TM15N06SI

TM15N06SI N-Channel Enhancement Mosfet General Description General Features • Low RDS(ON) • RoHS and Halogen-Free Compliant VDS=60V ID =15A RDS(ON) = 30mΩ (Typ .) @ VGS=10V Applications 100% UIS Tested 100% Rg Tested • Load switch • PWM SI:SOT-89-3L D D D G G S Marking: 15N06 Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Rating Units VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage ±20 V ID@TA=25℃ Continuous Drain Current, VGS @ 10V1 15 A ID@TA=70℃ Continuous Drain Current, VGS @ 10V1 7.5 A 22 A 22 mJ 23 A 1.5 W IDM EAS IAS PD@TA=25℃ Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation4 TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter RθJA Thermal Resistance Junction-ambient RθJC Junction-Case1 Thermal Resistance Typ. 1 Max. Unit --- 85 ℃/W --- 25 ℃/W 1/5 TM15N06SI N-Channel Enhancement Mosfet Electrical Characteristics (TJ=25℃ unless otherwise specified) Symbol Parameter Test Condition Min. Typ. Max. Units Off Characteristic V(BR)DSS Drain-Source Breakdown Voltage VGS=0V, ID=250μA 60 - - V IDSS Zero Gate Voltage Drain Current VDS=60V, VGS = 0V, - - 1.0 μA IGSS Gate to Body Leakage Current VDS=0V, VGS = ±20V - - ±100 nA Gate Threshold Voltage VDS=VGS, ID=250μA 1.0 1.6 2.5 V Static Drain-Source on-Resistance VGS=10V, ID=5A - 30 40 note3 VGS=4.5V, ID=3A - 36 50 - 1148 - pF - 58.5 - pF - 49.4 - pF - 20.3 - nC - 3.7 - nC - 5.3 - nC - 7.6 - ns - 20 - ns - 15 - ns - 24 - ns On Characteristics VGS(th) RDS(on) mΩ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain(“Miller”) Charge VDS=25V, VGS=0V, f=1.0MHz VDS=30V, ID=2.5A, VGS=10V Switching Characteristics td(on) Turn-on Delay Time tr Turn-on Rise Time td(off) Turn-off Delay Time tf VDS=30V, ID=5A, RG=1.8Ω, VGS=10V Turn-off Fall Time Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain to Source Diode Forward Current - - 15 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 20 A VSD Drain to Source Diode Forward Voltage - - 1.2 V - 29 - ns - 43 - nC trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge VGS=0V, IS=5A IF=5A, dI/dt=100A/μs Notes:1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature 2. EAS condition : TJ=25℃,VDD=30V,VG=10V,L=0.5mH,Rg=25Ω,IAS=8.7A 3. Pulse Test: Pulse Width≤300μs, Duty Cycle≤0.5% 2/5 TM15N06SI N-Channel Enhancement Mosfet Typical Performance Characteristics Figure 2: Typical Transfer Characteristics Figure1: Output Characteristics ID (A) 12 10V ID (A) 12 4.5V 10 4V 9 8 TJ=125℃ 6 6 V GS=2V 25℃ 4 3 2 V DS(V) 0 0 0.5 1 1.5 2 2.5 0 V GS(V) 0 R DS(ON) (mΩ) 1.0E+01 40 35 1.0E-01 30 1.0E-02 V GS=10V IS(A) 125℃ 1 2 3 4 5 6 1.0E-05 0.0 Figure 5: Gate Charge Characteristics 104 V DS=30V ID=2.5A 0.2 0.4 VSD(V) 0.6 0.8 1.0 C(pF) C iss 103 4 102 C oss C rss 2 Q g(nC) 0 TJ=25℃ Figure 6: Capacitance Characteristics VGS(V) 6 0 4.0 1.0E-04 ID(A) 15 0 8 3.2 1.0E-03 20 10 2.4 1.0E+00 V GS=4.5V 25 1.6 Figure 4: Body Diode Characteristics Figure 3:On-resistance vs. Drain Current 45 0.8 5 10 15 20 25 VDS(V) 101 0 10 20 30 40 3/5 50 TM15N06SI N-Channel Enhancement Mosfet Figure 7: Normalized Breakdown Voltage vs. Junction Temperature VBR(DSS) 1.3 Figure 8: Normalized on Resistance vs. Junction Temperature 2.5 1.2 R DS (on) 2.0 1.1 1.5 1.0 1.0 0.9 0.8 -100 -50 Tj (℃) 50 0 100 150 200 Figure 9: Maximum Safe Operating Area 6 2 10 100μs 10-1 100 150 200 ID(A ) 3 10ms Limited by R DS(on) 50 4 1ms 100 0 5 10μs 1 Tj (℃) -50 Figure 10: Maximum Continuous Drain Current vs. Ambient Temperature ID(A ) 10 0.5 -100 100ms 2 DC 10-2 0.1 T A=25℃ Single pulse 1 VDS (V) 1 10 100 0 0 25 50 T A (℃) 75 100 125 Figure.11: Maximum Effective Transient Thermal Impedance, Junction-to-Ambient ZthJ-A(℃ /W) 102 100 D=0.5 D=0.2 D=0.1 D=0.05 D=0.02 D=0.01 Single pulse 10-1 10-2 -6 10 10-5 10-4 10-3 TP(s) 10-2 PDM 101 t1 t2 Notes: 1.Duty factor D=t1/t2 2.Peak T J=P DM*ZthJA+TA 10-1 100 101 4/5 150 Package Mechanical Data:SOT-89-3L 5/5