TPN1R603PL,L1Q

TPN1R603PL MOSFETs Silicon N-channel MOS (U-MOS-H) TPN1R603PL 1. Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators • Motor Drivers 2. Features (1) High-speed switching (2) Small gate charge: QSW = 11 nC (typ.) (3) Small output charge: Qoss = 23 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 1.2 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (6) Enhancement mode: Vth = 1.1 to 2.1 V (VDS = 10 V, ID = 0.3 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON Advance Start of commercial production ©2016-2019 Toshiba Electronic Devices & Storage Corporation 1 2016-08 2019-10-18 Rev.2.0 TPN1R603PL 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Drain-source voltage Gate-source voltage Rating Unit V VDSS 30 (Note 1) VGSS ±20 Drain current (DC) (Tc = 25 ) (Note 2) ID 80 Drain current (DC) (Silicon limit) (Note 2), (Note 3) ID 188 Drain current (pulsed) (t = 100 µs) (Note 2) IDP 200 Power dissipation (Tc = 25 ) PD 104 A W Power dissipation (Note 4) PD 2.67 Power dissipation (Note 5) PD 0.63 Single-pulse avalanche energy (Note 6) EAS 52 mJ Single-pulse avalanche current (Note 6) IAS 80 A  Channel temperature Tch 175 Storage temperature Tstg -55 to 175 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 5. Thermal Characteristics Characteristics Symbol Max Unit /W Channel-to-case thermal resistance (Tc = 25 ) Rth(ch-c) 1.43 Channel-to-ambient thermal resistance (Ta = 25 ) (Note 4) Rth(ch-a) 56 Channel-to-ambient thermal resistance (Ta = 25 ) (Note 5) Rth(ch-a) 235 Note 1: +20V /-16V ensured at DC condition. -20V ensured at pulse condition(duty 5%). Note 2: Ensure that the channel temperature does not exceed 175 . Note 3: Limited 80A by package capability. Note 4: Device mounted on a glass-epoxy board (a), Figure 5.1 Note 5: Device mounted on a glass-epoxy board (b), Figure 5.2 Note 6: VDD = 24 V, Tch = 25  (initial), L = 6.3 µH, IAS = 80 A Fig. 5.1 Device Mounted on a Glass-Epoxy Board (a) Note: Fig. 5.2 Device Mounted on a Glass-Epoxy Board (b) This transistor is sensitive to electrostatic discharge and should be handled with care. ©2016-2019 Toshiba Electronic Devices & Storage Corporation 2 2019-10-18 Rev.2.0 TPN1R603PL 6. Electrical Characteristics 6.1. Static Characteristics (Ta = 25  unless otherwise specified) Characteristics Symbol Gate leakage current IGSS VGS = ±20 V, VDS = 0 V Drain cut-off current Drain-source breakdown voltage Drain-source breakdown voltage (Note 7) Min Typ. Max Unit   ±0.1 µA IDSS VDS = 30 V, VGS = 0 V   10 V(BR)DSS ID = 10 mA, VGS = 0 V 30   V(BR)DSX ID = 10 mA, VGS = -20 V 15   Vth VDS = 10 V, ID = 0.3 mA 1.1  2.1 VGS = 4.5 V, ID = 40 A  1.8 2.5 VGS = 10 V, ID = 40 A  1.2 1.6 Gate threshold voltage Drain-source on-resistance Test Condition RDS(ON) V mΩ Note 7: If a reverse bias is applied between gate and source, this device enters V(BR)DSX mode. Note that the drainsource breakdown voltage is lowered in this mode. 6.2. Dynamic Characteristics (Ta = 25  unless otherwise specified) Characteristics Input capacitance Symbol Ciss Test Condition VDS = 15 V, VGS = 0 V, f = 1 MHz Min Typ. Max Unit  2970 3900 pF Reverse transfer capacitance Crss  110 200 Output capacitance Coss  850  Gate resistance rg   0.9 1.4 Ω Switching time (rise time) tr See Fig. 6.2.1  5.3  ns Switching time (turn-on time) ton  15  tf  12  toff  42  Switching time (fall time) Switching time (turn-off time) VDD ≈ 15 V VGS = 0 V/ 10 V ID = 40 A RL = 0.38 Ω RGG = 4.7 Ω RGS = 4.7 Ω Duty ≤ 1 %, tw = 10 µs Fig. 6.2.1 Switching Time Test Circuit 6.3. Gate Charge Characteristics (Ta = 25  unless otherwise specified) Characteristics Symbol Total gate charge (gate-source plus gate-drain) Qg Gate-source charge 1 Qgs1 Gate-drain charge Qgd Gate switch charge QSW Output charge Qoss ©2016-2019 Toshiba Electronic Devices & Storage Corporation Test Condition Min Typ. Max Unit VDD ≈ 15 V, VGS = 10 V, ID = 40 A  41  nC VDD ≈ 15 V, VGS = 4.5 V, ID = 40 A  20  VDD ≈ 15 V, VGS = 10 V, ID = 40 A  8.9   5.4   11   23  VDS = 15 V, VGS = 0 V, f = 1 MHz 3 2019-10-18 Rev.2.0 TPN1R603PL 6.4. Source-Drain Characteristics (Ta = 25  unless otherwise specified) Characteristics Reverse drain current (pulsed) Symbol (Note 8) IDRP (t = 100 µs) Diode forward voltage VDSF Reverse recovery time trr Reverse recovery charge Qrr Test Condition Min Typ. Max Unit    200 A IDR = 80 A, VGS = 0 V   -1.2 V VR = 15 V, IDR = 20 A, VGS = 0 V, -dIDR/dt = 100 A/µs  31  ns  20  nC Note 8: Ensure that the channel temperature does not exceed 175 . 7. Marking Fig. 7.1 Marking ©2016-2019 Toshiba Electronic Devices & Storage Corporation 4 2019-10-18 Rev.2.0 TPN1R603PL 8. Characteristics Curves (Note) Fig. 8.1 ID - VDS Fig. 8.2 ID - VDS Fig. 8.3 ID - VGS Fig. 8.4 VDS - VGS Fig. 8.5 RDS(ON) - ID Fig. 8.6 IDR - VDS ©2016-2019 Toshiba Electronic Devices & Storage Corporation 5 2019-10-18 Rev.2.0 TPN1R603PL Fig. 8.7 V(BR)DSS - Ta Fig. 8.8 Vth - Ta Fig. 8.9 RDS(ON) - Ta Fig. 8.10 Dynamic Input/Output Characteristics Fig. 8.11 Capacitance - VDS Fig. 8.12 Qoss - VDS ©2016-2019 Toshiba Electronic Devices & Storage Corporation 6 2019-10-18 Rev.2.0 TPN1R603PL Fig. 8.13 rth - tw (Guaranteed Maximum) Fig. 8.14 PD - Ta (Guaranteed Maximum) Fig. 8.15 PD - Tc (Guaranteed Maximum) Fig. 8.16 Safe Operating Area (Guaranteed Maximum) Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. ©2016-2019 Toshiba Electronic Devices & Storage Corporation 7 2019-10-18 Rev.2.0 TPN1R603PL Package Dimensions Unit: mm Weight: 0.029 g (typ.) Package Name(s) TOSHIBA: 2-3X1S Nickname: TSON Advance ©2016-2019 Toshiba Electronic Devices & Storage Corporation 8 2019-10-18 Rev.2.0 TPN1R603PL RESTRICTIONS ON PRODUCT USE Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as "TOSHIBA". Hardware, software and systems described in this document are collectively referred to as "Product". • TOSHIBA reserves the right to make changes to the information in this document and related Product without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. 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