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Description
Transcend High Capacity miniSD Card series are specifically designed to meet the High Capacity, High Definition Audio and Video requirement for the latest Digital Cameras, DV Recorders, Mobile Phones, etc,. The new defined Speed Class enables the host to support AV applications to perform real time recording to the miniSD memory card.
4GB High Capacity miniSD Card Features
• ROHS compliant product. • Card Lid material: PC (comply with UL94,Flame Class:HB) • Operating Voltage: 2.7 ~ 3.6V • Operating Temperature: -25 ~ 85°C • Durability: 10,000 insertion/removal cycles • Compatible with SD Specification Ver. 2.0 • Comply with SD File System Specification Ver. 2.0 • Mechanical Write Protection Switch • Supports Speed Class Specification Class 2 • Supports Copy Protection for Recorded Media(CPRM) for SD-Audio • Seamless compatibility with SDMI-compliant digital audio devices
Placement
9 1 2 3 10 11 4 5 6 7 8
Front
Back
• Form Factor: 21.5mm x 20mm x 1.4mm
Pin Name Type Description No. 1 CD/DAT3 I/O/PP3 Card Detect/Data Line [Bit3] 2 3 4 5 6 7 8 9 10 11
CMD VSS1 VDD CLK VSS2 DAT0 DAT1 DAT2 NC4 NC
4
PP S S I S
Command/Response Supply voltage ground Supply voltage Clock Supply voltage ground
I/O/PP Data Line [Bit0] I/O/PP Data Line [Bit1] I/O/PP Data Line [Bit2] I/O/PP For Future Use I/O/PP For Future Use
Pin Definition
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4GB High Capacity miniSD Card
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P/N Information
4GB High Capacity miniSD Card
Picture
Transcend P/N Speed Class(1) Total Area Bytes User Area Bytes User Area Sectors Read Speed (Min.)(2) Write Speed (Min.) MTBF File System Weight (g)
(2)
TS4GSDMHC CLASS 2 4,029,677,568 4,021,288,960 7,854,080 13 MB/s 2 MB/s 10,000 > 400,000hr FAT32 2g
Program/Erase Cycles(Min.)
(1) Speed Class is determined by TestMatrix Compliance Test, 2.8S (2) Test Environment: Processor:Intel Celeron 2.0GHz Mainboard:MSI 865G Memory: Transcend DDR266 256M Card reader: Genesys GL-819 (support SD2.0) Program: FDbench 1.01
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Architecture
4GB High Capacity miniSD Card
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Bus Operating Conditions • General
Parameter
Peak voltage on all lines All Inputs Input Leakage Current All Outputs Output Leakage Current -10 10 -10 10
4GB High Capacity miniSD Card
Symbol
Min.
-0.3
Max.
VDD+0.3
Unit
V µA µA
Remark
• Power Supply Voltage
Parameter
Supply voltage Output High Voltage Output Low Voltage Input High Voltage Input Low Voltage Power up time
Symbol
VDD VOH VOL VIH VIL
Min.
2.7 0.75* VDD
Max.
3.6 0.125* VDD
Unit
V V V V V ms
Remark
IOH=-100uA@VDD Min. IOL=100uA@VDD Min.
0.625* VDD VDD+0.3 VSS-0.3 0.25* VDD 250
From 0v to VDD Min.
• Current Consumption
The current consumption is measured by averaging over 1 second. ‧ Before first command: Maximum 15 mA ‧ During initialization: Maximum 100 mA ‧ Operation in Default Mode: Maximum 100 mA ‧ Operation in High Speed Mode: Maximum 200 mA ‧ Operation with other functions: Maximum 500 mA.
• Bus Signal Line Load
The total capacitance CL the CLK line of the SD Memory Card bus is the sum of the bus master capacitance CHOST, the bus capacitance CBUS itself and the capacitance CCARD of each card connected to this line: CL = CHOST + CBUS + Ν*CCARD Where N is the number of connected cards.
Parameter
Pull-up resistance Bus signal line capacitance
Symbol
RCMD RDAT CL
Min.
10
Max.
100 40
Unit
kΩ pF
Remark
To prevent bus floating 1 card CHOST+CBUS shall not exceed 30 pF
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Single card capacitance Maximum signal line inductance Pull-up resistance inside card (pin1) RDAT3 10 CCARD 10 16 90
4GB High Capacity miniSD Card
pF nH kΩ fPP ≤ 20 MHz May be used for card detection
Note that the total capacitance of CMD and DAT lines will be consist of CHOST, CBUS and one CCARD only because they are connected separately to the SD Memory Card host. Host should consider total bus capacitance for each signal as the sum of CHOST, CBUS, and CCARD, these parameters are defined by per signal. The host can determine CHOST and CBUS so that total bus capacitance is less than the card estimated capacitance load (CL=40 pF). The SD Memory Card guarantees its bus timing when total bus capacitance is less than maximum value of CL (40 pF).
