TPCS8214

TPCS8214 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ) TPCS8214 Lithium Ion Battery Applications • • • • • • Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 10.5mΩ (typ.) High forward transfer admittance: |Yfs| = 10S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) Enhancement mode: Vth = 0.5~1.4 V (VDS = 10 V, ID = 200μA) Common drain Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD (1) PD (2) PD (1) PD (2) EAS IAR EAR Tch Tstg Rating 30 30 ±12 6 24 1.1 W 0.75 0.6 W 0.35 9.4 6 0.075 150 −55~150 mJ A mJ °C °C Unit V V V A Single-device Drain power operation (Note 3a) dissipation Single-device value (t = 10 s) (Note 2a) at dual operation (Note 3b) Drain power dissipation Single-device value (t = 10 s) (Note 2b) at dual operation (Note 3b) Single pulse avalanche energy (Note 4) Avalanche current Repetitive avalanche energy Single-device value at dual operation (Note 2a, 3b, 5) Channel temperature Storage temperature range Single-device operation (Note 3a) JEDEC JEITA TOSHIBA ⎯ ⎯ 2-3R1E Weight: 0.035 g (typ.) Circuit Configuration 8 7 6 5 1 2 3 4 Note: (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5): See the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Please handle with caution. WARNING 【Handling Precaution for Power MOSFET in use of Protection Circuit for Battery Pack】 Flame-retardant resins of UL94-V0 flammability class are used in packages, however, they are not noncombustible．Use a unit example PTC Thermistor, which can shut off the power supply if a short-circuit occurs. If the power supply is not shut off on the occurring short-circuit, a large short-circuit current will flow continuously, which may cause the device to catch fire or smoke. 1 2009-09-29 TPCS8214 Thermal Characteristics Characteristics Single-device operation (Note 3a) Symbol Rth (ch-a) (1) Rth (ch-a) (2) Rth (ch-a) (1) Rth (ch-a) (2) Max 114 °C/W 167 Unit Thermal resistance, channel to ambient (Note 2a) Single-device value at (t = 10 s) dual operation (Note 3b) Single-device operation (Note 3a) 208 °C/W 357 Thermal resistance, channel to ambient (Note 2b) Single-device value at (t = 10 s) dual operation (Note 3b) Marking (Note 6) Part No. (or abbreviation code) S8214 Lot No. Note 7 Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: a) Device mounted on a glass-epoxy board (a) FR-4 25.4 × 25.4 × 0.8 (unit: mm) b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (unit: mm) (a) (b) Note 3: a) The power dissipation and thermal resistance values are shown for a single device (During single-device operation, power is only applied to one device.) b) The power dissipation and thermal resistance values are shown for a single device (During dual operation, power is evenly applied to both devices.) Note 4: VDD = 24 V, Tch = 25°C (initial), L = 0.2 mH, RG = 25 Ω, IAR = 6 A Note 5: Repetitive rating: pulse width limited by max channel temperature Note 6: ○ on the lower left of the marking indicates Pin 1. * Weekly code: (Three digits) Week of manufacture (01 for first week of year, continuing up to 52 or 53) Year of manufacture (The last digit of the calendar year) Note 7: A line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2009-09-29 TPCS8214 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth Test Condition VGS = ±10 V, VDS = 0 V VDS = 30 V, VGS = 0 V ID = 10 mA, VGS = 0 V ID = 10 mA, VGS = −12 V VDS = 10 V, ID = 200 μA VGS = 2.5 V, ID = 4.2 A Drain-source ON resistance RDS (ON) VGS = 4.0 V, ID = 4.8 A VGS = 4.5 V, ID = 4.8 A Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-ON time Switching time Fall time Turn-OFF time Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain (“miller”) charge tf toff Qg Qgs1 Qgd VDD ∼ 24 V, VGS = 5 V, ID = 6 A − |Yfs| Ciss Crss Coss tr ton 5V VGS 0V 4.7 Ω Min ⎯ ⎯ Typ. ⎯ ⎯ ⎯ ⎯ ⎯ Max ±10 Unit μA μA 10 ⎯ ⎯ 30 15 0.5 ⎯ ⎯ ⎯ V V 1.4 18.5 13.5 13 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 12.5 11 10.5 10 3240 285 315 21 33 15 66 42 7 14 mΩ VDS = 10 V, ID = 3.0 A VDS = 10 V, VGS = 0 V, f = 1 MHz 5 ⎯ ⎯ ⎯ S pF ID = 3 A RL = 4.7Ω ⎯ VOUT ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ns ⎯ ⎯ ⎯ ⎯ ⎯ VDD ∼ 15 V − Duty < 1%, tw = 10 μs = nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol IDRP VDSF Test Condition ⎯ Min ⎯ ⎯ Typ. ⎯ ⎯ Max 24 −1.2 Unit A V IDR = 6 A, VGS = 0 V 3 2009-09-29 TPCS8214 ID – VDS 10 4.5 2 .5 8 3.1 4 6 1.7 2 1.9 1.8 Common source Ta = 25°C, Pulse test 16 20 2.5 3.1 4 4.5 ID – VDS 2 Common source Ta = 25°C 1.9 Pulse test (A) ID ID Drain current (A) 12 1.8 8 1.7 4 1.6 VGS = 1.5 V Drain current 4 1.6 2 VGS = 1.5 V 0 0 0.2 0.4 0.6 0.8 1.0 0 0 1 2 3 4 5 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID – VGS 12 0.5 VDS – VGS Common source 10 VDS = 10 V Pulse test VDS (V) Common source Ta = 25°C 0.4 Pulse test (A) ID 8 6 Drain−source voltage 0.3 Drain current 0.2 ID = 1.5 A 0.1 6 3 12 4 25 2 100 Ta = −55°C 0 0 1 2 3 0 0 2 4 6 8 10 12 Gate-source voltage VGS (V) Gate-source voltage VGS (V) |Yfs| – ID 100 Ta = −55°C 25 100 100 RDS (ON) – ID Common source 50 Ta = 25°C Pulse test 50 Forward transfer admittance |Yfs| (S) 30 Drain-source ON resistance RDS (ON) (mΩ) 30 VGS = 2.5 V 10 4 5 3 4.5 3.1 10 5 3 Common source VDS = 10 V Pulse test 1 0.1 0.3 0.5 1 3 5 10 30 50 100 1 0.1 0.3 0.5 1 3 5 10 30 50 100 Drain current ID (A) Drain current ID (A) 4 2009-09-29 TPCS8214 RDS (ON) – Ta 30 100 IDR – VDS (A) 50 30 10 5 3 Common source Drain-source ON resistance RDS (ON) (mΩ) Pulse test ID = 6 A 20 1 .5 VGS = 2.5 V 10 3.1 4 3 IDR Drain reverse current 10 5 3 1 1 0.5 0.3 0 VGS = −1 V Common source Ta = 25°C Pulse test 4.5 0 −80 −40 0 40 80 120 160 0.1 0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 Ambient temperature Ta (°C) Drain-source voltage VDS (V) C – VDS 10000 2.0 Vth – Ta Vth (V) Ciss Common source VDS = 10 V 1.6 ID = 200 μA Pulse test 1.2 (pF) 1000 Coss 100 Crss Gate threshold voltage Capacitance C 0.8 10 0.4 Common source Ta = 25°C VGS = 0 V f = 1 MHz 1 10 100 0 −80 −40 0 40 80 120 160 1 0.1 Ambient temperature Ta (°C) Drain−source voltage VDS (V) PD – Ta 1.2 (1) Device mounted on a glass-epoxy board (a) (Note 2a) (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b) t = 10 s Dynamic input/output characteristics 30 6 VDD = 24 V VDS (V) Drain power dissipation PD (W) 1 0.8 (2) (3) 20 Drain−source voltage VDS VGS 4 0.6 12 10 6 6 VDD = 12, 24 V Common source ID = 6 A Ta = 25°C, Pulse test 10 20 30 40 50 60 2 0.4 (4) 0.2 0 0 50 100 150 200 0 0 0 70 Ambient temperature Ta (°C) Total gate charge Qg (nC) 5 2009-09-29 Gate-source voltage VGS (V) TPCS8214 rth − tw 1000 Device mounted on a glass-epoxy board (a) (Note 2a) 500 (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) 300 Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b) (4) (3) (2) (1) rth (°C/W) Transient thermal impedance 100 50 30 10 5 3 1 0.5 0.3 Single pulse 0.1 0.001 0.01 0.1 1 10 100 1000 Pulse width tw (s) Safe operating area 100 Single-device value at dual operation (Note 3b) ID max (Pulse) * (A) 10 10 ms * 1 ms * Drain current ID 1 * Single pulse Ta = 25°C Curves must be derated linearly with increase in temperature. 0.1 0.1 1 VDSS max 10 100 Drain−source voltage VDS (V) 6 2009-09-29 TPCS8214 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS. • Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document. Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this document. • Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part. • Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. 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Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. • Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 7 2009-09-29