TS1GSDM80

TS128M~2GSDM80 Description miniSD Card is a compact, slim and high capacity storage media with copyright protection. Designed in advanced SD specification Ver.1.1, TS2GSDM80 now reaches a new performance milestone. Based on 0.18um process controller and high quality SLC (Single-Level-Cell) NAND Flash chip, TS128M~ 2GSDM80 can provide high performance ,low power consumption yet excellent reliability. 128M~2GB miniSD Memory Card Features • Storage Capacity: 2GB(2GX8bit,2KB/page ) • Operating Voltage: 2.7 ~ 3.6V • Operating Temperature: -25 ~ 85°C • Maximum Data Transfer Rate: Read:12MB/sec,Write:11MB/sec • Insertion/removal durability: 10,000 cycles • Fully compatible with SD card spec. v1.1 • Forward compatibility to MultiMediaCard Version 2.11 • Supports Copy Protection for Recorded Media(CPRM) for music and other commercial media • Form Factor: 21.5mm x 20mm x 1.4mm Placement 9 1 2 3 10 11 4 5 6 7 8 Pin Definition Front Back Pin Name Type Description No. 1 CD/DAT3 I/O/PP3 Card Detect/Data Line [Bit3] 2 3 4 5 6 7 8 9 10 11 CMD VSS1 VDD CLK VSS2 DAT0 DAT1 DAT2 NC4 NC4 PP S S I S Command/Response Supply voltage ground Supply voltage Clock Supply voltage ground I/O/PP Data Line [Bit0] I/O/PP Data Line [Bit1] I/O/PP Data Line [Bit2] I/O/PP For Future Use I/O/PP For Future Use Transcend Information Inc. 1 TS128M~2GSDM80 Architecture 128M~2GB miniSD Memory Card Transcend Information Inc. 2 TS128M~2GSDM80 Bus Operating Conditions • General Parameter Peak voltage on all lines All Inputs Input Leakage Current All Outputs Output Leakage Current -10 10 -10 10 128M~2GB miniSD Memory Card Symbol Min. -0.3 Max. VDD+0.3 Unit V µA µA Remark • Power Supply Voltage Parameter Supply voltage Supply voltage specified in OCR register Supply voltage differentials (VSS1, VSS2) Power up time Symbol VDD Min. 2.0 2.7 -0.3 Max. 3.6 3.6 0.3 250 Unit V V V ms Remark CMD0, 15,55,ACMD41 commands Except CMD0, 15,55, ACMD41 commands From 0v to VDD Min. Note. The current consumption of any card during the power-up procedure must not exceed 10 mA. • Bus Signal Line Load The total capacitance CL the CLK line of the SD Memory Card bus is the sum of the bus master capacitance CHOST, the bus capacitance CBUS itself and the capacitance CCARD of each card connected to this line: CL = CHOST + CBUS + Ν*CCARD Where N is the number of connected cards. Requiring the sum of the host and bus capacitances not to exceed 30 pF for up to 10 cards, and 40 pF for up to 30 cards, the following values must not be exceeded: Parameter Bus signal line capacitance Single card capacitance Maximum signal line inductance Pull-up resistance inside card (pin1) Symbol CL CCARD RDAT3 Min. Max. 100 10 16 Unit pF pF nH kΩ Remark fPP ≤ 20 MHz, 7 cards fPP ≤ 20 MHz May be used for card detection 10 90 Note that the total capacitance of CMD and DAT lines will be consist of CHOST, CBUS and one CCARD only since they are connected separately to the SD Memory Card host. Parameter Pull-up resistance Bus signal line capacitance Symbol RCMD, RDAT CL Min. 10 Max. 100 250 Unit kΩ pF Remark To prevent bus floating fPP ≤ 5 MHz, 21 cards Transcend Information Inc. 3 TS128M~2GSDM80 • Bus Signal Levels 128M~2GB miniSD Memory Card As the bus can be supplied with a variable supply voltage, all signal levels are related to the supply voltage. To meet the requirements of the JEDEC specification JESD8-1A, the card input and output voltages shall be within the following specified ranges for any VDD of the allowed voltage range: Parameter Output HIGH voltage Output LOW voltage Input HIGH voltage Input LOW voltage Symbol VOH VOL VIH VIL Min. 0.75* VDD Max. 0.125* VDD Unit V V V V Remark IOH = -100 μA @VDD min IOL = -100 μA @VDD min 0.625* VDD VSS – 0.3 VDD + 0.3 0.25* VDD Transcend Information Inc. 4 TS128M~2GSDM80 • Bus Timing (Default) 128M~2GB miniSD Memory Card Parameter Clock frequency Data Transfer Mode Clock frequency Identification Mode (The low freq. is required for MultiMediaCard compatibility.) Clock low time Clock high time Clock rise time Symbol fPP fOD Min 0 0 Max. 25 400 Unit MHz KHz Remark CL ≤ 100 pF, (7 cards) CL ≤ 250 pF, (21 cards) Clock CLK (All values are referred to min (VIH) and max (VIL) tWL tWH tTLH 5 10 50 10 50 10 ns ns ns ns ns CL ≤ 100 pF, (7 cards) CL ≤ 250 pF, (21 cards) CL ≤ 100 pF, (7 cards) CL ≤ 250 pF, (21 cards) CL ≤ 100 pF, (7 cards) Transcend Information Inc. TS128M~2GSDM80 50 Clock fall time Inputs CMD, DAT (referenced to CLK) Input set-up time Input hold time Outputs CMD, DAT (referenced to CLK) Output Delay time during Data Transfer Mode Output Delay time during Identification Mode tODLY tODLY 0 0 14 50 tISU tIH 5 5 tTHL 10 50 128M~2GB miniSD Memory Card ns ns ns ns ns ns ns CL ≤ 250 pF, (21 cards) CL ≤ 100 pF, (7 cards) CL ≤ 250 pF, (21 cards) CL ≤ 25 pF, (1 cards) CL ≤ 25 pF, (1 cards) CL ≤ 25 pF, (1 cards) CL ≤ 25 pF, (1 cards) Transcend Information Inc. 6 TS128M~2GSDM80 • Bus Timing (High Speed Mode) 128M~2GB miniSD Memory Card Parameter Clock frequency Data Transfer Mode Clock low time Clock high time Clock rise time Clock fall time Inputs CMD, DAT (referenced to CLK) Input set-up time Input hold time Outputs CMD, DAT (referenced to CLK) Symbol fPP tWL tWH tTLH tTHL tISU tIH Min 0 7 7 Max. 50 Unit MHz ns ns Remark Clock CLK (All values are referred to min (VIH) and max (VIL) 3 3 6 2 ns ns ns ns Transcend Information Inc. 7 TS128M~2GSDM80 Output Delay time during Data Transfer Mode Output Hold time Total System capacitance for each line tODLY tOH CL 2.5 40 14 128M~2GB miniSD Memory Card ns ns pF Reliability and Durability Temperature Operation: -25°C / 85°C (Target spec) Storage: -40°C (168h) / 85°C (500h) Junction temperature: max. 95°C Operation: 25°C / 95% rel. humidity Storage: 40°C / 93% rel. hum./500h Salt Water Spray: 3% NaCl/35C; 24h acc. MIL STD Method 1009 10.000 mating cycles; 10N 0.15N.m or +/-2.5 deg 1.5m free fall UV: 254nm, 15Ws/cm² according to ISO 7816-1 No warp page; no mold skin; complete form; no cavities surface smoothness