TPS616_07

TPS616(F) TOSHIBA Phototransistor Silicon NPN Epitaxial Planar TPS616(F) Lead(Pb)-Free Floppy Disk Drive VCR Position Detector Of Home Electric Equipment Opto-electronic Switch Unit in mm • • • • φ3.1mm epoxy resin package. (black) Light current: IL = 10μA (min.) at E = 0.1mW/cm2 Half value angle: θ1/2 = ±30° (typ.) Protected from external light by black mold packaging. Absolute Maximum Ratings (Ta = 25°C) Characteristic Collector-emitter voltage Emitter-collector voltage Collector current Collector power dissipation Collector power dissipation derating (Ta > 25°C) Operating temperature range Storage temperature range Symbol VCEO VECO IC PC ΔPC/°C Topr Tstg Rating 30 5 20 75 −1 −30~85 −30~100 Unit V V mA mW mW/°C °C °C 2 TOSHIBA 0−3D1 Weight: 0.12g (typ.) Pin Connection 1 1 . Emitter 2 . Collector Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2007-10-01 TPS616(F) Opto-electrical Characteristics (Ta = 25°C) Characteristic Dark current Light current Collector-emitter saturation voltage peak sensitivity wavelength Half value angle Switching time Rise time Fall time Symbol ID(ICEO) Test Condition VCE = 24V 2 Min. ⎯ 10 ⎯ ⎯ ⎯ ⎯ ⎯ Typ. 0.01 ⎯ 0.2 900 ±30 9 10 Max. 0.1 75 0.4 ⎯ ⎯ ⎯ ⎯ Unit μA μA V nm ° μs VCE = 3V, E = 0.1mW / cm IL (Note 2) (Note 1) VCE(sat) λP 1 θ 2 IC = 5μA, E = 0.1mW / cm ⎯ ⎯ VCC = 10V,IC = 1mA RL = 1kΩ 2 (Note 1) tr tf Note 1: Color temperature = 2870K,standard tungsten lamp. Note 2: IL classification A: 10~25μA, B: 17~42.5μA, C: 30~75μA, AB: 10~42.5μA, BC: 17~75μA Precaution Please be careful of the followings. 1. Soldering temperature: 260°C max. Soldering time: 3s max. (Soldering portion of lead: Above 1.5mm from the body of the device) 2. If the lead is formed, the lead should be formed at a distance of 2mm from the body of the device. Soldering shall be performed after lead forming. 2 2007-10-01 TPS616(F) Fig.1 Switching time test circuit Input TLN119(F) (GaAs LED) R VCC TPS616(F) Output RL Output pulse 0 tr 10% tf Input pulse 0 90% ID – Ta PC – Ta 80 VCE = 24 V 1 E=0 (Typ.) Allowable collector power dissipation PC (mW) Dark current ID (μA) 60 10-1 40 10-2 20 0 0 20 40 60 80 100 10 -3 0 20 40 60 80 100 Ambient temperature Ta (°C) Ambient temperature Ta (°C) IL – E 300 VCE = 3 V Ta = 25°C Color temperature = 2870K (Typ.) Ta = 25°C 250 IL – VCE 0.6 (Typ.) 100 0.5 Light current IL (μA) Light current IL (μA) 200 0.4 150 0.3 100 0.2 E=0.1mW / cm2 50 30 10 5 3 50 1 0.01 0.03 0.05 0.1 0.3 0.5 1 0 0 2 4 6 8 10 Radiant incidence E (mW / cm2) Collector-emitter voltage VCE (V) 3 2007-10-01 TPS616(F) Directional Sensitivity Characteristic (Typ.) (Ta = 25°C) Frequency Characteristics (Typ.) 12 8 4 0 RL=100Ω -4 -8 -12 -16 -20 1 10kΩ 5 kΩ 1 kΩ 500Ω VCC = 5 V Ta = 25°C Light source = TLN119(F) (GaAs LED) 20° 30° 40° 50° 60° 70° 80° 90° 1.0 10° 0° 10° 20° 30° 40° 50° 60° 70° 80° 90° Relative output (dB) Radiation angle 0.8 0.6 0.4 0.2 0 3 5 10 30 50 100 300 500 1000 Relative sensitivity Frequency f (kHz) Switching characteristics (Typ.) 3000 Ta=25°C Vcc= 10V Output pulse 90% TLN119(F) (GaAs LED) R R L Output Input pulse 90% 10% Coupling Characteristics With TLN119(F) Input 1000 10% 500 300 TLN119(F) IE=3.0mW/sr (μA) 200 tr tf 1.5 100 50 30 Ta = 25°C TPS615(F) Using sample Switching time (μs) 50 30 tf(RL=10kΩ) tf(RL=1kΩ) 10 5 3 tr(RL=100Ω) 1 0.02 0.05 0.1 0.3 0.5 1 3 5 tr(RL=1kΩ) tf(RL=100Ω) Collector current IC 100 tr(RL=10kΩ) 0.5 10 5 3 :IL = 28.1μA at VCE = 3V E = 0.1mW/cm2 I 3V IC C 3V 1 1 d TLN119 TLN119(F) d TPS616 TPS615(F) 3 5 10 30 50 100 200 Collector current IC (mA) Distance d (mm) 4 2007-10-01 TPS616(F) Spectral Response 120 Ta = 25°C 100 (Typ.) (%) Relative sensitivity 80 60 40 20 0 0 200 400 600 800 1000 1200 Wavelength λ (nm) 5 2007-10-01 TPS616(F) RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2007-10-01