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TPS611F

TPS611F

  • 厂商:

    TOSHIBA(东芝)

  • 封装:

  • 描述:

    TPS611F - Silicon NPN Epitaxial Planar - Toshiba Semiconductor

  • 详情介绍
  • 数据手册
  • 价格&库存
TPS611F 数据手册
TPS611(F) TOSHIBA Phototransistor Silicon NPN Epitaxial Planar TPS611(F) Lead(Pb)-Free Photoelectric Counter Various Kinds Of Readers Position Detection • • • • φ5mm epoxy resin package(black) High sensitivity: IL = 120μA(typ.) Half value angle: θ1/2 = ±8°(typ.) Protected from external light by black mold packaging. Unit in mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector−emitter voltage Emitter−Collector voltage Collector current Collector power dissipation Collector power dissipation derating(Ta>25°C) Operating temperature range Storage temperature range Symbol VCEO VECO IC PC ΔPC /°C Topr Tstg Rating 30 5 50 150 −2 −20~75 −30~100 Unit V V mA mW mW/°C °C °C TOSHIBA Weight: 0.3 g (typ.) 0−5C1 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Pin Connection 2 1. Emitter 2. Collector 1 Opto−electrical Characteristics (Ta = 25°C) Characteristics Dark current Light current Collector−emitter saturation voltage Switching time Rise time Fall time Symbol ID (ICEO) IL VCE(sat) tr tf λP Test Condition IF = 24V, E=0 VCE = 3V, E=0.1mW/cm 2 Min ⎯ (Note) 30 ⎯ ⎯ ⎯ ⎯ ⎯ Typ. 0.005 120 0.25 6 6 900 ±8 Max 0.1 ⎯ 0.4 ⎯ ⎯ ⎯ ⎯ Unit μA μA V μs nm ° IC = 15μA, E=0.1mW/cm VCC = 5V, IC = 2mA RL = 100Ω ⎯ ⎯ 2 (Note) Peak sensitivity wavelength Half value angle 1 θ 2 Note: Color temperature = 2870K, standard tungsten lamp 1 2007-10-01 TPS611(F) Precaution Please be careful of the followings. 1. Soldering temperature: 260°C max. Soldering time: 5s max. (Soldering portion of lead: The top portion from the lead stopper.) 2. When the leads is formed, the lead shall be formed at the top portion of the stopper without leaving forming stress to the body of the device. Soldering shall be performed after lead forming. 2 2007-10-01 TPS611(F) Fig.1 Switching time test circuit Input pulse Input TLN110(F) VCC TPS611(F) Output R RL Output pulse 0 tr tf 10% 90% 0 PC – Ta 160 105 ID – Ta E=0 (typ.) VCE = 24V Allowable collector power dissipation PC (mW) 120 10 4 Dark current ID (nA) 0 20 40 60 80 100 80 103 10 2 40 10 0 1 Ambient temperature Ta (°C) IL – E 10 VCE = 3V Ta = 25°C Color temperature = 2870K (typ.) 1 0 −1 0 20 40 60 80 100 Ambient temperature Ta (°C) 5 3 IL – VCE 0.8 Ta = 25°C E = 0.6mW / cm2 (typ.) Light current IL (mA) 1 Light current IL (mA) 0.6 0.5 0.4 0.3 0.2 0.2 0.1 0 0 0.5 0.3 0.4 0.1 0.05 0.03 0.05 0.1 0.3 0.5 1 3 2 5 10 2 4 6 8 10 Radiant incidence E (mW / cm ) Collector-emitter voltage VCE (V) 3 2007-10-01 TPS611(F) Frequency Characteristics (typ.) 12 VCC = 5V Ta = 25°C Light source = TLN110(F) Directional Sensitivity Characteristics (typ.) (dB) 30° 40° 50° 60° 70° 80° 0.8 0.6 0.4 0.2 0 90° 8 4 0 −4 −8 −12 −16 −20 Radiation angle 20° 30° 40° 50° 60° 70° 80° 90° 1.0 10° 0° 10° 20° Ta = 25°C Relative output RL = 100Ω 500Ω 1 kΩ 1 3 5 10 30 50 100 300 1000 Relative sensitivity Frequency f (kHz) Switching Characteristics (typ.) Ta = 25°C Input TLN110(F) VCC 10V R 200 tr (RL=10kΩ) 100 50 30 tf (RL=10kΩ) Output RL 50 Output pulse Input pulse td tr tf 30 Coupling Characteristics With TLN110(F) Switching time (µs) (mA) 10 90% 10% Collector current IC TLN110(F) IE = 50mW / sr 5 3 10 Ta = 25°C TPS611(F) Using sample 1 :I = 99.3μA at VCE = 3V L E = 0.1mW / cm2 0.5 0.3 d 5 IC 3V 30 tr (RL=1kΩ) 10 tf (RL=1kΩ) td (RL=10kΩ) 3 td (RL=100Ω,1kΩ) tf (RL=100Ω) tr (RL=100Ω) 1 0.03 0.05 0.1 0.3 0.5 5 TLN110(F) 1 3 5 10 0.1 1 3 TPS611(F) 10 30 50 100 200 Collector current IC (mA) Distance d (mm) 4 2007-10-01 TPS611(F) Spectral Response 120 Ta = 25°C (typ.) 100 (%) Relative sensitivity 80 60 40 20 0 0 200 400 600 800 1000 1200 Wavelength λ (nm) 5 2007-10-01 TPS611(F) RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN GENERAL • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2007-10-01
TPS611F
1. 物料型号: - 型号为TPS611(F),由东芝(TOSHIBA)生产。

2. 器件简介: - TPS611(F)是一款光晶体管,采用硅NPN外延平面工艺制造,具有高灵敏度和较小的半值角。封装为φ5mm黑色环氧树脂包封,可有效防止外部光线干扰。

3. 引脚分配: - 引脚1:发射极(Emitter) - 引脚2:集电极(Collector)

4. 参数特性: - 绝对最大额定值: - 集电极-发射极电压(VCEO):30V - 发射极-集电极电压(VECO):5V - 集电极电流(Ic):50mA - 集电极功耗(Pc):150mW - 集电极功耗耗散(APc/°C):-2mW/°C(Ta>25°C) - 工作温度范围(Topr):-20~75°C - 存储温度范围(Tstg):-30~100°C - 光电特性(Ta=25°C): - 暗电流(ID, ICEO):0.005~0.1A - 光电流(IF):30~120μA(VcE=3V, E=0.1mW/cm²) - 集电极-发射极饱和电压(VCE(sat)):0.25~0.4V(Ic=15mA, E=0.1mW/cm²) - 开关时间:上升时间(tr)6μs,下降时间(tf)6μs - 峰值灵敏度波长(Ap):900nm - 半值角:±8°

5. 功能详解: - TPS611(F)光晶体管可用于各种阅读器的位置检测,具有高灵敏度和较小的半值角,适用于精确的位置检测。

6. 应用信息: - 适用于一般电子应用,如计算机、个人设备、办公设备、测量设备、工业机器人、家用电器等。不适用于需要极高质量和/或可靠性的设备,或其故障可能导致人员伤亡的设备,如原子能控制仪器、飞机或宇宙飞船仪器、交通信号仪器、燃烧控制仪器、医疗仪器、各种安全设备等。

7. 封装信息: - 封装为φ5mm黑色环氧树脂包封,重量约为0.3g。
TPS611F 价格&库存

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