TC2896

TC2896 REV4_20070507 5 W Flange Ceramic Packaged GaAs Power FETs FEATURES • 5 W Typical Power at 6 GHz • 8 dB Typical Linear Power Gain at 6 GHz • High Linearity: IP3 = 47 dBm Typical at 6 Ghz • High Power Added Efficiency: Nominal PAE of 40 % at 6 GHz • Suitable for High Reliability Application • Lg = 0.6 µm, Wg = 12 mm • Tight Vp ranges control • High RF input power handling capability • 100 % DC and RF Tested PHOTO ENLARGEMENT • Flange Ceramic Package DESCRIPTION The TC2896 is packaged with the TC1806 Pseudomorphic High Electron Mobility Transistor (PHEMT) chip. The flange ceramic package provides the best thermal conductivity for the GaAs FET. All devices are 100% DC and RF tested to assure consistent quality. Typical applications include high dynamic range power amplifiers for commercial and military high performance power applications. ELECTRICAL SPECIFICATIONS Symbol P1dB GL IP3 PAE IDSS gm VP Rth CONDITIONS Output Power at 1dB Gain Compression Point, f = 6 GHz VDS = 8 V, IDS = 1200 mA Linear Power Gain, f = 6 GHz VDS = 8 V, IDS = 1200 mA Intercept Point of the 3rd-order Intermodulation, f = 6 GHz VDS = 8 V, IDS = 1200 mA, *PSCL = 23 dBm Power Added Efficiency at 1dB Compression Power, f = 6 GHz Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V Transconductance at VDS = 2 V, VGS = 0 V Pinch-off Voltage at VDS = 2 V, ID = 24 mA 18 MIN 36 TYP 36.5 8 47 40 3 2000 -1.7** 22 2.7 MAX UNIT dBm dB dBm % A mS Volts Volts °C/W BVDGO Drain-Gate Breakdown Voltage at IDGO =6 mA Thermal Resistance * PSCL: Output Power of Single Carrier Level. ** For the tight control of the pinch-off voltage range, we divide TC2896 into 3 model numbers to fit customer design requirement (1)TC2896P1519 : Vp = -1.5V to -1.9V (2)TC2896P1620 : Vp = -1.6V to -2.0V (3)TC2896P1721 : Vp = -1.7V to -2.1V If required, customer can specify the requirement in purchasing document. For special Vp requirement, please contact factory for details. TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 P1/4 TC2896 REV4_20070507 ABSOLUTE MAXIMUM RATINGS at 25 °C Symbol VDS VGS IDS Pin PT TCH TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current RF Input Power, CW Continuous Dissipation Channel Temperature Storage Temperature Rating 12 V -5 V IDSS 33 dBm 12 W 175 °C - 65 °C to +175 °C RECOMMANDED OPERATING CONDITION Symbol VDS ID Parameter Drain to Source Voltage Drain Current Rating 8V 1200 mA HANDLING PRECAUTIONS: The user must operate in a clean, dry environment. Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. The static discharge must be less than 300V. FLANGE PACKAGE OUTLINE (Unit: mm) Gate Source Source Drain TYPICAL COMMON SOURCE SCATTERING PARAMETERS (VD = 8 V, ID = 1200 mA) FREQUENCY (GHz) 2 3 4 5 6 7 8 9 S11 MAG 0.9650 0.9638 0.9619 0.9589 0.9546 0.9486 0.9404 0.9295 ANG 171.78 163.17 154.95 146.44 137.21 126.89 114.98 100.88 MAG 0.9104 0.6050 0.4575 0.3761 0.3298 0.3056 0.2972 0.3011 S21 ANG 59.16 42.70 27.39 12.78 -1.60 -16.23 -31.69 -48.62 MAG 0.0139 0.0142 0.0149 0.0159 0.0173 0.0195 0.0224 0.0263 S12 ANG -12.97 -21.11 -28.69 -36.22 -44.15 -52.92 -63.02 -75.03 MAG 0.8234 0.8368 0.8493 0.8590 0.8648 0.8664 0.8636 0.8562 S22 ANG 170.89 165.05 158.49 151.12 142.84 133.42 122.53 109.67 TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Shanhua Jen, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 P2/4 TC2896 REV4_20070507 TEST CIRCUITS 2.4 GHz 5 W Amplifier Evaluation Board Schematic (VD = 8 V, ID = 1200 mA) EVALUATION BOARD PCB Material: FR4 ER = 4.6 Thickness = 31 mil Unit: mil * DXF file of the PCB can be downloaded from our web site at www.transcominc.com.tw Evaluation Board Parts List Part Type Resistor Capacitor Capacitor Capacitor Capacitor Capacitor Capacitor Capacitor Capacitor Reference Designator R1 C1, C2 C6 C7 C8, C10 C9 C4 C3 C5 Description 12 ohm 0603 0.75 pF 0603 1.5 pF 0603 0.5 pF 0603 50 pF 0603 10 uF 1812 100 pF 0603 1000 pF 0603 0.1 uF 0603 TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 P3/4 TC2896 REV4_20070507 SMALL SIGNAL MODEL (VD = 8 V, ID = 1200 mA) Cgd Rd G Lpkg3 Lpkg2 Lpkg1 Lg Rg FET Cpkg2 Cpkg1 Ri Cgs Rs Ls Lpkg4 S Cds Rds Crf Cpkg1 Cpkg2 Ld Lpkg1 Lpkg2 Lpkg3 D FET Elements Lg = 0.0034 nH Cgd = 0.763 pF Rg = 0.172 Ohm Cgs = 28.656 pF Ri = 0.336 Ohm Gm = 2000 mS T = 7.0 psec Rs = 0.265 Ohm Ls = 0.00048 nH Rds = 6.49 Ohm Rd = 0.193 Ohm Ld = 0.0032 nH Lpkg1 = 0.1725 nH Lpkg2 = 0.208 nH Lpkg3 = 0.079 nH Lpkg4 = 0.00062 nH Cpkg1 = 0.408 pF Cpkg2 = 0.263 pF Cds = 5.01 pF TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 P4/4