -0.12 0.28 +0.1 -0.11 Pulse (Note 1 ) 5.Emitter 6.Collector 7.Collector 8.Collector JEDEC JEITA TOSHIBA ― ― 2-3V1A Weight: 0.017 g (typ.) Note 1: Ensure that the junction temperature does not exceed 150°C during use of this device. Note 2: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2) Note 3: ● on the lower left of the marking indicates Pin 1. * Weekly code (three digits): Week of manufacture (01 for the first week of the year, continuing up to 52 or 53) Year of manufacture (lowest-order digit of the calendar year) Figure 1. Circuit Configuration (Top View) 8　 7 　6 　 5 1 　 2　 3　 4 Figure 2. Marking (Note 3) 8 7 6 5 8601 * 1 2 3 4 2.8±0.1 Type Lot No. (weekly code) 1 2004-12-10 TPCP8601 Electrical Characteristics (Ta = 25°C) Characteristic Collector cut-off current Emitter cut-off current Collector-base breakdown voltage Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Rise time Switching time Storage time Fall time Symbol ICBO IEBO V (BR) CBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) tr tstg tf Test Condition VCB = −20 V, IE = 0 VEB = −7 V, IC = 0 IC = −1 mA, IB = 0 IC = −10 mA, IB = 0 VCE = −2 V, IC = −0.6 A VCE = −2 V, IC = −2.0 A IC = −2 A, IB = −67 mA IC = −2 A, IB = −67 mA See Figure 3 circuit diagram VCC ∼ 12 V, RL = 6 Ω − IB1 = −IB2 = −67 mA Min ⎯ ⎯ −20 −20 200 100 ⎯ ⎯ ⎯ ⎯ ⎯ Typ. ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 72 170 35 Max −100 −100 ⎯ ⎯ 500 ⎯ −0.19 −1.1 ⎯ ⎯ ⎯ ns V V Unit nA nA V V Figure 3. Switching Time Test Circuit & Timing Chart VCC IB2 I B1 IB1 20μs Input Duty cycle ＜1% I B2 RL Output 2 2004-12-10 TPCP8601 IC – VCE −5 Common emitter Ta = 25°C Single nonrepetitive pulse 1000 Ta = 100°C 25 hFE – IC (A) −4 hFE −30 −20 −15 −10 IC −55 Collector current DC current gain −3 100 −2 −8 −6 −1 −4 IB = −2 mA 0 0 −0.4 −0.8 −1.2 −1.6 −2.0 −2.4 10 0.001 Common emitter VCE = −2 V Single nonrepetitive pulse 0.01 0.1 1 10 Collector−emitter voltage VCE (V) Collector current −IC (A) VCE (sat) – IC 1 VBE (sat) – IC 10 Common emitter β = 30 Single nonrepetitive pulse Collector−emitter saturation voltage −VCE (sat) (V) 0.1 Ta = 100°C 25 −55 Base−emitter saturation voltage −VBE (sat) (V) Common emitter β = 30 Single nonrepetitive pulse 1 Ta = −55°C 0.01 100 25 0.001 0.001 0.01 0.1 1 10 0.1 0.001 0.01 0.1 1 10 Collector current −IC (A) Collector current −IC (A) IC – VBE −4 Common emitter VCE = −2 V Single nonrepetitive pulse (A) Collector current IC −3 −2 −1 Ta = 100°C 0 0 −0.4 25 −0.8 −55 −1.2 −1.6 Base−emitter voltage VBE (V) 3 2004-12-10 TPCP8601 rth – tw 1000 Transient thermal impedance rth(j-a) (°C/W) 100 10 Curves apply only to limited areas of thermal resistance. Single nonrepetitive pulse Ta = 25°C Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2) 0.01 0.1 1 10 100 1000 1 0.001 Pulse width tw (s) Safe operating area 100 (A) 10 IC max (Pulse)* 10 ms* 1 ms* 100 μs* −IC Collector current IC max (Continuous)* 1 10 s* 100 ms* *: Single nonrepetitive pulse Ta = 25°C Note that the curves for 100 ms, 10 s and DC operation will be different when the devices aren’t 0.1 mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2). These characteristic curves must be derated linearly with increase in temperature. 0.01 0.01 0.1 1 DC operation Ta = 25°C VCEO max 10 100 Collector−emitter voltage −VCE (V) 4 2004-12-10 TPCP8601 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2004-12-10