TMC1420-EVAL-KIT

POWER MOSFETs FOR STEPPER MOTORS INTEGRATED CIRCUITS TMC1420-LA DATASHEET Dual N & P-Channel 40V Power MOSFET with extremely low on-resistance. High energy efficiency and good thermal performance. APPLICATIONS TMC1420 MOSFETs TRINAMIC 2-phase motor drivers: fit best with bipolar stepper TMC262: up to 4A RMS motor current with 4xTMC1420-LA TMC248: up to 3.5A RMS motor current with 4xTMC1420-LA TMC249: up to 3.5A RMS motor current with 4xTMC1420-LA DESCRIPTION PRODUCT SUMMARY BVDSS RDS(ON) ID FEATURES N-CH P-CH 40V 26.5mΩ 8.8A -40V 42mΩ -7.3A AND The TMC 1420-LA is highly energy efficient. Employing silicon process technology, the TMC1420 achieves an extremely low on-state resistance and fastest switching performance. The TMC1420-LA is intended for power conversion and power management applications that require high efficiency and power density. The PQFN 5x6 package uses standard infrared reflow technique with the backside heat sink and has a very good thermal performance. The package is similar to other enhanced SO-8 packages in the market, such as LFPak and PowerSO-8. BENEFITS N & P-Channel MOSFET Half Bridge Device Simple Drive Requirement Good Thermal Performance IR-reflow and backside heat sink Fast Switching Performance for quick motor reaction PQFN package, 5x6 mm RoHS Compliant and Halogen-Free TMC262 WITH 4X TMC1420-LA MOSFETS TMC262 P D N TMC1420 +VM S G D D N S P TMC1420 Motor coil B Description N and P-channel enhancement mode power MOSFET TRINAMIC Motion Control GmbH & Co. KG Hamburg, Germany S P G Motor coil A Order code TMC1420-LA G D RSENSE G S HB1 RSENSE D HB2 TMC1420 S N +VM D BMB1 G S N G BMB2 D P S 10R G D LB2 TMC1420 LB1 SRB SRA LA1 LA2 BMA2 BMA1 HA2 HA1 10R G S Size 5 x 6 mm2 TMC1420-LA DATASHEET (Rev. 1.01 / 2014-MAY-12) 2 Table of Contents 1 PIN ASSIGNMENTS ................................................................................................... 3 2 ABSOLUTE MAXIMUM RATINGS ................................................................................................... 3 3 THERMAL DATA ................................................................................................... 3 4 ELECTRICAL CHARACTERISTICS ................................................................................................... 4 4.1 N-CH @TJ=25°C (UNLESS OTHERWISE SPECIFIED) ................................................................................................... 4 4.1.1 Source-Drain Diode ....................................................................................................................................... 4 4.2 P-CH @TJ=25°C (UNLESS OTHERWISE SPECIFIED) ................................................................................................... 4 4.2.1 Source-Drain Diode ....................................................................................................................................... 5 5 N-CHANNEL DIAGRAMS ................................................................................................... 6 6 P-CHANNEL DIAGRAMS ................................................................................................... 8 7 PACKAGE MECHANICAL DATA ................................................................................................. 10 7.1 7.2 7.3 DIMENSIONAL DRAWINGS PACKAGE MARKING INFORMATION PACKAGE CODE ................................................................................................. 10 ................................................................................................. 10 ................................................................................................. 10 8 DISCLAIMER ................................................................................................. 11 9 ESD SENSITIVE DEVICE ................................................................................................. 11 10 TABLE OF FIGURES ................................................................................................. 12 11 REVISION HISTORY ................................................................................................. 12 www.trinamic.com TMC1420-LA DATASHEET (Rev. 1.01 / 2014-MAY-12) 3 1 Pin Assignments D2 D2 D1 D1 D1 D1 D2 D2 S1 G1 PQFN5x6 S2 G2 Front view / internal circuit 5 6 7 8 4 G2 3 S2 2 G1 1 S1 Backside view Figure 1.1 TMC1420-LA pin assignments 2 Absolute Maximum Ratings The maximum ratings may not be exceeded under any circumstances. Operating the circuit at or near more than one maximum rating at a time for extended periods shall be avoided by application design. Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current*2 Continuous Drain Current*2 Pulsed Drain Current*1 Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Symbol VDS VGS ID@TA = 25°C ID@TA = 70°C IDM PD@TA = 25°C TSTG TJ N-channel P-channel 40 -40 ±20 ±20 8.8 -7.3 7 -5.8 30 -30 3.57 -55 to 150 -55 to 150 Unit V V A A A W °C °C *1 Pulse width is limited by maximum junction temperature. *2 Surface mounted on 1 in² copper pad of FR4 board, t ≤ 10sec; 85˚C/W at steady state. 