TM10N06SI

TM10N06SI N-Channel Enhancement Mosfet General Description General Features • Low RDS(ON) • RoHS and Halogen-Free Compliant RDS(ON) = 40mΩ (Typ .) @ VGS=10V VDS=60V ID =10A Applications 100% UIS Tested 100% Rg Tested • Load switch • PWM SI:SOT-89-3L D D G G D S Marking: 10N06 Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Max. Units VDSS Drain-Source Voltage 60 V VGSS Gate-Source Voltage ±20 V TC = 25℃ 10 A TC = 100℃ 6.8 A 30 A 6.3 mJ 4 W 63 ℃/W -55 to +175 ℃ ID Continuous Drain Current IDM Pulsed Drain Current note1 EAS PD RθJC TJ, TSTG Single Pulsed Avalanche Power Dissipation Energy note2 TC = 25℃ Thermal Resistance, Junction to Case Operating and Storage Temperature Range 1/5 TM10N06SI N-Channel Enhancement Mosfet Electrical Characteristics (TJ=25℃ unless otherwise specified) Symbol Parameter Test Condition Min. Typ. Max. Units Off Characteristic V(BR)DSS Drain-Source Breakdown Voltage VGS=0V, ID=250μA 60 - - V IDSS Zero Gate Voltage Drain Current VDS=60V, VGS=0V, - - 1.0 μA IGSS Gate to Body Leakage Current VDS=0V, VGS=±20V - - ±100 nA Gate Threshold Voltage VDS=VGS, ID=250μA 1 1.6 2.5 V Static Drain-Source on-Resistance VGS=10V, ID=15A - 40 49 note3 VGS=4.5V, ID=10A - 45 63 - 825 - pF - 49 - pF - 41 - pF - 14 - nC - 2.9 - nC - 5.2 - nC - 5 - ns - 2.6 - ns - 16.1 - ns - 2.3 - ns On Characteristics VGS(th) RDS(on) mΩ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain(“Miller”) Charge VDS=25V, VGS=0V, f=1.0MHz VDS=30V, ID=4.5A, VGS=10V Switching Characteristics td(on) Turn-on Delay Time tr Turn-on Rise Time td(off) Turn-off Delay Time tf Turn-off Fall Time VDS=30V,ID=2A, RL=6.7Ω,RG=3Ω, VGS=10V Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain to Source Diode Forward Current - - 10 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 30 A VSD Drain to Source Diode Forward Voltage - - 1.2 V - 35 - ns - 53 - nC trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge VGS=0V, IS=15A TJ=25℃,IF=15A, dI/dt=100A/μs Notes:1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature 2. EAS condition : TJ=25℃,VDD=30V,VG=10V,L=0.5mH,Rg=25Ω,IAS=6.1A 3. Pulse Test: Pulse Width≤300μs, Duty Cycle≤0.5% 2/5 TM10N06SI N-Channel Enhancement Mosfet Typical Performance Characteristics Figure 2: Typical Transfer Characteristics Figure1: Output Characteristics ID (A) 40 10V ID (A) 40 4.5V 4V 30 30 20 20 TJ=125℃ 25℃ VGS=3V 10 10 VDS(V) 0 0 2.0 4.0 6.0 8.0 10 VGS(V) 0 1.0 2.0 3.0 4.0 5.0 Figure 4: Body Diode Characteristics Figure 3:On-resistance vs. Drain Current IS(A) 1.0E+01 RDS(ON) (mΩ) 80 0 1.0E+00 60 VGS=4.5V 1.0E-01 40 125℃ TJ=25℃ 1.0E-02 VGS=10V 1.0E-03 20 1.0E-04 ID(A) 0 0 10 20 30 40 1.0E-05 0.0 Figure 5: Gate Charge Characteristics 10 8 0.2 0.4 VSD(V) 0.6 0.8 1.0 Figure 6: Capacitance Characteristics VGS(V) VDS=30V ID=4.5A 103 Ciss 6 4 102 Crss 2 0 Qg(nC) 0 Coss 3 6 9 12 15 101 0 VDS(V) 10 20 30 40 3/5 50 TM10N06SI N-Channel Enhancement Mosfet Figure 7: Normalized Breakdown Voltage vs. Junction Temperature 1.3 Figure 8: Normalized on Resistance vs. Junction Temperature RDS(on) 2.5 VBR(DSS) 1.2 2.0 1.1 1.5 1.0 1.0 0.9 Tj (℃) 0 -100 -50 0 50 100 150 200 Figure 9: Maximum Safe Operating Area 12 100 10μs 0 50 100 150 ID(A) 10 8 1ms 10ms Limited by RDS(on) 6 100ms DC 4 TC=25℃ Single pulse 0.01 0.1 2 VDS (V) 10 1 0 100 0 25 50 Tc (℃) 75 100 125 150 Figure.11: Maximum Effective Transient Thermal Impedance, Junction-to-Case 101 ZthJ-C(℃/W) 100 D=0.5 t1 D=0.2 D=0.1 t2 D=0.05 D=0.02 D=0.01 Notes: Single pulse 1.Duty factor D=t1/t2 2.Peak TJ=PDM*ZthJC+TC TP(s) PDM 10-1 10-2 10-3 -6 10 200 100μs 10 0.1 Tj (℃) -50 Figure 10: Maximum Continuous Drain Current vs. Case Temperature ID(A) 1 0.5 -100 10-5 10-4 10-3 10-2 10-1 100 101 4/5 175 Package Mechanical Data:SOT-89-3L 5/5