TMC1620-EVAL-KIT

POWER MOSFETs FOR STEPPER MOTORS INTEGRATED CIRCUITS TMC1620-TO DATASHEET Dual N & P-Channel 60V Power MOSFET with low on-resistance and fast switching performance High energy efficiency and good thermal performance. APPLICATIONS TMC1620-TO MOSFETs fit best with TRINAMIC bipolar stepper motor drivers: TMC262: two-phase stepper motor driver; up to 3.5A (48V DC) or 4.5A (24V DC) RMS motor current with 4xTMC1620-TO. three-phase stepper motor driver; up to 3.5A (48V DC) or 4.5A (24V DC) RMS motor current with 3xTMC1620-TO. TMC389: PRODUCT SUMMARY BVDSS RDS(ON) ID FEATURES N-CH P-CH 60V 36mΩ 6.6A -60V 75mΩ -4.7A AND DESCRIPTION This advanced TMC1620-TO power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The highly energy efficient TMC1620 is intended for power conversion and power management applications that require high efficiency and power density. The TO-252-4L 6.5x10mm package has a very good thermal performance. BENEFITS N & P-Channel MOSFET Half Bridge Device Simple Drive Requirement Good Thermal Performance Fast Switching Performance for quick motor reaction TO-252-4L Package, 6.5x10mm RoHS Compliant and Halogen-Free TMC262 WITH 4X TMC1620-TO MOSFETS TMC262 TMC1620 P D S N +VM S G D D N S P TMC1620 Motor coil B Description N and P-channel enhancement mode power MOSFET TRINAMIC Motion Control GmbH & Co. KG Hamburg, Germany TMC1620 P G Motor coil A Order code TMC1620-TO G D RSENSE G S HB1 RSENSE D HB2 S N +VM D BMB1 G S N G BMB2 D P S 10R G D LB2 TMC1620 LB1 SRB SRA LA1 LA2 BMA2 BMA1 HA2 HA1 10R G S Size 6.5 x 10 mm2 TMC1620-TO DATASHEET (Rev. 1.01 / 2014-MAY-12) Table of Contents TABLE OF CONTENTS ........................................................................................................................................................... 2 1 PIN ASSIGNMENTS ...................................................................................................................................................... 3 2 ABSOLUTE MAXIMUM RATINGS .............................................................................................................................. 3 3 THERMAL DATA ............................................................................................................................................................ 3 4 ELECTRICAL CHARACTERISTICS .............................................................................................................................. 4 4.1 N-CH @TJ=25°C (UNLESS OTHERWISE SPECIFIED) ................................................................................................... 4 Source-Drain Diode ....................................................................................................................................... 4 4.2 P-CH @TJ=25°C (UNLESS OTHERWISE SPECIFIED) ................................................................................................... 4 4.2.1 Source-Drain Diode ....................................................................................................................................... 5 4.1.1 5 N-CHANNEL DIAGRAMS ............................................................................................................................................. 6 N-CHANNEL DIAGRAMS ...................................................................................................................................................... 7 6 P-CHANNEL DIAGRAMS .............................................................................................................................................. 8 P-CHANNEL DIAGRAMS ....................................................................................................................................................... 9 7 PACKAGE MECHANICAL DATA ............................................................................................................................... 10 7.1 7.2 DIMENSIONAL DRAWINGS ................................................................................................. 10 PACKAGE MARKING INFORMATION AND PACKAGE CODE .......................................................................................... 10 8 DISCLAIMER ................................................................................................................................................................ 11 9 ESD SENSITIVE DEVICE ........................................................................................................................................... 11 10 TABLE OF FIGURES .................................................................................................................................................... 12 11 REVISION HISTORY .................................................................................................................................................. 12 www.trinamic.com 2 TMC1620-TO DATASHEET (Rev. 1.01 / 2014-MAY-12) 3 1 Pin Assignments D1/D2 D1 D2 G1 S1 G1 S2 G2 G2 S1 S2 Figure 1.1 TMC1620-TO pin assignments 2 Absolute Maximum Ratings The maximum ratings may not be exceeded under any circumstances. Operating the circuit at or near more than one maximum rating at a time for extended periods shall be avoided by application design. Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current*2 Continuous Drain Current*2 Pulsed Drain Current*1 Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Symbol VDS VGS ID@TA = 25°C ID@TA = 70°C IDM PD@TA = 25°C TSTG TJ N-channel P-channel 60 -60 ±20 ±20 6.6 -4.7 5.3 -3.8 20 -20 3.13 -55 to 150 -55 to 150 Unit V V A A A W °C °C *1 Pulse width is limited by maximum junction temperature. *2 N-CH, P-CH are same, mounted on 2oz FR4 board t≤10s. 3 Thermal Data Parameter Max. Thermal Resistance, Junction-case Max. Thermal Resistance, Junction-ambient* Symbol Rthj-c Rthj-a Value 6 40 * Surface mounted on 1 in2 copper pad of FR4 board, t ≤ 10sec; 85˚C/W at steady state. www.trinamic.com Unit °C/W °C/W TMC1620-TO DATASHEET (Rev. 1.01 / 2014-MAY-12) 4 4 Electrical Characteristics 4.1 N-CH @Tj=25°C (unless otherwise specified) Parameter Drain-Source Breakdown Voltage Symbol BVDSS Static Drain-Source On-Resistance* RDS(ON) Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge* Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance * Pulse test VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Test Conditions VGS=0V, ID=250µA VGS=10V, ID=6A VGS=4.5V, ID=4A VDS= VGS, ID=250µA VDS= 10V, ID=5A VDS= 48V, VGS=0V VDS= 0V, VGS=±20V ID=5A VDS=48V VGS=4.5V VDS=30V ID=5A RG=3.3Ω VGS=10V VGS=0V VDS=25V f=1.0MHz f=1.0MHz Min 60 Test Conditions VGS=0V, IS=2.4A VGS=0V, IS=5A dl/dt=100A/µs Min Typ Max 36 42 3 1 12.5 12 3 7 7 10.5 23 5 975 75 65 1.6 10 ±100 19.2 1560 3.2 Unit V mΩ mΩ V S mA mA nC nC nC ns ns ns ns pF pF pF Ω 4.1.1 Source-Drain Diode Parameter Forward On Voltage* Reverse Recovery Time* Reverse Recovery Charge * Pulse test Symbol VSD trr Qrr Typ Max 1.3 Unit V ns nC Max Unit V mΩ mΩ V S mA mA nC nC nC ns ns ns ns pF pF pF Ω 23 22 4.2 P-CH @Tj=25°C (unless otherwise specified) Parameter Drain-Source Breakdown Voltage Symbol BVDSS Static Drain-Source On-Resistance* RDS(ON) Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge* Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time* Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance * Pulse test www.trinamic.com VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Test Conditions VGS=0V, ID=-250µA VGS=-10V, ID=-4A VGS=-4.5V, ID=-3A VDS= VGS, ID=-250µA VDS= -10V, ID=-3A VDS= -48V, VGS=0V VDS= 0V, VGS=±20V ID=-3A VDS=-48V VGS=-4.5V VDS=-30V ID=-3A RG=3.3Ω VGS=-10V VGS=0V VDS=-25V f=1.0MHz f=1.0MHz Min -60 Typ 75 90 -3 -1 11 14 2.5 8 9 9.5 42 28 1000 125 95 1.6 -10 ±100 22.4 1600 3.2 TMC1620-TO DATASHEET (Rev. 1.01 / 2014-MAY-12) 5 4.2.1 Source-Drain Diode Parameter Forward On Voltage* Reverse Recovery Time Reverse Recovery Charge * Pulse test www.trinamic.com Symbol VSD trr Qrr Test Conditions VGS=0V, IS=-2.4A VGS=0V, IS=-3A dl/dt=-100A/µs Min Typ 30 45 Max -1.3 Unit V ns nC TMC1620-TO DATASHEET (Rev. 1.01 / 2014-MAY-12) 6 5 N-Channel Diagrams Figure 5.2 Typical output characteristics Figure 5.1 Typical output characteristics Figure 5.3 On-resistance v.s. gate voltage Figure 5.4 Normalized on-resistance v.s. junction temperature Figure 5.5 Forward characteristic of reverse diode Figure 5.6 Gate threshold voltage v.s. junction temperature www.trinamic.com TMC1620-TO DATASHEET (Rev. 1.01 / 2014-MAY-12) 7 N-Channel Diagrams Figure 5.7 Gate charge characteristics Figure 5.8 Typical capacitance characteristics Figure 5.9 Maximum safe operating area Figure 5.10 impedance Figure 5.11 Switching time waveform Figure 5.12 Gate charge waveform www.trinamic.com Effective transient thermal TMC1620-TO DATASHEET (Rev. 1.01 / 2014-MAY-12) 8 6 P-Channel Diagrams Figure 6.1 Typical output characteristics Figure 6.2 Typical output characteristics Figure 6.3 On-resistance v.s. gate voltage Figure 6.4 Normalized on-resistance v.s. junction temperature Figure 6.5 Forward characteristic of reverse diode Figure 6.6 Gate Threshold voltage v.s. junction temperature www.trinamic.com TMC1620-TO DATASHEET (Rev. 1.01 / 2014-MAY-12) 9 P-Channel Diagrams Figure 6.7 Gate charge characteristics Figure 6.8 Typical capacitance characteristics Figure 6.9 Maximum safe operating area Figure 6.10 Effective transient thermal impedance Figure 6.11 Switching time waveform Figure 6.12 Gate charge waveform www.trinamic.com TMC1620-TO DATASHEET (Rev. 1.01 / 2014-MAY-12) 7 10 Package Mechanical Data 7.1 Dimensional Drawings Note: All dimensions are in millimeters. Drawings are not to scale. The dimensions do not include mold protrusions. Figure 7.1 Dimensional drawings Symbols Min Nom Max A B C D P S E3 R G H J K L M 6.40 5.20 9.40 2.40 6.60 5.35 9.80 2.70 1.27 REF. 0.65 4.00 1.00 0.50 2.30 0.50 0.075 1.20 5.60 6.80 5.50 10.20 3.00 0.50 3.50 0.80 0.40 2.20 0.45 0.00 0.90 5.40 0.80 4.50 1.20 0.60 2.40 0.55 0.15 1.50 5.80 7.2 Package Marking Information and Package Code Part Number TMC1620-TO Date Code Y: last digit of the year WW: week SSS: sequence YWW SSS Figure 7.2 Package marking information Device TMC1620 Package TO-252-4L package 6.5x10 www.trinamic.com Temperature range -55° to +150°C Code/ Marking TMC1620-TO TMC1620-TO DATASHEET (Rev. 1.01 / 2014-MAY-12) 11 8 Disclaimer TRINAMIC Motion Control GmbH & Co. KG does not authorize or warrant any of its products for use in life support systems, without the specific written consent of TRINAMIC Motion Control GmbH & Co. KG. Life support systems are equipment intended to support or sustain life, and whose failure to perform, when properly used in accordance with instructions provided, can be reasonably expected to result in personal injury or death. Information given in this data sheet is believed to be accurate and reliable. However no responsibility is assumed for the consequences of its use nor for any infringement of patents or other rights of third parties which may result from its use. Specifications are subject to change without notice. All trademarks used are property of their respective owners. 