TPD1030F_07

TPD1030F_07

  • 厂商:

    TOSHIBA(东芝)

  • 封装:

  • 描述:

    TPD1030F_07 - 2-IN-1 Low-Side Switch for Motor, Solenoid and Lamp Drive - Toshiba Semiconductor

  • 详情介绍
  • 数据手册
  • 价格&库存
TPD1030F_07 数据手册
TPD1030F Toshiba Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit TPD1030F 2-IN-1 Low-Side Switch for Motor, Solenoid and Lamp Drive The TPD1030F is a 2-IN-1 low-side switch. The IC has a vertical MOSFET output which can be directly driven from a CMOS or TTL logic circuit (e.g., an MPU). The IC is equipped with intelligent self-protection functions. Features • Two built-in power IC chips with a new structure combining a control block and a vertical power MOSFET (L2-π-MOS) on each chip. Can directly drive a power load from a CMOS or TTL logic. Weight: 0.08 g (typ.) Built-in protection circuits against overvoltage (active clamp), overtemperature (thermal shutdown), and overcurrent (current limiter). Low Drain-Source ON-resistance: RDS (ON) = 0.6 Ω (max) (@VIN = 5 V, ID = 0.5 A, Tch = 25°C) Low Leakage Current: IDSS = 10 μA (max) (@VIN = 0 V, VDS = 30 V, Tch = 25°C) Low Input Current: IIN = 300 μA (max) (@VIN = 5 V, Tch = 25°C) 8-pin SOP package with embossed-tape packing. • • • • • • Pin Assignment (top view) Marking SOURCE1 1 8 DRAIN1 TPD1030 F IN1 2 7 DRAIN1 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. SOURCE2 3 6 DRAIN2 IN2 4 5 DRAIN2 Note1: Due to its MOS structure, this product is sensitive to static electricity. 1 2006-10-31 TPD1030F Block Diagram SOURCE1 1 Overtemperature Detection /Protection IN1 2 Overcurrent Detection /Protection 8 DRAIN1 7 DRAIN1 SOURCE2 3 Overtemperature Detection /Protection IN2 4 Overcurrent Detection /Protection 6 DRAIN2 5 DRAIN2 Pin Description Pin No. 1 2 3 4 Symbol SOURCE1 IN1 SOURCE2 IN2 Source pin 1 Input pin 1 This pin is connected to a pull-down resistor internally, so that even when input wiring is open-circuited, output can never be turned on inadvertently. Source pin 2 Input pin 2 This pin is connected to a pull-down resistor internally, so that even when input wiring is open-circuited, output can never be turned on inadvertently. Drain pin 2 Drain current is limited (by current limiter) if it exceeds 1 A (min) in order to protect the IC. Drain pin 1 Drain current is limited (by current limiter) if it exceeds 1 A (min) in order to protect the IC. Pin Description 5, 6 DRAIN2 7, 8 DRAIN1 2 2006-10-31 TPD1030F Timing Chart Input Signal Overcurrent Protection Overtemperature Protection Output Current Current limiting (limiter) Overtemperature protection (Note2) Note2: The overheating detector circuits feature hysteresis. After overheating is detected, normal operation is restored only when the channel temperature falls by the hysteresis amount (5°C typ.) in relation to the overheating detection temperature. Truth Table IN L H L H L H VOUT H L H H H H Mode Normal Overcurrent Overtemperature Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain current Input voltage Power dissipation (t = 10 s) Single pulse active clamp capability (Note 4) Active clamp current Repetitive active clamp capability (Note 5) Operating temperature Channel temperature Storage temperature Symbol VDS (DC) ID VIN PD EAS IAR EAR Topr Tch Tstg Rating 40 Internally Limited −0.3 to 7 2.0 (Note 3) 10 1 0.2 −40 to 110 150 −55 to 150 Unit V A V W mJ A mJ °C °C °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 3 2006-10-31 TPD1030F Thermal Characteristics Characteristics Thermal resistance, channel to ambient (t = 10 s) (Note3) Symbol Rth (ch-a) Max 62.5 Unit °C/W Note 3: Drive operation: Mounted on glass epoxy board [25.4mm × 25.4mm × 0.8mm] (with the two devices operating) Note 4: Active clamp capability (single pulse) test condition VDD = 25 V, Starting Tch = 25°C, L = 10 mH, IAR = 1 A, RG = 25 Ω Note 5: Repetitive rating, pulse width limited by maximum channel temperature. Electrical Characteristics Characteristics Drain-source clamp voltage Symbol V (CL) DSS Test Circuit ⎯ Test Condition Tch=-40~110℃ Tch=25℃ Tch=-40~110℃ Tch=25℃ Tch=-40~110℃ Tch=25℃ Tch=-40~110℃ Tch=25℃ Tch=-40~110℃ Tch=25℃ Tch=-40~110℃ ⎯ Tch=25℃ Tch=-40~110℃ Tch=25℃ 1 tOFF Source-drain diode forward voltage VDSF ⎯ Tch=-40~110℃ Tch=25℃ Tch=-40~110℃ Tch=25℃ IF = 1 A, VIN = 0 V VDD = 13 V, VIN = 0V/5 V, ID = 0.5 A VIN = 0 V, ID=1mA VDS = 13 V, ID=10mA ⎯ ⎯ VIN = 0 V, VDS=30V VIN = 5 V, at normal operation VIN = 5 V, when overcurrent protective circuit is actuated VIN = 5 V, ID = 0.5 A VIN = 5 V VIN = 5 V Min 40 1.0 0.9 3 3.5 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 150 1 0.7 ⎯ ⎯ ⎯ ⎯ ⎯ Typ. ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 0.44 ⎯ 160 1.8 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Max 60 2.8 3.0 7 7 10 100 300 μA 350 0.6 0.9 ⎯ ⎯ ⎯ 30 60 60 90 1.7 V μs Unit V Input threshold voltage Protective circuit operation input voltage range Drain cut-off current Vth ⎯ V VIN (opr) ⎯ V IDSS IIN (1) ⎯ ⎯ ⎯ μA Input current IIN (2) Drain-source on resistance Overtemperature protection Overcurrent protection RDS (ON) TS IS ⎯ ⎯ ⎯ Ω °C A tON Switching time Test Circuit 1 Switching time measuring circuit Test Circuit TPD1030F IN OUT GND To be set so that ID = 0.5 A. 13 V Measured Waveforms VIN Waveform 10% 90% VOUT Waveform tON 10% tOFF 13 V 90% 5V P.G V 4 2006-10-31 TPD1030F Package Dimensions Weight: 0.08 g (typ.) 5 2006-10-31 TPD1030F RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2006-10-31
TPD1030F_07
1. 物料型号: - 型号:TPD1030F - 制造商:TOSHIBA

