TC2491

TC2491 REV4_20070507 0.5 W Flange Ceramic Packaged PHEMT GaAs Power FETs FEATURES • 0.5 W Typical Output Power at 6 GHz • 15 dB Typical Linear Power Gain at 6 GHz • High Linearity: IP3 = 37 dBm Typical at 6 GHz • High Power Added Efficiency: Nominal PAE of 40 % at 6 GHz • Suitable for High Reliability Application • Breakdown Voltage: BVDGO ≥ 15 V • Lg = 0.35 µm, Wg = 1.2 mm • Tight Vp ranges control • High RF input power handling capability • 100 % DC Tested PHOTO ENLARGEMENT • Flange Ceramic Package DESCRIPTION The TC2491 is packaged with the TC1401 Pseudomorphic High Electron Mobility Transistor (PHEMT) chip. The flange ceramic package provides the best thermal conductivity for the GaAs FET. All devices are 100% DC and RF tested to assure consistent quality. Typical applications include high dynamic range power amplifiers for commercial and military high performance power applications. ELECTRICAL SPECIFICATIONS (TA=25 °C) Symbol P1dB GL IP3 PAE IDSS gm VP Rth CONDITIONS Output Power at 1dB Gain Compression Point , f = 6GHz VDS = 8 V, IDS = 120 mA Linear Power Gain, f = 6GHz VDS = 8 V, IDS = 120 mA Intercept Point of the 3rd-order Intermodulation, f = 6GHz VDS = 8 V, IDS = 120 mA, *PSCL = 14 dBm Power Added Efficiency at 1dB Compression Power, f = 6GHz Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V Transconductance at VDS = 2 V, VGS = 0 V Pinch-off Voltage at VDS = 2 V, ID = 2.4 mA 15 Thermal Resistance MIN TYP MAX UNIT 26.5 27 15 37 40 300 200 -1.7** 18 25 dBm dB dBm % mA mS Volts Volts °C/W BVDGO Drain-Gate Breakdown Voltage at IDGO =0.6 mA Note: * PSCL: Output Power of Single Carrier Level ** For the tight control of the pinch-off voltage range, we divide TC2491 into 3 model numbers to fit customer design requirement (1)TC2491P1519 : Vp = -1.5V to -1.9V (2)TC2491P1620 : Vp = -1.6V to -2.0V (3)TC2491P1721 : Vp = -1.7V to -2.1V If required, customer can specify the requirement in purchasing document. For special Vp requirement, please contact factory for details. TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 P1/3 TC2491 REV4_20070507 ABSOLUTE MAXIMUM RATINGS (TA=25 °C) Symbol VDS VGS IDS Pin PT TCH TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current RF Input Power, CW Continuous Dissipation Channel Temperature Storage Temperature Rating 12 V -5 V IDSS 26 dBm 1.9 W 175 °C - 65 °C to +175 °C RECOMMANDED OPERATING CONDITION Symbol VDS ID Parameter Drain to Source Voltage Drain Current Rating 8V 120 mA HANDLING PRECAUTIONS: The user must operate in a clean, dry environment. Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. The static discharge must be less than 300V. TYPICAL SCATTERING PARAMETERS (TA=25 °C) VDS = 8 V, IDS = 120 mA 1.0 0. 2. 0 Swp Max 9GHz 3. 0 Mag Max 0.1 12 13 5 150 0 0.8 10 5 90 75 60 Swp Max 9 GHz 45 6 4 S12 30 15 10.0 0.2 0.4 0.6 0.8 1.0 2.0 3.0 4.0 5.0 0 .6 .0 -0 .4 -0 .8 -0 -1.0 -2 60 0. 45 2. 0 Mag Max 10 13 5 15 Swp Max 9 GHz 0. 4 1.0 90 0.8 75 6 15 165 0 -180 -15 -165 -1 50 -3 0 35 -0 . 20 -0.8 -1.0 . -2 -1 6 0 . -0 4 -105 -1 2 Per Div Swp Min 2 GHz TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 P2/3 -3 . -4 0 -5..0 0 2 -0. Swp Min 2GHz -10.0 10.0 0.2 0.4 0.6 0.8 1.0 2.0 3.0 4.0 5.0 0 0.2 0 S21 -3 .0 -4 -5 ..0 0 -0 . 2 S11 Swp Min 2GHz -10.0 0. 0 4. 0 5. 10 .0 0.2 165 0 -180 -15 -165 -30 -150 -135 12 0 10 5 90 60 45 0.025 Per Div 75 Swp Min 2 GHz Swp Max 9GHz 3. 0 105 12 0 S22 30 0 4. 0 5. 10.0 -4 5 -6 0 -75 -90 TC2491 REV4_20070507 FREQUENCY (GHz) 2 3 4 5 6 7 8 9 S11 MAG 0.8455 0.8075 0.7944 0.7954 0.8582 0.9370 0.9470 0.9074 ANG -146.07 174.44 135.48 86.86 29.13 -17.10 -50.56 -87.80 MAG 7.0138 5.4789 4.6247 4.2254 3.6581 2.7289 1.8813 1.1999 S21 ANG 72.47 38.75 5.59 -31.28 -73.88 -115.82 -155.07 162.03 MAG 0.0398 0.0426 0.0415 0.0404 0.0345 0.0215 0.0112 0.0076 S12 ANG 0.67 -24.40 -48.07 -76.10 -110.20 -147.61 170.65 44.87 MAG 0.4193 0.3998 0.3699 0.3029 0.1848 0.1316 0.3205 0.5130 S22 ANG -85.61 -104.93 -126.51 -144.68 -151.48 -94.58 -72.70 -84.93 OUTLINE DIMENSIONS (Unit: mm) Gate Source Source Drain TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 P3/3