TC2696

TC2696 REV4_20070507 2 W Flange Ceramic Packaged PHEMT GaAs Power FETs FEATURES • 2 W Typical Output Power at 6 GHz • 10 dB Typical Linear Power Gain at 6 GHz • High Linearity: IP3 = 43 dBm Typical at 6 GHz • High Power Added Efficiency: Nominal PAE of 43 % at 6 GHz • Suitable for High Reliability Application • Breakdown Voltage: BVDGO ≥ 18 V • Lg = 0.6 µm, Wg = 5 mm • Tight Vp ranges control • High RF input power handling capability • 100 % DC Tested PHOTO ENLARGEMENT • Flange Ceramic Package DESCRIPTION The TC2696 is packaged with the TC1606 Pseudomorphic High Electron Mobility Transistor (PHEMT) chip. The flange ceramic package provides the best thermal conductivity for the GaAs FET. All devices are 100% DC and RF tested to assure consistent quality. Typical applications include high dynamic range power amplifiers for commercial and military high performance power applications. ELECTRICAL SPECIFICATIONS (TA=25 °C) Symbol P1dB GL IP3 PAE IDSS gm VP CONDITIONS Output Power at 1dB Gain Compression Point, f = 6 GHz VDS = 8 V, IDS = 500 mA Linear Power Gain, f = 6 GHz VDS = 8 V, IDS = 500 mA Intercept Point of the 3 -order Intermodulation, f = 6 GHz VDS = 8 V, IDS = 500 mA, *PSCL = 20 dBm Power Added Efficiency at 1dB Compression Power, f = 6 GHz Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V Transconductance at VDS = 2 V, VGS = 0 V Pinch-off Voltage at VDS = 2 V, ID = 10 mA 15 rd MIN 32.5 TYP 33 10 43 43 1.25 850 -1.7** 18 7 MAX UNIT dBm dB dBm % A mS Volts Volts °C/W BVDGO Drain-Gate Breakdown Voltage at IDGO =2.5 mA Rth Thermal Resistance Note: * PSCL: Output Power of Single Carrier Level. ** For the tight control of the pinch-off voltage range, we divide TC2696 into 3 model numbers to fit customer design requirement (1)TC2696P1519 : Vp = -1.5V to -1.9V (2)TC2696P1620 : Vp = -1.6V to -2.0V (3)TC2696P1721 : Vp = -1.7V to -2.1V If required, customer can specify the requirement in purchasing document. For special Vp requirement, please contact factory for details. TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 P1/2 TC2696 REV4_20070507 ABSOLUTE MAXIMUM RATINGS (TA=25 °C) Symbol VDS VGS IDS Pin PT TCH TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current RF Input Power, CW Continuous Dissipation Channel Temperature Storage Temperature Rating 12 V -5 V IDSS 30 dBm 7.7 W 175 °C - 65 °C to +175 °C RECOMMANDED OPERATING CONDITION Symbol VDS ID Parameter Drain to Source Voltage Drain Current Rating 8V 500 mA HANDLING PRECAUTIONS: The user must operate in a clean, dry environment. Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. The static discharge must be less than 300V. TYPICAL SCATTERING PARAMETERS (TA=25 °C) VDS = 8 V, IDS = 500 mA FREQUENCY (GHz) 2 3 4 5 6 7 8 9 S11 MAG 0.9232 0.9179 0.9098 0.8978 0.8806 0.8574 0.8295 0.8045 ANG 175.28 161.34 148.40 134.59 118.62 99.05 74.18 42.52 MAG 1.8019 1.2279 0.9600 0.8236 0.7599 0.7426 0.7529 0.7648 S21 ANG 58.43 38.12 19.07 0.11 -19.79 -41.79 -67.22 -97.22 MAG 0.0288 0.0303 0.0327 0.0364 0.0420 0.0496 0.0595 0.0701 S12 ANG -14.46 -26.85 -38.61 -50.96 -64.88 -81.49 -102.04 -127.59 MAG 0.6268 0.6531 0.6737 0.6847 0.6839 0.6699 0.6430 0.6085 S22 ANG 174.83 167.56 158.81 148.28 135.52 119.60 98.92 71.06 OUTLINE DIMENSIONS (Unit: mm) Source Source Drain TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 P2/2