TC2876

TC2876 REV4_20070507 5 W Low-Cost Packaged PHEMT GaAs Power FETs FEATURES • 5 W Typical Output Power at 6 GHz • 7 dB Typical Linear Power Gain at 6 GHz • High Linearity: IP3 = 47 dBm Typical at 6 GHz • High Power Added Efficiency: Nominal PAE of 40 % at 6 GHz • Suitable for High Reliability Application • Breakdown Voltage: BVDGO ≥ 18 V • Lg = 0.6 µm, Wg = 12 mm • Tight Vp ranges control • High RF input power handling capability • 100 % DC Tested PHOTO ENLARGEMENT • Low Cost Ceramic Package DESCRIPTION The TC2876 is packaged with the TC1806 Pseudomorphic High Electron Mobility Transistor (PHEMT) GaAs Power chip. The Cu-based ceramic package provides excellent thermal conductivity for the GaAs FET. All devices are 100% DC tested to assure consistent quality. Typical applications include high dynamic range power amplifiers for commercial and military high performance power applications. ELECTRICAL SPECIFICATIONS (TA=25 °C) Symbol P1dB GL IP3 PAE IDSS gm VP CONDITIONS Output Power at 1dB Gain Compression Point , f = 6 GHz VDS = 8 V, IDS = 1200 mA Linear Power Gain, f = 6 GHz VDS = 8 V, IDS = 1200 mA Intercept Point of the 3 -order Intermodulation, f = 6 GHz VDS = 8 V, IDS = 1200 mA, *PSCL = 23 dBm Power Added Efficiency at 1dB Compression Power, f = 6 GHz Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V Transconductance at VDS = 2 V, VGS = 0 V Pinch-off Voltage at VDS = 2 V, ID = 24 mA 18 rd MIN 36 TYP 36.5 7 47 40 3 2000 -1.7** 22 3.5 MAX UNIT dBm dB dBm % A mS Volts Volts °C/W BVDGO Drain-Gate Breakdown Voltage at IDGO =6 mA Rth Thermal Resistance Note: * PSCL: Output Power of Single Carrier Level. ** For the tight control of the pinch-off voltage range, we divide TC2876 into 3 model numbers to fit customer design requirement (1)TC2876P1519 : Vp = -1.5V to -1.9V (2)TC2876P1620 : Vp = -1.6V to -2.0V (3)TC2876P1721 : Vp = -1.7V to -2.1V If required, customer can specify the requirement in purchasing document. For special Vp requirement, please contact factory for details. TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 P 1/2 TC2876 REV4_20070507 ABSOLUTE MAXIMUM RATINGS (TA=25 °C) Symbol VDS VGS IDS Pin PT TCH TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current RF Input Power, CW Continuous Dissipation Channel Temperature Storage Temperature Rating 12 V -5 V IDSS 33 dBm 12 W 175 °C - 65 °C to +175 °C RECOMMANDED OPERATING CONDITION Symbol VDS ID Parameter Drain to Source Voltage Drain Current Rating 8V 1200 mA HANDLING PRECAUTIONS: The user must operate in a clean, dry environment. Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. The static discharge must be less than 300V. OUTLINE DIMENSIONS (Unit: inch) 2 PLCS 2 PLCS 4 PLCS 4 PLCS 4 PLCS 4 SIDES TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 P 2/2