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• Bus Signal Levels
4GB High Capacity miniSD Card
As the bus can be supplied with a variable supply voltage, all signal levels are related to the supply voltage.
To meet the requirements of the JEDEC specification JESD8-1A and JESD8-7, the card input and output voltages shall be within the following specified ranges for any VDD of the allowed voltage range:
Parameter
Output HIGH voltage Output LOW voltage Input HIGH voltage Input LOW voltage
Symbol
VOH VOL VIH VIL
Min.
0.75* VDD
Max.
0.125* VDD
Unit
V V V V
Remark
IOH = -100 μA @VDD min IOL = -100 μA @VDD min
0.625* VDD VSS – 0.3
VDD + 0.3 0.25* VDD
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• Bus Timing
4GB High Capacity miniSD Card
Parameter
Clock frequency Data Transfer Mode Clock frequency Identification Mode Clock low time Clock high time Clock rise time Clock fall time Inputs CMD, DAT (referenced to CLK) Input set-up time Input hold time Outputs CMD, DAT (referenced to CLK)
Symbol
fPP fOD tWL tWH tTLH tTHL tISU tIH 8
Min
0 0(1)/100 10 10
Max.
25 400
Unit
MHz KHz ns ns
Remark
CCARD ≤ 10 pF, (1 card) CCARD ≤ 10 pF, (1 card) CCARD ≤ 10 pF, (1 card) CCARD ≤ 10 pF, (1 card) CCARD ≤ 10 pF, (1 card) CCARD ≤ 10 pF, (1 card) CCARD ≤ 10 pF, (1 card) CCARD ≤ 10 pF, (1 card)
Clock CLK (All values are referred to min (VIH) and max (VIL)
10 10 5 5
ns ns ns ns
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Output Delay time during Data Transfer Mode tODLY 0 14
4GB High Capacity miniSD Card
ns CL ≤ 40 pF, (1 card)
Output Delay time during Identification Mode tODLY 0 50 ns CL ≤ 40 pF, (1 card) (1) 0 Hz means to stop the clock. The given minimum frequency range is for cases were continues clock is required
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• Bus Timing (High Speed Mode)
4GB High Capacity miniSD Card
Parameter
Clock frequency Data Transfer Mode Clock low time Clock high time Clock rise time Clock fall time Inputs CMD, DAT (referenced to CLK) Input set-up time Input hold time Outputs CMD, DAT (referenced to CLK)
Symbol
fPP tWL tWH tTLH tTHL tISU tIH
Min
0 7 7
Max.
50
Unit
MHz ns ns
Remark
CCARD ≤ 10 pF, (1 card) CCARD ≤ 10 pF, (1 card) CCARD ≤ 10 pF, (1 card) CCARD ≤ 10 pF, (1 card) CCARD ≤ 10 pF, (1 card) CCARD ≤ 10 pF, (1 card) CCARD ≤ 10 pF, (1 card)
Clock CLK (All values are referred to min (VIH) and max (VIL)
3 3 6 2
ns ns ns ns
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Output Delay time during Data Transfer Mode Output Hold time
1
4GB High Capacity miniSD Card
14 2.5 40 ns ns pF CL ≤ 40 pF, (1 card) CL ≤ 40 pF, (1 card) (1 card)
tODLY tOH
Total System capacitance for each line CL 1) In order to satisfy severe timing, host shall drive only one card.
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Reliability and Durability
Temperature Operation: -25°C / 85°C (Target spec) Storage: -40°C (168h) / 85°C (500h) Junction temperature: max. 95°C
4GB High Capacity miniSD Card
Moisture and corrosion
Operation: 25°C / 95% rel. humidity Storage: 40°C / 93% rel. hum./500h Salt Water Spray: 3% NaCl/35C; 24h acc. MIL STD Method 1009 10.000 mating cycles; test procedure: tbd. 10N 0.15N.m or +/-2.5 deg 1.5m free fall UV: 254nm, 15Ws/cm² according to ISO 7816-1 0.1 Gy of medium-energy radiation (70 keV to 140 keV, cumulative dose per year) to both sides of the card, according to ISO7816-1. No warp page; no mold skin; complete form; no cavities surface smoothness