3 Thermal Data Parameter Max. Thermal Resistance, Junction-case Max. Thermal Resistance, Junction-ambient* Symbol Rthj-c Rthj-a N-channel 6 35 P-channel 6 35 * Surface mounted on 1 in2 copper pad of FR4 board, t ≤ 10sec; 85˚C/W at steady state. www.trinamic.com Unit °C/W °C/W TMC1420-LA DATASHEET (Rev. 1.01 / 2014-MAY-12) 4 4 Electrical Characteristics 4.1 N-CH @Tj=25°C (unless otherwise specified) Parameter Drain-Source Breakdown Voltage Symbol BVDSS Static Drain-Source On-Resistance* RDS(ON) Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance * Pulse test VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Test Conditions VGS=0V, ID=250µA VGS=10V, ID=7A VGS=4.5V, ID=5A VDS= VGS, ID=250µA VDS= 10V, ID=7A VDS= 32V, VGS=0V VDS= 0V, VGS=±20V ID=7A VDS=20V VGS=4.5V VDS=20V ID=1A RG=3.3Ω VGS=5V VGS=0V VDS=15V f=1.0MHz f=1.0MHz Min 40 Test Conditions VGS=0V, IS=2.9A VGS=0V, IS=7A dl/dt=100A/µs Min 1 Typ Max 21.2 32.7 1.7 14 26.5 45 3 7 2.2 3.7 6 18 17 19 660 120 75 2.2 10 ±30 11.2 1050 4.4 Unit V mΩ mΩ V S mA mA nC nC nC ns ns ns ns pF pF pF Ω 4.1.1 Source-Drain Diode Parameter Forward On Voltage* Reverse Recovery Time Reverse Recovery Charge * Pulse test Symbol VSD trr Qrr Typ Max 1.2 Unit V ns nC Typ Max 33.3 53.3 -1.7 11 42 70 -3 Unit V mΩ mΩ V S mA mA nC nC nC ns ns ns ns pF pF pF Ω 24 21 4.2 P-CH @Tj=25°C (unless otherwise specified) Parameter Drain-Source Breakdown Voltage Symbol BVDSS Static Drain-Source On-Resistance* RDS(ON) Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance * Pulse test www.trinamic.com VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Test Conditions VGS=0V, ID=-250µA VGS=-10V, ID=-5A VGS=-4.5V, ID=-3A VDS= VGS, ID=-250µA VDS= -10V, ID=-5A VDS= -32V, VGS=0V VDS= 0V, VGS=±20V ID=-5A VDS=-20V VGS=-4.5V VDS=-20V ID=-1A RG=3.3Ω VGS=-5V VGS=0V VDS=-15V f=1.0MHz f=1.0MHz Min -40 -1 11.5 2.3 7 7 20 34 29 720 205 165 6 -10 ±30 18.4 1150 12 TMC1420-LA DATASHEET (Rev. 1.01 / 2014-MAY-12) 5 4.2.1 Source-Drain Diode Parameter Forward On Voltage* Reverse Recovery Time Reverse Recovery Charge * Pulse test www.trinamic.com Symbol VSD trr Qrr Test Conditions VGS=0V, IS=-2.9A VGS=0V, IS=-5A dl/dt=100A/µs Min Typ 32 34 Max -1.2 Unit V ns nC TMC1420-LA DATASHEET (Rev. 1.01 / 2014-MAY-12) 6 5 N-Channel Diagrams Figure 5.1 Typical output characteristics Figure 5.3 On-resistance v.s. gate voltage Figure 5.5 Forward characteristic of reverse diode www.trinamic.com Figure 5.2 Typical output characteristics Figure 5.4 Normalized on-resistance v.s. junction temperature Figure 5.6 Gate threshold voltage v.s. junction temperature TMC1420-LA DATASHEET (Rev. 1.01 / 2014-MAY-12) 7 N-Channel Diagrams Figure 5.7 Gate charge characteristics Figure 5.8 Typical capacitance characteristics Figure 5.9 Maximum safe operating area Figure 5.10 impedance Figure 5.11 Transfer characteristics Figure 5.12 Maximum continuous drain current v.s. ambient temperature www.trinamic.com Effective transient thermal TMC1420-LA DATASHEET (Rev. 1.01 / 2014-MAY-12) 8 6 P-Channel Diagrams Figure 6.1 Typical output characteristics Figure 6.2 Typical output characteristics Figure 6.3 On-resistance v.s. gate voltage Figure 6.4 Normalized on-resistance v.s. junction temperature Figure 6.5 Forward characteristic of reverse diode Figure 6.6 Gate Threshold voltage v.s. junction temperature www.trinamic.com TMC1420-LA DATASHEET (Rev. 1.01 / 2014-MAY-12) 9 P-Channel Diagrams Figure 6.7 Gate charge characteristics Figure 6.8 Typical capacitance characteristics Figure 6.9 Maximum safe operating area Figure 6.10 Effective transient thermal impedance Figure 6.11 Transfer characteristics Figure 6.12 Maximum continuous drain current v.s. ambient temperature www.trinamic.com TMC1420-LA DATASHEET (Rev. 1.01 / 2014-MAY-12) 7 10 Package Mechanical Data 7.1 PQFN 5x6 Dimensional Drawings Note: All dimensions are in millimeters. Drawings are not to scale. The dimensions do not include mold protrusions. Symbols Min Nom A 0.90 1.00 b 0.33 0.41 C 0.20 D1 4.80 4.90 D2 E 5.90 6.00 E1 (reference) 5.70 5.75 E2 (reference) 3.38 3.58 e 1.27 BSC H K (reference) 0.70 L 0.51 0.61 L1 (reference) 0˚ Figure 7.1 Dimensional drawings 7.2 Package Marking Information Part number Meet RoHS requirement for low volatage MOSFET only TMC1420 YWW SSS Package code Date code Y: last digit of year WW: week SSS: sequence Figure 7.2 Package marking information 7.3 Package Code Device TMC1420 www.trinamic.com Package PQFN 5x6 Temperature range -55° to +150°C Code/ Marking TMC1420-LA Max 1.10 0.51 5.10 4.20 6.10 5.80 3.78 0.62 0.71 0.20 12˚ TMC1420-LA DATASHEET (Rev. 1.01 / 2014-MAY-12) 11 8 Disclaimer TRINAMIC Motion Control GmbH & Co. KG does not authorize or warrant any of its products for use in life support systems, without the specific written consent of TRINAMIC Motion Control GmbH & Co. KG. Life support systems are equipment intended to support or sustain life, and whose failure to perform, when properly used in accordance with instructions provided, can be reasonably expected to result in personal injury or death. Information given in this data sheet is believed to be accurate and reliable. However no responsibility is assumed for the consequences of its use nor for any infringement of patents or other rights of third parties which may result from its use. Specifications are subject to change without notice. All trademarks used are property of their respective owners. 