2. 器件简介: - TPD1030F是东芝公司生产的2-IN-1低侧开关,用于电机、电磁铁和灯驱动。 - 该集成电路具有垂直MOSFET输出,可以直接由CMOS或TTL逻辑电路(例如微处理器)驱动。 - 集成电路配备了智能自我保护功能。

3. 引脚分配: - 1号引脚:SOURCE1(源极1) - 2号引脚:IN1(输入1,内部连接下拉电阻,即使输入线开路,输出也不会误动作) - 3号引脚:SOURCE2(源极2) - 4号引脚:IN2(输入2,内部连接下拉电阻,即使输入线开路,输出也不会误动作) - 5/6号引脚:DRAIN2(漏极2,如果超过1A将限制漏极电流以保护IC) - 7/8号引脚:DRAIN1(漏极1,如果超过1A将限制漏极电流以保护IC)

4. 参数特性: - 漏源导通电阻低:RDs(ON) = 0.6Ω(最大值,@VIN 5V,ID=0.5A,Tch=25°C) - 低漏电流:IDSS = 10μA(最大值,@VIN=0V,VDS=30V,Tch=25°C) - 低输入电流:IIN = 300μA(最大值,@VIN=5V,Tch=25°C) - 封装:8引脚SOP封装,带有凸起胶带包装。

5. 功能详解: - 包含两个内置电源IC芯片,采用新型结构,每个芯片上集成控制块和垂直功率MOSFET。 - 内置过压(主动钳位)、过热(热关断)和过流(电流限制器)保护电路。

6. 应用信息: - 适用于需要高可靠性和安全性的电子系统,如电机控制、电磁铁驱动和灯具驱动等。

7. 封装信息: - 封装类型:8引脚SOP封装。 - 重量:0.08g(典型值)。
TPD1030F_07 价格&库存

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