TPWR6003PL,L1Q

TPWR6003PL MOSFETs Silicon N-channel MOS (U-MOS-H) TPWR6003PL 1. Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators 2. Features (1) High-speed switching (2) Small gate charge: QSW = 30 nC (typ.) (3) Small output charge: Qoss = 81.3 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 0.36 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (6) Enhancement mode: Vth = 1.1 to 2.1 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain DSOP Advance Start of commercial production ©2016-2019 Toshiba Electronic Devices & Storage Corporation 1 2016-03 2019-10-21 Rev.4.0 TPWR6003PL 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Drain-source voltage Gate-source voltage Rating Unit V VDSS 30 (Note 1) VGSS ±20 ID 150 Drain current (DC) (Tc = 25 ) (Bottom drain) (Note 2) Drain current (DC) (Silicon limit) (Note 2), (Note 3) ID 412 Drain current (pulsed) (t = 100 µs) (Note 2) IDP 500 PD 170 Power dissipation (Tc = 25 ) (Bottom drain) A W Power dissipation (Note 4) PD 3.0 Power dissipation (Note 5) PD 0.96 Single-pulse avalanche energy (Note 6) EAS 468 mJ Single-pulse avalanche current (Note 6) IAS 120 A  Channel temperature Tch 175 Storage temperature Tstg -55 to 175 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 5. Thermal Characteristics Characteristics Symbol Max Unit /W Channel-to-case thermal resistance Bottom drain (Tc = 25 ) Rth(ch-c) 0.88 Channel-to-case thermal resistance Top source (Tc = 25 ) Rth(ch-c) 0.93 Channel-to-ambient thermal resistance (Note 4) Rth(ch-a) 50 Channel-to-ambient thermal resistance (Note 5) Rth(ch-a) 156 Note 1: +20 V/-16 V ensured at DC condition. -20 V ensured at pulse condition (duty 5 %). Note 2: Ensure that the channel temperature does not exceed 175 . Note 3: Limited 150A by package capability. Note 4: Device mounted on a glass-epoxy board (a), Figure 5.1 Note 5: Device mounted on a glass-epoxy board (b), Figure 5.2 Note 6: VDD = 24 V, Tch = 25  (initial), L = 0.025mH, IAS = 120 A Fig. 5.1 Device Mounted on a Glass-Epoxy Board (a) Note: Fig. 5.2 Device Mounted on a Glass-Epoxy Board (b) This transistor is sensitive to electrostatic discharge and should be handled with care. ©2016-2019 Toshiba Electronic Devices & Storage Corporation 2 2019-10-21 Rev.4.0 TPWR6003PL 6. Electrical Characteristics 6.1. Static Characteristics (Ta = 25  unless otherwise specified) Characteristics Symbol Gate leakage current Test Condition IGSS VGS = ±20 V, VDS = 0 V Drain cut-off current Min Typ. Max Unit   ±0.1 µA IDSS VDS = 30 V, VGS = 0 V   10 Drain-source breakdown voltage V(BR)DSS ID = 10 mA, VGS = 0 V 30   Drain-source breakdown voltage V(BR)DSX ID = 10 mA, VGS = -20 V 15   Vth VDS = 10 V, ID = 1.0 mA 1.1  2.1 VGS = 4.5 V, ID = 50 A  0.55 0.84 VGS = 10 V, ID = 50 A  0.36 0.60 Min Typ. Max Unit  7700 10000 pF Gate threshold voltage Drain-source on-resistance RDS(ON) V mΩ 6.2. Dynamic Characteristics (Ta = 25  unless otherwise specified) Characteristics Symbol Input capacitance Test Condition Ciss VDS = 15 V, VGS = 0 V, f = 1 MHz Reverse transfer capacitance