9 ESD Sensitive Device The TMC1420-LA is an ESD sensitive CMOS device sensitive to electrostatic discharge. Take special care to use adequate grounding of personnel and machines in manual handling. After soldering the devices to the board, ESD requirements are more relaxed. Failure to do so can result in defect or decreased reliability. www.trinamic.com TMC1420-LA DATASHEET (Rev. 1.01 / 2014-MAY-12) 12 10 Table of Figures Figure Figure Figure Figure Figure Figure Figure Figure Figure Figure Figure Figure Figure Figure Figure Figure Figure Figure Figure Figure Figure Figure Figure Figure Figure Figure Figure 1.1 TMC1420 pin assignments .............................................................................................................................. 3 5.1 Typical output characteristics ........................................................................................................................ 6 5.2 Typical output characteristics ........................................................................................................................ 6 5.3 On-resistance v.s. gate voltage ..................................................................................................................... 6 5.4 Normalized on-resistance v.s. junction temperature ............................................................................. 6 5.5 Forward characteristic of reverse diode .................................................................................................... 6 5.6 Gate threshold voltage v.s. junction temperature .................................................................................. 6 5.7 Gate charge characteristics ............................................................................................................................ 7 5.8 Typical capacitance characteristics ............................................................................................................... 7 5.9 Maximum safe operating area ...................................................................................................................... 7 5.10 Effective transient thermal impedance .................................................................................................... 7 5.11 Transfer characteristics ................................................................................................................................. 7 5.12 Maximum continuous drain current v.s. ambient temperature ........................................................ 7 6.1 Typical output characteristics ........................................................................................................................ 8 6.2 Typical output characteristics ........................................................................................................................ 8 6.3 On-resistance v.s. gate voltage ..................................................................................................................... 8 6.4 Normalized on-resistance v.s. junction temperature ............................................................................. 8 6.5 Forward characteristic of reverse diode .................................................................................................... 8 6.6 Gate Threshold voltage v.s. junction temperature ................................................................................. 8 6.7 Gate charge characteristics ............................................................................................................................ 9 6.8 Typical capacitance characteristics ............................................................................................................... 9 6.9 Maximum safe operating area ...................................................................................................................... 9 6.10 Effective transient thermal impedance .................................................................................................... 9 6.11 Transfer characteristics ................................................................................................................................. 9 6.12 Maximum continuous drain current v.s. ambient temperature ........................................................ 9 7.1 Dimensional drawings .................................................................................................................................. 10 7.2 Package marking information ..................................................................................................................... 10 11 Revision History Version Date Author Description SD – Sonja Dwersteg 1.00 1.01 2013-MAR-18 2014-MAY-12 SD SD Table 11.1 Documentation revisions www.trinamic.com Initial version RMS motor current values in combination with TMC262, TMC248, and TMC249 updated.