9 ESD Sensitive Device The TMC1620-TO is an ESD sensitive CMOS device sensitive to electrostatic discharge. Take special care to use adequate grounding of personnel and machines in manual handling. After soldering the devices to the board, ESD requirements are more relaxed. Failure to do so can result in defect or decreased reliability. www.trinamic.com TMC1620-TO DATASHEET (Rev. 1.01 / 2014-MAY-12) 12 10 Table of Figures Figure Figure Figure Figure Figure Figure Figure Figure Figure Figure Figure Figure Figure Figure Figure Figure Figure Figure Figure Figure Figure Figure Figure Figure Figure Figure Figure 1.1 TMC1620 pin assignments .............................................................................................................................. 3 5.1 Typical output characteristics ........................................................................................................................ 6 5.2 Typical output characteristics ........................................................................................................................ 6 5.3 On-resistance v.s. gate voltage ..................................................................................................................... 6 5.4 Normalized on-resistance v.s. junction temperature ............................................................................. 6 5.5 Forward characteristic of reverse diode .................................................................................................... 6 5.6 Gate threshold voltage v.s. junction temperature .................................................................................. 6 5.7 Gate charge characteristics ............................................................................................................................ 7 5.8 Typical capacitance characteristics ............................................................................................................... 7 5.9 Maximum safe operating area ...................................................................................................................... 7 5.10 Effective transient thermal impedance .................................................................................................... 7 5.11 Switching time waveform ........................................................................................................................... 7 5.12 Gate charge waveform .................................................................................................................................. 7 6.1 Typical output characteristics ........................................................................................................................ 8 6.2 Typical output characteristics ........................................................................................................................ 8 6.3 On-resistance v.s. gate voltage ..................................................................................................................... 8 6.4 Normalized on-resistance v.s. junction temperature ............................................................................. 8 6.5 Forward characteristic of reverse diode .................................................................................................... 8 6.6 Gate Threshold voltage v.s. junction temperature ................................................................................. 8 6.7 Gate charge characteristics ............................................................................................................................ 9 6.8 Typical capacitance characteristics ............................................................................................................... 9 6.9 Maximum safe operating area ...................................................................................................................... 9 6.10 Effective transient thermal impedance .................................................................................................... 9 6.11 Switching time waveform ........................................................................................................................... 9 6.12 Gate charge waveform .................................................................................................................................. 9 7.1 Dimensional drawings .................................................................................................................................. 10 7.2 Package marking information ..................................................................................................................... 10 11 Revision History Version Date Author Description SD – Sonja Dwersteg 0.90 1.00 1.01 2014-FEB-26 2014-MAR-18 2014-MAY-12 www.trinamic.com SD SD SD Initial version New front picture, thermal data corrected RMS motor current in combination with TMC262 and TMC389 updated.