TW070J120B,S1Q

TW070J120B MOSFETs Silicon Carbide N-Channel MOS TW070J120B 1. Applications • Switching Voltage Regulators 2. Features (1) Chip design of 2nd generation (Built-in SiC schottky barrier diode) (2) Low diode forward voltage: VDSF = -1.35 V (typ.) (3) High voltage: VDSS = 1200 V (4) Low drain-source on-resistance: RDS(ON) = 70 mΩ (typ.) (5) Less susceptible to malfunction due to high threshold voltage: Vth = 4.2 to 5.8 V (VDS = 10 V, ID = 20 mA) (6) Enhancement mode. 3. Packaging and Internal Circuit 1: Gate 2: Drain (heatsink) 3: Source TO-3P(N) Start of commercial production ©2020 Toshiba Electronic Devices & Storage Corporation 1 2020-08 2020-08-05 Rev.2.0 TW070J120B 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit V Drain-source voltage VDSS 1200 Gate-source voltage VGSS +25/-10 Drain current (DC) ( Tc = 25  ) (Note 1) ID 36.0 Drain current (DC) ( Tc = 100  ) (Note 1) ID 25.5 (Note 1) IDP 72 PD 272 W  Drain current (pulsed) Power dissipation ( Tc = 25  ) A Channel temperature Tch 175 Storage temperature Tstg -55 to 175 Mounting torque TOR 0.8 Note: Nm Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 5. Thermal Characteristics Characteristics Symbol Max Unit Channel-to-case thermal resistance Rth(ch-c) 0.55 /W Channel-to-ambient thermal resistance Rth(ch-a) 50 Note 1: Ensure that the channel temperature does not exceed 175 . Note: This transistor is sensitive to electrostatic discharge and should be handled with care. It should be used for switching applications. ©2020 Toshiba Electronic Devices & Storage Corporation 2 2020-08-05 Rev.2.0 TW070J120B 6. Electrical Characteristics 6.1. Static Characteristics (Ta = 25  unless otherwise specified) Characteristics Symbol Test Condition Min Typ. Max Unit µA Gate leakage current IGSS VGS = +25/-10 V, VDS = 0 V   ±0.5 Drain cut-off current IDSS VDS = 1200 V, VGS = 0 V  0.2 10 Ta = 175 , VDS = 1200 V, VGS = 0 V  3.0  1200   Drain-source breakdown voltage Gate threshold voltage V(BR)DSS (Note 2) Drain-source on-resistance Vth RDS(ON) ID = 1 mA, VGS = 0 V V VDS = 10 V, ID = 20 mA 4.2  5.8 VGS = 20 V, ID = 18 A  70 90 Ta = 150 , VGS = 20 V, ID = 18 A  87  Min Typ. Max Unit  1680  pF  8   109  mΩ Note 2: Please be sure to IGSS (VGS = 25 V) test before the Vth test. 6.2. Dynamic Characteristics (Ta = 25  unless otherwise specified) Characteristics Symbol Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss Coss stored energy Eoss Test Condition VDS = 800 V, VGS = 0 V, f = 100 kHz  42  µJ VDS = OPEN, f = 100 kHz  3.5  Ω See Fig. 6.5.1 See Fig. 6.5.2  17  ns  7  td(off)  40  tf  35  Turn-on switching loss Eon  0.380  Turn-off switching loss Eoff  0.035  Gate resistance rg Turn-on delay time td(on) Switching time (rise time) tr Turn-off delay time Switching time (fall time) mJ 6.3. Gate Charge Characteristics (Ta = 25  unless otherwise specified) Characteristics Symbol Total gate charge (gate-source plus gate-drain) Qg Test Condition VDD ≈ 800 V, VGS = 20 V, ID = 18 A Min Typ. Max Unit  67  nC Gate-source charge 1 Qgs1  13  Gate-drain charge Qgd  25  6.4. Source-Drain Characteristics (Ta = 25  unless otherwise specified) Characteristics Symbol Diode forward current (DC) (Note 3) IF Diode forward current (pulsed) (Note 3) IFP Diode forward voltage VDSF Reverse recovery time trr Reverse recovery charge Qrr Peak reverse recovery current Irr Test Condition Min Typ. Max Unit Tc = 25    36 A Tc = 100    29.6 Tc = 25    72 Tc = 100    32 IDR = 10 A, VGS = -5 V  -1.35 -1.80 Ta = 150 , IDR = 10 A, VGS = -5 V  -1.70  IDR = 10 A, VGS = 0 V, VDD = 800 V, -dIDR/dt = 1000 A/µs  22  ns  170  nC  15  A V Note 3: Ensure that the channel temperature does not exceed 175 . ©2020 Toshiba Electronic Devices & Storage Corporation 3 2020-08-05 Rev.2.0 TW070J120B 6.5. Test Circuit and Timing Diagram VGS1 = -5 V RG1 = 0 Ω VGS2 = -5 V / +20 V (pulsed) RG2 = 4.7 Ω VDD ≈ 800 V ID = 10 A L = 100 µH Fig. 6.5.1 Switching Time Test Circuit Fig. 6.5.2 Timing Diagram ©2020 Toshiba Electronic Devices & Storage Corporation 4 2020-08-05 Rev.2.0 TW070J120B 7. Marking (Note) Fig. 7.1 Marking Note: A line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. ©2020 Toshiba Electronic Devices & Storage Corporation 5 2020-08-05 Rev.2.0 TW070J120B 8. Characteristics Curves (Note) Fig. 8.1 ID - VDS Fig. 8.2 ID - VDS Fig. 8.3 ID - VGS Fig. 8.4 Vth - Ta Fig. 8.5 RDS(ON) - VGS Fig. 8.6 RDS(ON) - ID ©2020 Toshiba Electronic Devices & Storage Corporation 6 2020-08-05 Rev.2.0 TW070J120B Fig. 8.7 RDS(ON) - ID Fig. 8.8 RDS(ON) - Ta Fig. 8.9 VDSS - Ta Fig. 8.10 Dynamic Input/Output Characteristics Fig. 8.11 C - VDS Fig. 8.12 Eoss - VDS ©2020 Toshiba Electronic Devices & Storage Corporation 7 2020-08-05 Rev.2.0 TW070J120B Fig. 8.13 PD - Tc (Guaranteed Maximum) Fig. 8.14 IDR - VDS Fig. 8.15 Rth(ch-c) - tw (Guaranteed Maximum) Fig. 8.16 Safe Operating Area (Guaranteed Maximum) Note: Fig. 8.17 Reverse Safe Operating Area (Guaranteed Maximum) The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. ©2020 Toshiba Electronic Devices & Storage Corporation 8 2020-08-05 Rev.2.0 TW070J120B Package Dimensions Unit: mm Weight: 4.6 g (typ.) Package Name(s) TOSHIBA: 2-16C1S Nickname: TO-3P(N) ©2020 Toshiba Electronic Devices & Storage Corporation 9 2020-08-05 Rev.2.0 TW070J120B RESTRICTIONS ON PRODUCT USE Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as "TOSHIBA". Hardware, software and systems described in this document are collectively referred to as "Product". • TOSHIBA reserves the right to make changes to the information in this document and related Product without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. 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