Crss  220  Output capacitance Coss  2720   0.6 1.1 Ω  12  ns Gate resistance rg Switching time (rise time) tr Switching time (turn-on time) ton  36  tf  10  toff  100  Switching time (fall time) Switching time (turn-off time) See Fig. 6.2.1 VDD ≈ 15 V VGS = 0 V/10 V ID = 50 A RL = 0.3 Ω RGG = 4.7 Ω RGS = 4.7 Ω Duty ≤ 1 %, tw = 10 µs Fig. 6.2.1 Switching Time Test Circuit 6.3. Gate Charge Characteristics (Ta = 25  unless otherwise specified) Characteristics Symbol Total gate charge (gate-source plus gate-drain) Test Condition Qg Gate-source charge 1 Qgs1 Gate-drain charge Qgd Gate switch charge QSW Output charge Qoss Min Typ. Max Unit VDD ≈ 15 V, VGS = 10 V, ID = 50 A  110  nC VDD ≈ 15 V, VGS = 4.5 V, ID = 50 A  52  VDD ≈ 15 V, VGS = 10 V, ID = 50 A  24   16   30   81.3  VDS = 15 V, VGS = 0 V, f = 1 MHz 6.4. Source-Drain Characteristics (Ta = 25  unless otherwise specified) Characteristics Reverse drain current (pulsed) Symbol (Note 7) Test Condition Min Typ. Max Unit  500 A IDRP t = 100 µs  Diode forward voltage VDSF IDR = 150 A, VGS = 0 V   -1.2 V Reverse recovery time trr  59  ns Reverse recovery charge Qrr VDD = 15 V, IDR = 37.5 A, VGS = 0 V, -dIDR/dt = 100 A/µs  70  nC Note 7: Ensure that the channel temperature does not exceed 175 . ©2016-2019 Toshiba Electronic Devices & Storage Corporation 3 2019-10-21 Rev.4.0 TPWR6003PL 7. Marking Fig. 7.1 Marking ©2016-2019 Toshiba Electronic Devices & Storage Corporation 4 2019-10-21 Rev.4.0 TPWR6003PL 8. Characteristics Curves (Note) Fig. 8.1 ID - VDS Fig. 8.2 ID - VDS Fig. 8.3 ID - VGS Fig. 8.4 VDS - VGS Fig. 8.5 RDS(ON) - ID Fig. 8.6 IDR - VDS ©2016-2019 Toshiba Electronic Devices & Storage Corporation 5 2019-10-21 Rev.4.0 TPWR6003PL Fig. 8.7 V(BR)DSS - Ta Fig. 8.8 Vth - Ta Fig. 8.9 RDS(ON) - Ta Fig. 8.10 Dynamic Input/Output Characteristics Fig. 8.11 Capacitance - VDS Fig. 8.12 Qoss - VDS ©2016-2019 Toshiba Electronic Devices & Storage Corporation 6 2019-10-21 Rev.4.0 TPWR6003PL Fig. 8.13 rth - tw (Bottom drain) (Guaranteed Maximum) Fig. 8.14 rth - tw (Top source) (Guaranteed Maximum) Fig. 8.16 PD - Tc (Bottom drain) (Guaranteed Maximum) Fig. 8.15 PD - Ta (Guaranteed Maximum) ©2016-2019 Toshiba Electronic Devices & Storage Corporation 7 2019-10-21 Rev.4.0 TPWR6003PL Fig. 8.17 Safe Operating Area (Guaranteed Maximum) Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. ©2016-2019 Toshiba Electronic Devices & Storage Corporation 8 2019-10-21 Rev.4.0 TPWR6003PL Package Dimensions Unit: mm Weight: 0.104 g (typ.) Package Name(s) TOSHIBA: 2-5S1A Nickname: DSOP Advance ©2016-2019 Toshiba Electronic Devices & Storage Corporation 9 2019-10-21 Rev.4.0 TPWR6003PL RESTRICTIONS ON PRODUCT USE Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as "TOSHIBA". Hardware, software and systems described in this document are collectively referred to as "Product". • TOSHIBA reserves the right to make changes to the information in this document and related Product without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. 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