TC3977

TC3977 PRE2_20050418 Preliminary 3 W Packaged Single-Bias PHEMT GaAs Power FETs FEATURES • 3W Typical Output Power • 12dB Typical Linear Power Gain at 2.45GHz • High Linearity: IP3 = 45 dBm Typical • High Power Added Efficiency: Nominal PAE of 35% • Breakdown Voltage: BVDGO ≥ 18V • Wg = 7.5 mm • 100 % DC Tested PHOTO ENLARGEMENT • Suitable for High Reliability Application DESCRIPTION The TC3977 is a single-bias Cu-based ceramic packaged device with TC1706N PHEMT GaAs FETs, which is designed to provide the single power supply. The Cu-based ceramic package provides excellent thermal conductivity for the GaAs FET. The device is suitable for oscillator and power amplifiers in a wide range of commercial application. All devices are 100% DC tested to assure consistent quality. ELECTRICAL SPECIFICATIONS (@ 2.45 GHz) Symbol P1dB GL IP3 PAE IDS BVDGO Rth Linear Power Gain VDS = 10 V Intercept Point of the 3 -order Intermodulation VDS = 10 V, *PSCL = 24 dBm Power Added Efficiency at 1dB Compression Power Drain-Source Current at VDS = 10 V Drain-Gate Breakdown Voltage at IDGO = 3.75mA Thermal Resistance 18 rd CONDITIONS Output Power at 1dB Gain Compression Point VDS = 10 V MIN TYP MAX UNIT 34.5 35.5 12 45 35 900 22 5.3 dBm dB dBm % mA Volts °C/W Note: *PSCL: Output Power of Single Carrier Level. TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 P1/1