TS512MUSD80

TS256~512MUSD80 Description Transcend microSD Card is non-volatile, which means no external power is required to retain the information stored on it. Besides, it is also a solid-state device that without moving parts to skip or break down. Based on original SLC(Single Level Cell) NAND flash chip, Transcend microSD card can offer an incredible combination of fast data transfer, great flexibility, excellent security and incredibly small size. 80x microSD Memory Card Features • ROHS compliant product • Operating Voltage: 2.7 ~ 3.6V • Operating Temperature: -25 ~ 85°C • Durability: 10,000 insertion/removal cycles • Fully compatible with SD card spec. v1.1 • Comply with SD Association File System Specification • Mechanical Write Protection Switch with microSD adapter • SD Host allows MultiMediaCard upward compatibility • Form Factor: 11mm x 15mm x 1mm Placement 12345678 Front Pin Definition Back SD Mode Pin No. Name 1 2 3 4 5 6 7 DAT2 CD/DAT3 CMD VDD CLK VSS DAT0 DAT1 Type I/O/PP I/O/PP PP S I S I/O/PP I/O/PP Description Data Line [Bit2] Card Detect / Data Line [Bit3] Command / Response Supply voltage Clock Supply voltage ground Data Line [Bit0] Data Line [Bit1] Name RSV CS DI VDD SPI Mode Type Reserved I I S I S O/PP Chip Select Data In Supply voltage Description SCLK VSS Clock Supply voltage ground DO RSV Data out Reserved 8 S: Power Supply; I:Input; O:Output; PP:Push-Pull Transcend Information Inc. 1 TS256~512MUSD80 Architecture 80x microSD Memory Card Transcend Information Inc. 2 TS256~512MUSD80 Bus Operating Conditions • General Parameter Peak voltage on all lines All Inputs Input Leakage Current All Outputs Output Leakage Current -10 10 µA -10 10 µA 80x microSD Memory Card Symbol Min. -0.3 Max. VDD+0.3 Unit V Remark • Power Supply Voltage Parameter Supply voltage Supply voltage specified in OCR register Supply voltage differentials (VSS1, VSS2) Power up time -0.3 0.3 250 V ms From 0v to VDD Min. Symbol VDD Min. 2.0 Max. 3.6 Unit V Remark CMD0, 15,55,ACMD41 commands Except CMD0, 15,55, ACMD41 commands Note. The current consumption of any card during the power-up procedure must not exceed 10 mA. • Bus Signal Line Load The total capacitance CL the CLK line of the SD Memory Card bus is the sum of the bus master capacitance CHOST, the bus capacitance CBUS itself and the capacitance CCARD of each card connected to this line: CL = CHOST + CBUS + Ν*CCARD Where N is the number of connected cards. Requiring the sum of the host and bus capacitances not to exceed 30 pF for up to 10 cards, and 40 pF for up to 30 cards, the following values must not be exceeded: Parameter Bus signal line capacitance Single card capacitance Maximum signal line inductance Pull-up resistance inside card (pin1) Symbol CL CCARD RDAT3 Min. Max. 100 10 16 Unit pF pF nH KΩ Remark fPP ≤ 20 MHz, 7 cards fPP ≤ 20 MHz May be used for card detection 10 90 Note that the total capacitance of CMD and DAT lines will be consist of CHOST, CBUS and one CCARD only since they are connected separately to the SD Memory Card host. Parameter Pull-up resistance Bus signal line capacitance Symbol RCMD, RDAT CL Min. 10 Max. 100 250 Unit KΩ pF Remark To prevent bus floating fPP ≤ 5 MHz, 21 cards Transcend Information Inc. 3 TS256~512MUSD80 • Bus Signal Levels 80x microSD Memory Card As the bus can be supplied with a variable supply voltage, all signal levels are related to the supply voltage. To meet the requirements of the JEDEC specification JESD8-1A, the card input and output voltages shall be within the following specified ranges for any VDD of the allowed voltage range: Parameter Output HIGH voltage Output LOW voltage Input HIGH voltage Input LOW voltage Symbol VOH VOL VIH VIL Min. 0.75* VDD Max. 0.125* VDD Unit V V V V Remark IOH = -100 μA @VDD min IOL = 100 μA @VDD min 0.625* VDD VSS – 0.3 VDD + 0.3 0.25* VDD Transcend Information Inc. 4 TS256~512MUSD80 • Bus Timing 80x microSD Memory Card Parameter Clock frequency Data Transfer Mode Clock frequency Identification Mode (The low freq. is required for MultiMediaCard compatibility.) Clock low time Clock high time Clock rise time Clock fall time Inputs CMD, DAT (referenced to CLK) Input set-up time Input hold time Outputs CMD, DAT (referenced to CLK) Output Delay time Symbol fPP fOD Min 0 0 Max. 25 400 Unit MHz KHz Remark CL ≤ 100 pF, (7 cards) CL ≤ 250 pF, (21 cards) Clock CLK (All values are referred to min (VIH) and max (VIL) tWL tWH tTLH tTHL 10 50 10 50 10 50 10 50 ns ns ns ns ns ns ns ns ns ns 14 ns CL ≤ 100 pF, (7 cards) CL ≤ 250 pF, (21 cards) CL ≤ 100 pF, (7 cards) CL ≤ 250 pF, (21 cards) CL ≤ 100 pF, (7 cards) CL ≤ 250 pF, (21 cards) CL ≤ 100 pF, (7 cards) CL ≤ 250 pF, (21 cards) CL ≤ 25 pF, (1 cards) CL ≤ 25 pF, (1 cards) CL ≤ 25 pF, (1 cards) tISU tIH tODLY 5 5 5 0 Transcend Information Inc. TS256~512MUSD80 Reliability and Durability Temperature Operation: -25°C / 85°C (Target spec) Storage: -40°C (168h) / 85°C (500h) Junction temperature: max. 95°C 80x microSD Memory Card Moisture and corrosion Operation: 25°C / 95% rel. humidity Storage: 40°C / 93% rel. hum./500h Salt Water Spray: 3% NaCl/35C; 24h acc. MIL STD Method 1009 10000 mating cycles 10N 0.10N*m , +/- 2.5deg max 1.5m free fall UV: 254nm, 15Ws/cm² according to ISO 7816-1 No warppage; no mold skin; complete form; no cavities surface smoothness