TMGN10008SI

TMGN10008SI N-Channel Enhancement Mosfet General Description General Features • Low RDS(ON) • RoHS and Halogen-Free Compliant VDS=100V I D =8.0A RDS(ON) =100 mW(typ.) @ VGS= 10V Applications • Load switch • PWM 100% UIS Tested 100% Rg Tested SI:SOT-89-3L D D G G D S Marking: 8N10 Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ Rating Units Drain-Source Voltage 100 V Gate-Source Voltage ±20 V Continuous Drain Current, VGS @ 10V1 8 A Continuous Drain Current, VGS @ 10V1 3.2 A Current2 12 A Dissipation3 2 W Pulsed Drain Total Power TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Typ. Max. Unit RθJA Thermal Resistance Junction-ambient 1 --- 125 ℃/W RθJC Thermal Resistance Junction-Case1 --- 80 ℃/W 1/5 TMGN10008SI N-Channel Enhancement Mosfet Electrical Characteristics TC=25℃ unless otherwise specified Symbol Parameter Test Condition Min. Typ. Max. Units Off Characteristic V(BR)DSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250μA 100 110 - V IDSS Zero Gate Voltage Drain Current VDS = 100V, VGS = 0V - - 1 μA IGSS Gate to Body Leakage Current VDS = 0V, VGS = ±20V - - ±100 nA 1.0 2.0 3.0 V - 100 130 mΩ - 206 - pF - 28.9 - pF - 1.4 - pF - 4.3 - nC - 1.5 - nC - 1.1 - nC - 14.7 - ns - 3.5 - ns - 20.9 - ns - 2.7 - ns On Characteristics note3 VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250μA RDS(on) Static Drain-Source On-Resistance note2 VGS = 10V, ID = 3A Dynamic Characteristics note4 Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain(“Miller”) Charge Switching Characteristics VDS = 50V, VGS = 0V, f = 1.0MHz VDS = 50V, ID = 3A, VGS = 10V note4 td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 50V, IDS=3A RG = 2Ω, VGEN = 10V Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain to Source Diode Forward Current note2 - - 8.0 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 12 A - - 1.3 V - 32.1 - ns - 39.4 - nC - 2.1 - A note3 VSD Drain to Source Diode Forward Voltage trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Time Charge Irrm Peak Reverse Recovery Current VGS = 0V, IS =3A VGS = 0V, IF = 3A, di/dt =100A/μs Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤2%. 4. Guaranteed by design, not subject to production 5. VDD=50 V, RG=50 Ω, L=0.3 mH, starting Tj=25 °C 2/5 TMGN10008SI N-Channel Enhancement Mosfet Typical Characteristics 4 4 VGS = 10V VDS= 5V VGS = 4.5V VGS = 3.5V 3 Drain current ID (A) Drain current ID (A) 3 2 VGS = 2.5V 1 2 1 VGS = 2V 0 0 1 2 3 4 0 5 0 Drain−source voltage VDS (V) Figure 1. Output Characteristics 1 2 3 4 Gate−source voltage VGS (V) Figure 2. Transfer Characteristics 2 1200 On-Resistance RDS (on) (mΩ) Source current IS (A) ID= 2A 1.5 1 0.5 0 0.0 0.2 0.4 0.6 0.8 1.0 900 600 300 0 1.2 0 3 Source−drain voltage VSD (V) 500 2.5 400 2.0 300 VGS = 4.5V VGS = 10V 100 0 9 12 15 Figure 4. RDS(ON) vs. VGS Normalized RDS (on) On-Resistance RDS (on) (mΩ) Figure 3. Forward Characteristics of Reverse 200 6 Gate−source voltage VGS (V) 1.5 1.0 0.5 0 0.5 1 1.5 2 Drain current I-IDD(A) (A) Figure 5. RDS(ON) vs. ID 2.5 3 0.0 -50 -25 0 25 50 75 100 Temperature Tj(°C) 125 150 Figure 6. Normalized RDS(on) vs. Temperature 3/5 3 TMGN10008SI N-Channel Enhancement Mosfet 10000 Capacitance（pF） 1000 Ciss 100 Coss 10 Crss F=1.0MHz 1 0 20 40 60 80 100 Drain-source voltage VDS（V） Figure 7. Capacitance Characteristics Figure 8. Gate Charge Characteristics 4/5 Package Mechanical Data:SOT-89-3L 5/5